Wideband bright-soliton frequency-comb generation at optical telecommunication wavelength in a thin silicon nitride film

2018 ◽  
Vol 12 (04) ◽  
pp. 1 ◽  
Author(s):  
Ali Eshaghian Dorche ◽  
Amir Hossein Hosseinnia ◽  
Ali Asghar Eftekhar ◽  
Ali Adibi
1993 ◽  
Vol 318 ◽  
Author(s):  
S.E. Beck ◽  
A.G. Gilicinski ◽  
B.S. Felker ◽  
J.G. Langan ◽  
D.A. Bohling ◽  
...  

ABSTRACTThis study explores the effects of two chemical vapor cleaning chemistries on silicon surfaces. The silicon surfaces are not significantly roughened by exposure to either process. Trace amounts of fluorine are found on the surfaces exposed to 1,1,1,5,5,5-hexafluoro-2,4-pentanedione (HFAC). A thin silicon nitride film forms on the silicon surface as a result of exposure to the HMDS process and is attributed to the H2/N2 plasma treatment used in the first step of the process.


2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Sangsik Kim ◽  
Kyunghun Han ◽  
Cong Wang ◽  
Jose A. Jaramillo-Villegas ◽  
Xiaoxiao Xue ◽  
...  

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.


1994 ◽  
Vol 3 (9) ◽  
pp. 682-689 ◽  
Author(s):  
Chen Jun-fang ◽  
Cheng Shao-yu ◽  
Ren Zhao-xing ◽  
Zhang Su-qing ◽  
Ning Zhao-yuan ◽  
...  

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