Inspection and Metrology Solutions from TSV through Reveal for High Volume Manufacturing

2013 ◽  
Vol 2013 (1) ◽  
pp. 000558-000563 ◽  
Author(s):  
Russ Dudley ◽  
David Marx ◽  
Rajiv Roy ◽  
David Grant ◽  
Matt Wilson ◽  
...  
Keyword(s):  
Process Control ◽  
Cost Effective ◽  
High Volume ◽  
Solution Set ◽  
Inspection System ◽  
3D Measurement ◽  
Specific Solution ◽  
Cu Pillar ◽  
Small Pitch ◽  
2D And 3D

As the industry is investigating more cost-effective and reliable Cu Pillar Bumping as well as TSV, a key enabler is process control through inspection and metrology. In working with the industry, Rudolph has developed a suite of solutions that incorporate inspection, metrology and software enabling rapid yield ramp. The solution set applies to via etch, CMP, RDL, micro-bumping and all the way to Chip on Wafer mount and post-saw. As an example, within the TSV process a challenging inspection is that of detecting defects after CMP and nail reveal. The bonded wafers are warped, there are no alignment fiducials and the resolution requirement is high. Rudolph has developed a specific solution designed to address the nail reveal defectivity issue as well as metrology sensors to measure the nail height. Micro Pillar bumps and C4 bumps are the main bump geometries used in 3D packages as their small pitch and size allow the required number of I/Os. Rudolph will discuss an inspection system that incorporates multiple metrology sensors to provide complete 2D and 3D measurement and inspection solutions.

Solution for HVM TSV Etch Process

2012 ◽  
Vol 2012 (1) ◽  
pp. 000844-000847
Author(s):  
Rajiv Roy ◽  
Matt Wilson
Keyword(s):  
Process Control ◽  
Cost Effective ◽  
Solution Set ◽  
Specific Solution ◽  
The Way

As the industry is getting their hands around processes critical to cost-effective and reliable TSV manufacturing a key enabler is process control through inspection and metrology. In working with the industry, Rudolph has developed a suite of solutions that incorporate inspection, metrology and software enabling rapid yield ramp. The solution set apply all the way from via etch to CMP, RLD, micro-bumping and all the way to Chip on Wafer mount and post-saw. Within the TSV process a challenging inspection is that of detecting defects after CMP and nail reveal. The bonded wafers are warped, there are no alignment fiducials and the resolution requirement is high. Rudolph has developed a specific solution designed to address the nail reveal defectivity issue.

Challenges in 3D Inspection of Micro Bumps Used in 3D Packaging

2012 ◽  
Vol 2012 (1) ◽  
pp. 000542-000547 ◽  
Author(s):  
Reza Asgari
Keyword(s):  
Power Consumption ◽  
Wafer Bonding ◽  
Field Programmable Gate Array ◽  
Laser Triangulation ◽  
3D Measurement ◽  
Lower Power ◽  
Small Pitch ◽  
Field Programmable ◽  
3D Packaging ◽  
2D And 3D

2.5D/3D devices are the next major packaging technologies, driven by the need for more functionality, lower power consumption and smaller footprint. Many device manufacturers are devoting capital to develop their own processes and some are already shipping devices such as FPGA (Field Programmable Gate Array) on interposers. 3D packages often require hundreds of thousands of I/O per die. Micro Pillar bumps and C4 bumps are the main bump geometries used in 3D packages as their small pitch and size allow the required number of I/Os. Inspecting these bumps throughout the process is critical because failure after chip to chip or chip to wafer bonding is very costly. This paper describes the use of a camera and laser triangulation to provide complete 2D and 3D measurement and inspection capability.

Cost-effective, high-volume molecular beam epitaxy using a multi 6-in wafer reactor

2001 ◽  
Vol 227-228 ◽  
pp. 143-149
Author(s):  
Larry Leung ◽  
Damian Davison ◽  
Arthur Cornfeld ◽  
Frederick Towner ◽  
Dave Hartzell
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cost Effective ◽  
High Volume

High-volume manufacturing device overlay process control

2017 ◽  
Author(s):  
Honggoo Lee ◽  
Sangjun Han ◽  
Jaeson Woo ◽  
DongYoung Lee ◽  
ChangRock Song ◽  
...  
Keyword(s):  
Process Control ◽  
High Volume

scholarly journals Improvement of the Impact Properties of Composite Laminates by Means of Nano-Modification of the Matrix—A Review

