High-volume manufacturing device overlay process control

2017 ◽  
Author(s):  
Honggoo Lee ◽  
Sangjun Han ◽  
Jaeson Woo ◽  
DongYoung Lee ◽  
ChangRock Song ◽  
...  
Keyword(s):  
Process Control ◽  
High Volume

How to secure the fabrication of Gallium Nitride on Si wafers

2019 ◽  
Vol 2019 (1) ◽  
pp. 000444-000449
Author(s):  
D. Alliata ◽  
N. Anderson ◽  
M. Durand de Gevigney ◽  
I. Bergoend ◽  
P. Gastaldo
Keyword(s):  
Gallium Nitride ◽  
Phase Shift ◽  
Process Control ◽  
Silicon Substrate ◽  
High Volume ◽  
Fabrication Process ◽  
Control Solution ◽  
Total Control ◽  
Before And After ◽  
Infrared Interferometry

Abstract Process control solutions to secure the High-Volume Manufacturing of Gallium Nitride (GaN) devices for power applications are a must today. Unity recently developed and introduced on the market a total control solution that address both defectivity and metrology needs of GaN industry. Proprietary technologies like Phase Shift Deflectometry, darkfield inspection, confocal chromatic imaging and infrared interferometry are here explored to detect killer defects potentially affecting the gallium nitride wafer. More in detail, we characterized Gallium nitride on Silicon substrate before and after the fabrication of the final device and demonstrated how the fabrication process can be optimized.

Enabling Requirements for High Volume Thermo compression Bonding

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 000995-001015
Author(s):  
Tom Strothmann
Keyword(s):  
Process Control ◽  
Cost Reduction ◽  
State Of The Art ◽  
High Volume ◽  
Manufacturing Technology ◽  
Data Logging ◽  
Key Factors ◽  
Review State ◽  
Memory Applications

The potential of Thermo compression Bonding (TCB) has been widely discussed for several years, but it has not previously achieved widespread production use. TCB has now begun the transition to an accepted high volume manufacturing technology driven primarily by the memory market, but with wider adoption close for non-memory applications. Several key factors have enabled this transition, including advanced TCB equipment with higher UPH for cost reduction and advanced methods of inline process control. The unique requirements of TCB demand absolute process control, simultaneous data logging capability for multiple key factors in the process and portability of the process between tools. This introduces a level of sophistication that has not previously been required for BE assembly processes. This presentation will review state of the art TCB technology and the fundamental equipment requirements to support the transition to HVM.

Automated Metrology Improves Productivity and Yields for Wafer Level Packaging in High Volume Manufacturing

2014 ◽  
Vol 2014 (1) ◽  
pp. 000155-000160
Author(s):  
Jin You Zao ◽  
Bong Yin Yen ◽  
Lim Beng Kuan ◽  
John Thornell ◽  
Darcy Hart ◽  
...  
Keyword(s):  
Process Control ◽  
High Volume ◽  
Critical Dimension ◽  
Thickness Measurement ◽  
Electrical Performance ◽  
Wafer Level ◽  
Chip Scale Package ◽  
Under Sampling ◽  
Line Process ◽  
Increasing Demand

Wafer Bumping In-line Process control of Wafer-Level Chip Scale Package (WLCSP) requires accurate measurement of bump features during processing. These bump features include critical dimension of Redistribution Layer (RDL), Under Bump Metal (UBM) and transparent polyimide thickness. For a 4-Mask Layer Cu plated WLCSP, accurate feature thickness measurement is required for both the Redistribution Layer (RDL) and Under Bump Metal (UBM) to ensure consistent delivery of good electrical performance and package reliability. This is especially important as WLCSP is moving towards finer feature size and pitch to meet increasing demand for smaller form factor. This paper reports the development of an automated Critical Dimension (CD) measurement solution capable of measuring features at pre-defined locations on different topology both under sampling and full inspection mode on wafer. The solution is fully scalable to meet the requirement of high product-mix HVM environment, by highly adaptive to different features on different products for which measurement needs to be automated for effective process control.

