How to secure the fabrication of Gallium Nitride on Si wafers
2019 ◽
Vol 2019
(1)
◽
pp. 000444-000449
Keyword(s):
Abstract Process control solutions to secure the High-Volume Manufacturing of Gallium Nitride (GaN) devices for power applications are a must today. Unity recently developed and introduced on the market a total control solution that address both defectivity and metrology needs of GaN industry. Proprietary technologies like Phase Shift Deflectometry, darkfield inspection, confocal chromatic imaging and infrared interferometry are here explored to detect killer defects potentially affecting the gallium nitride wafer. More in detail, we characterized Gallium nitride on Silicon substrate before and after the fabrication of the final device and demonstrated how the fabrication process can be optimized.
2017 ◽
Vol 2017
(1)
◽
pp. 000087-000092
Keyword(s):
2016 ◽
Vol 2016
(1)
◽
pp. 000032-000037
◽
2022 ◽
pp. ijgc-2021-002812
2018 ◽
Vol 28
(4)
◽
pp. 1671-1671
Keyword(s):
2017 ◽
1989 ◽
Vol 257
(4)
◽
pp. R796-R803
◽
2015 ◽
Vol 2015
(DPC)
◽
pp. 000995-001015
Keyword(s):
2014 ◽
Vol 2014
(1)
◽
pp. 000155-000160