scholarly journals Formation of 7-nm-wide Line&Spaces in Half Pitch by 3 Dimensional Self-assembly of Nano-dots Using Sphere Type PS-PDMS

2021 ◽  
Vol 3 (6) ◽  
pp. 84-90
Author(s):  
Sumio Hosaka ◽  
Hui Zhang ◽  
You Yin ◽  
Hayato Sone

We have formed nanometer-wide lines & spaces by graphoepitaxy of sphere type polystyrene-poly dimethyl siloxane (PS-PDMS), with a molecular weight (MW) of 14.6 kg/mol., along electron-beam (EB)-drawn resist guide lines. We have 3-dimensionally ordered the sphere type PS-PDMS by controlling a thickness of the PS-PDMS along improved guide lines to form the line and space pattern. We obtained the thickness dependence on the pattern change such as nano-dot arrays and nano-line & space patterns. When the thickness increased to about +4 nm from the upper thickness for formation of the dot arrays, the line & space patterns have been formed with about 7 nm in line width and 14 nm in pitch.

2013 ◽  
Vol 596 ◽  
pp. 73-77
Author(s):  
Sumio Hosaka ◽  
Takashi Akahane ◽  
Miftakhul Huda Huda ◽  
Takuya Komori ◽  
Hui Zhang ◽  
...  

A possibility to fabricate nanodot arrays with a dot size of <10 nm="" and="" a="" dot="" pitch="" of="" 12="" along="" guide="" lines="" has="" been="" studied="" for="" ultrahigh-density="" patterned="" media="" in="" magnetic="" recording="" this="" was="" by="" using="" self-assembling="" block="" copolymers="" polystyrene-poly="" dimethyl="" siloxane="" ps-pdms="" electron="" beam="" eb="" drawing="" with="" hydrogen="" silsesquioxane="" hsq="" negative="" resist="" their="" fusion="" method="" it="" demonstrated="" that="" the="" could="" possibly="" achieve="" 6-nm-sized="" nanodot="" arrays="" 10="" 4="" x="" sup="">2 using self-assembling with PS-PDMS of molecular weight 7000-1500 and EB-drawing for narrow guide lines. These results prove that the fusion method is required for achieving extremely small dot arrays as 5 Tbit/in2magnetic storage devices.Keywords: Nanodot, self-assembly, electron-beam drawing, graphoepitaxy, patterned media, magnetic recording.


1999 ◽  
Vol 584 ◽  
Author(s):  
Masanori Komuro

AbstractIn this paper, electron beam (EB) lithography and direct processes are summarized for application to nanometer-scale electron devices such as single electron transistor. As decreasing line width in lithography, the delineated patterns has fluctuation of line width, which is so-called line-edge-roughness. It is kwon that such a roughness is caused by aggregates of resist molecules. Therefore to avoid the rougphness to make smooth line edge, we have to use rather low molecular weight resist materials. As one of such candidates, EB exposure characteristics of thermally oxidized SiO2 film are described. Although the sensitivity of the resist is about a few C/cm2 which is lower than conventional resists, it is possible to delineate fine line and space pattern with 15 nm pitch and 5 nm width. This technique is extended to make miniature metal/insulator/metal junctions using SiO2/Si bilayer resist system and the following metal liftoff process. Metal layer is directly deposited on SiO2 substrates in WF6 gas ambient simultaneously with EB irradiation. The resistivity of the deposited film is about 6×10/4 Ωcm depending on hydrocarbon contamination of the substrate itself. We can make the deposited lines with line-width of about 10 nm using 3 nm diameter of the incident EB. From current-voltage characteristics for single tunnel junctions with various tunnel resistances, the barrier height is estimated to be about 0.2 eV. This result indicates clearly the junction properties can be controlled at least with the accuracy of minimum deflection increment of the EB system used here. It is successfully observed that single-electron-transistor produced by EB-induced deposition exhibits Coulomb oscillation at temperature of 230 K.


MRS Advances ◽  
2020 ◽  
Vol 5 (64) ◽  
pp. 3507-3520
Author(s):  
Chunhui Dai ◽  
Kriti Agarwal ◽  
Jeong-Hyun Cho

AbstractNanoscale self-assembly, as a technique to transform two-dimensional (2D) planar patterns into three-dimensional (3D) nanoscale architectures, has achieved tremendous success in the past decade. However, an assembly process at nanoscale is easily affected by small unavoidable variations in sample conditions and reaction environment, resulting in a low yield. Recently, in-situ monitored self-assembly based on ion and electron irradiation has stood out as a promising candidate to overcome this limitation. The usage of ion and electron beam allows stress generation and real-time observation simultaneously, which significantly enhances the controllability of self-assembly. This enables the realization of various complex 3D nanostructures with a high yield. The additional dimension of the self-assembled 3D nanostructures opens the possibility to explore novel properties that cannot be demonstrated in 2D planar patterns. Here, we present a rapid review on the recent achievements and challenges in nanoscale self-assembly using electron and ion beam techniques, followed by a discussion of the novel optical properties achieved in the self-assembled 3D nanostructures.


e-Polymers ◽  
2008 ◽  
Vol 8 (1) ◽  
Author(s):  
Dong Chen ◽  
Ruixue Liu ◽  
Zhifeng Fu ◽  
Yan Shi

AbstractAmphiphilic diblock copolymer poly(methyl methacrylate)-b-poly(acrylic acid) (PMMA-b-PAA) was prepared by 1,1-diphenylethene (DPE) method. Firstly, free radical polymerization of methyl methacrylate was carried out with AIBN as initiator in the presence of DPE, giving a DPE-containing PMMA precursor with controlled molecular weight. tert-Butyl acrylate (tBA) was then polymerized in the presence of the PMMA precursor, and PMMA-b-PtBA diblock copolymer with controlled molecular weight was prepared. Finally, amphiphilic diblock copolymer PMMA-b-PAA was obtained by hydrolysis of PMMA-b-PtBA. The formation of PMMA-b-PAA was confirmed by 1H NMR spectrum and gel permeation chromatography. Transmission electron microscopy and dynamic light scattering were used to detect the self-assembly behavior of the amphiphilic diblock polymers in methanol.


2006 ◽  
Vol 12 (S02) ◽  
pp. 1284-1285
Author(s):  
AD Garetto ◽  
R Garcia ◽  
DP Griffis ◽  
PE Russell

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006


2015 ◽  
Author(s):  
HsinYu Tsai ◽  
Hiroyuki Miyazoe ◽  
Joy Cheng ◽  
Markus Brink ◽  
Simon Dawes ◽  
...  

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