An instrumentation amplifier based readout circuit for a dual element microbolometer infrared detector

2014 ◽  
Author(s):  
D. J. de Waal ◽  
J. Schoeman
2018 ◽  
Vol 2018 ◽  
pp. 1-10
Author(s):  
Guo-Ming Sung ◽  
Hsin-Kwang Wang ◽  
Leenendra Chowdary Gunnam

This work presents a one-dimensional magnetic chip composed of a hybrid magnetosensor and a readout circuit, which were fabricated with 0.18 μm 1P6M CMOS technology. The proposed magnetosensor includes a polysilicon cross-shaped Hall plate and two separated metal-oxide semiconductor field-effect transistors (MOSFETs) to sense the magnetic induction perpendicular to the chip surface. The readout circuit, which comprises a current-to-voltage converter, a low-pass filter, and an instrumentation amplifier, is designed to amplify the output Hall voltage with a gain of 43 dB. Furthermore, a SPICE macro model is proposed to predict the sensor’s performance in advance and to ensure sufficient comprehension of the magnetic mechanism of the proposed magnetosensor. Both simulated and measured results verify the correctness and flexibility of the proposed SPICE macro model. Measurements reveal that the maximum output Hall voltage VH, the optimum current-related magnetosensitivity SRI, the optimum voltage-related magnetosensitivity SRV, the averaged nonlinearity error NLE, and the relative bias current Ibias are 4.381 mV, 520.5 V/A·T, 40.04 V/V·T, 7.19%, and 200 μA, respectively, for the proposed 1-D magnetic chip with a readout circuit of 43 dB. The averaged NLE is small at high magnetic inductions of ±30 mT, whereas it is large at low magnetic inductions of ±30 G.


1997 ◽  
Vol 44 (11) ◽  
pp. 1807-1812 ◽  
Author(s):  
V. Umansky ◽  
G. Bunin ◽  
K. Gartsman ◽  
C. Sharman ◽  
R. Almuhannad ◽  
...  

2011 ◽  
Author(s):  
Baisong Ye ◽  
Yonggang Yuan ◽  
Fei Liu ◽  
Xiangyang Li ◽  
Jinglan Sun ◽  
...  

2011 ◽  
Vol 84-85 ◽  
pp. 284-288
Author(s):  
Fei Bao Lu ◽  
Guo Lin Lu ◽  
You Shu Huang ◽  
Xiang Hui Yuan

A 320×240 readout circuit (ROIC) for the uncooled pyroelectric infrared detector was fabricated in the double-poly-double-metal (DPDM) N-well CMOS technology. Composed of X- and Y-shift register, column amplifier and correlated double sampling (CDS) circuit, the readout circuit integrated signal from the detector for frame time. It has the pitch of 50um and power dissipation of less than 50 mW. The circuit configuration, operation and testing result are described. Testing result indicates that the designed circuit meets with the requirement. Thermal images were obtained by the hybrid-integrated sensing array.


2011 ◽  
Author(s):  
Tai-Ping Sun ◽  
Yi-Chuan Lu ◽  
Hsiu-Li Shieh ◽  
Shiuan-Shuo Shiu ◽  
Yi-Ting Liu ◽  
...  

2001 ◽  
Vol 7 (S2) ◽  
pp. 570-571
Author(s):  
P.R. Boyd ◽  
U. Lee ◽  
J. Little ◽  
D. Morton ◽  
A.J. Stoltz ◽  
...  

The ternary II-VT alloy Hg1-xCdxTe has become the material of choice for many infrared detector applications. Current state of the art Hg1-xCdxTe infrared focal plane arrays (IRFPAs) are constructed as hybrid structures consisting of an epitaxial sensing layer of Hg1-xCdxTe on either a CdTe or Cd1-xZnxTe substrate, hybridized to a silicon readout circuit chip. For backside illuminated structures, like the typical infrared Hg1-xCdxTe detector array, multilayer antireflective coatings (AR) are required on the backside of the detector chip. The next generation of higher performance IRFPAs will be based on high densities of smaller detector pixels fabricated on large area monolithic heteroepitaxial substrate materials. Since the ultimate performance of photovoltaic diodes of this type is determined by the signal to noise ratio of the device, reducing the size of the pixels while lowering the undesirable noise currents in the devices also reduces the amount of signal generated by the diode.


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