Addressing Dynamic Process Changes in High Volume Plasma Etch Manufacturing by Using Multivariate Process Control

2010 ◽  
Vol 23 (2) ◽  
pp. 185-193 ◽  
Author(s):  
Blake R. Parkinson ◽  
Hyung Lee ◽  
Merritt Funk ◽  
Daniel Prager ◽  
Asao Yamashita ◽  
...  
Keyword(s):  
Process Control ◽  
Dynamic Process ◽  
High Volume ◽  
Plasma Etch ◽  
Multivariate Process ◽  
Multivariate Process Control

Inspection and Metrology Solutions from TSV through Reveal for High Volume Manufacturing

2013 ◽  
Vol 2013 (1) ◽  
pp. 000558-000563 ◽  
Author(s):  
Russ Dudley ◽  
David Marx ◽  
Rajiv Roy ◽  
David Grant ◽  
Matt Wilson ◽  
...  
Keyword(s):  
Process Control ◽  
Cost Effective ◽  
High Volume ◽  
Solution Set ◽  
Inspection System ◽  
3D Measurement ◽  
Specific Solution ◽  
Cu Pillar ◽  
Small Pitch ◽  
2D And 3D

As the industry is investigating more cost-effective and reliable Cu Pillar Bumping as well as TSV, a key enabler is process control through inspection and metrology. In working with the industry, Rudolph has developed a suite of solutions that incorporate inspection, metrology and software enabling rapid yield ramp. The solution set applies to via etch, CMP, RDL, micro-bumping and all the way to Chip on Wafer mount and post-saw. As an example, within the TSV process a challenging inspection is that of detecting defects after CMP and nail reveal. The bonded wafers are warped, there are no alignment fiducials and the resolution requirement is high. Rudolph has developed a specific solution designed to address the nail reveal defectivity issue as well as metrology sensors to measure the nail height. Micro Pillar bumps and C4 bumps are the main bump geometries used in 3D packages as their small pitch and size allow the required number of I/Os. Rudolph will discuss an inspection system that incorporates multiple metrology sensors to provide complete 2D and 3D measurement and inspection solutions.

Automated process control optimization to control low volume products based on high volume products data

2005 ◽  
Author(s):  
Tatiana Levin ◽  
Issi Geier ◽  
Alex Zhivotovsky ◽  
Nilufar Aframiam ◽  
Hamutal Friedlander-Klar
Keyword(s):  
Process Control ◽  
High Volume ◽  
Control Optimization ◽  
Low Volume ◽  
Automated Process

Morphology, Distribution and Identification of Micro-Constituents Along Grain Boundaries in Nickel-Base Alloys

1973 ◽  
Vol 31 ◽  
pp. 176-177
Author(s):  
D. E. Fornwalt ◽  
A. R. Geary ◽  
B. H. Kear
Keyword(s):  
Electron Microscope ◽  
Grain Boundaries ◽  
Volume Fraction ◽  
Rupture Life ◽  
Stress Rupture ◽  
High Volume ◽  
Precipitate Morphology ◽  
Stress Rupture Life ◽  
Nickel Base ◽  
Scanning Electron

A systematic study has been made of the effects of various heat treatments on the microstructures of several experimental high volume fraction γ’ precipitation hardened nickel-base alloys, after doping with ∼2 w/o Hf so as to improve the stress rupture life and ductility. The most significant microstructural chan§e brought about by prolonged aging at temperatures in the range 1600°-1900°F was the decoration of grain boundaries with precipitate particles.Precipitation along the grain boundaries was first detected by optical microscopy, but it was necessary to use the scanning electron microscope to reveal the details of the precipitate morphology. Figure 1(a) shows the grain boundary precipitates in relief, after partial dissolution of the surrounding γ + γ’ matrix.

A Comparison of Tem and Apfim to the Interpretation of Modulated Microstructures

1985 ◽  
Vol 43 ◽  
pp. 70-71
Author(s):  
M.G. Burke ◽  
M.K. Miller
Keyword(s):  
Low Temperature ◽  
Microstructural Characterization ◽  
Superlattice Reflection ◽  
High Volume ◽  
Atom Probe ◽  
Dark Field ◽  
Miscibility Gap ◽  
Second Phase ◽  
Two Phase ◽  
Probe Field

Interpretation of fine-scale microstructures containing high volume fractions of second phase is complex. In particular, microstructures developed through decomposition within low temperature miscibility gaps may be extremely fine. This paper compares the morphological interpretations of such complex microstructures by the high-resolution techniques of TEM and atom probe field-ion microscopy (APFIM).The Fe-25 at% Be alloy selected for this study was aged within the low temperature miscibility gap to form a <100> aligned two-phase microstructure. This triaxially modulated microstructure is composed of an Fe-rich ferrite phase and a B2-ordered Be-enriched phase. The microstructural characterization through conventional bright-field TEM is inadequate because of the many contributions to image contrast. The ordering reaction which accompanies spinodal decomposition in this alloy permits simplification of the image by the use of the centered dark field technique to image just one phase. A CDF image formed with a B2 superlattice reflection is shown in fig. 1. In this CDF micrograph, the the B2-ordered Be-enriched phase appears as bright regions in the darkly-imaging ferrite. By examining the specimen in a [001] orientation, the <100> nature of the modulations is evident.

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