2018 ◽  
Vol 8 (12) ◽  
pp. 2406 ◽  
Author(s):  
Hamed Saghafi ◽  
Mohamad Fotouhi ◽  
Giangiacomo Minak
Keyword(s):  
Composite Laminates ◽  
Cost Effective ◽  
Careful Consideration ◽  
Impact Performance ◽  
Compression After Impact ◽  
The Matrix ◽  
The Right ◽  
2D And 3D ◽  
The Impact ◽  
Selection Of

This paper reviews recent works on the application of nanofibers and nanoparticle reinforcements to enhance the interlaminar fracture toughness, to reduce the impact induced damage and to improve the compression after impact performance of fiber reinforced composites with brittle thermosetting resins. The nanofibers have been mainly used as mats embedded between plies of laminated composites, whereas the nanoparticles have been used in 0D, 1D, 2D, and 3D dimensional patterns to reinforce the matrix and consequently the composite. The reinforcement mechanisms are presented, and a comparison is done between the different papers in the literature. This review shows that in order to have an efficient reinforcement effect, careful consideration is required in the manufacturing, materials selection and reinforcement content and percentage. The selection of the right parameters can provide a tough and impact resistant composite with cost effective reinforcements.

How to secure the fabrication of Gallium Nitride on Si wafers

2019 ◽  
Vol 2019 (1) ◽  
pp. 000444-000449
Author(s):  
D. Alliata ◽  
N. Anderson ◽  
M. Durand de Gevigney ◽  
I. Bergoend ◽  
P. Gastaldo
Keyword(s):  
Gallium Nitride ◽  
Phase Shift ◽  
Process Control ◽  
Silicon Substrate ◽  
High Volume ◽  
Fabrication Process ◽  
Control Solution ◽  
Total Control ◽  
Before And After ◽  
Infrared Interferometry

Abstract Process control solutions to secure the High-Volume Manufacturing of Gallium Nitride (GaN) devices for power applications are a must today. Unity recently developed and introduced on the market a total control solution that address both defectivity and metrology needs of GaN industry. Proprietary technologies like Phase Shift Deflectometry, darkfield inspection, confocal chromatic imaging and infrared interferometry are here explored to detect killer defects potentially affecting the gallium nitride wafer. More in detail, we characterized Gallium nitride on Silicon substrate before and after the fabrication of the final device and demonstrated how the fabrication process can be optimized.

Integration of Electrografted Layers for the Metallization of Deep TSVs

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 000803-000830
Author(s):  
Claudio Truzzi ◽  
F. Raynal ◽  
V. Mevellec ◽  
N. Frederich ◽  
D. Suhr ◽  
...  
Keyword(s):  
Cost Effective ◽  
High Volume ◽  
Molecular Engineering ◽  
Test Method ◽  
Film Properties ◽  
Wet Process ◽  
Integration Schemes ◽  
Chemical Grafting ◽  
3D Packaging ◽  
Conductive Surfaces

Electrografting (eG) is a molecular engineering technology delivering high-quality films for Through Silicon Vias (TSVs). It generates surface-initiated conformal films which are thin, continuous, adherent and uniform. It is a wet-process technique, operated in standard plating tools, and is used on (semi)-conductive surfaces. Chemical grafting (cG) is a similar technology, used to graft films on non-conductive surfaces. A wet deposition of insulator, barrier and copper seed layers inside deep TSVs using a combination of electrografting and chemical grafting techniques has already been demonstrated [1, 2]. Electrografting and chemical grafting formulations and processes have been developed and specifically tailored for TSV diameters ranging from 1 to 200 μm, covering a depth/diameter Aspect Ratio (AR) range from 2:1 to 20:1. Film thickness can be controlled to any value from 50nm to few microns, depending on the layer, with 5% 3ó in-wafer non-uniformity, providing a step coverage (bottom/top thickness ratio) value of up to 90%. Adhesion of all layers is measured using a 16-square scribe tape test method: all layers successfully pass the test. The presentation will focus on film properties and show how TSV formed using these layers meet all key process requirements such as conformality, uniformity, adhesion, reliability and industrial compatibility for cost-effective high volume manufacturing of TSV wafers. A comprehensive set of film properties and reliability data characterized on blanket and pattern 200-mm Si wafers will be discussed. Integration schemes of electrografted layers within current 3D packaging process flows will be presented.

Sign in / Sign up

Export Citation Format

Share Document