Development of sealed tube cross strip readout UV detectors

2021 ◽  
Author(s):  
Oswald H. W. Siegmund
Keyword(s):  
Uv Detectors

Analysis of nonsteroidal anti-inflammatory drugs by using microfluidic techniques: a review

2020 ◽  
Vol 16 ◽  
Author(s):  
Chiara Fanali ◽  
Giovanni D’Orazio ◽  
Alessandra Gentili ◽  
Salvatore Fanali
Keyword(s):  
Stationary Phases ◽  
Low Flow ◽  
High Mass ◽  
Internal Diameter ◽  
Uv Detectors ◽  
On Line ◽  
Inflammatory Drugs ◽  
Anti Inflammatory ◽  
Silica Phases ◽  
Liquid Chromatographic

: In this review paper, miniaturized techniques, including both electromigration and liquid chromatographic ones, have been considered discussing their main features in the analytical field for the separation and analysis of nonsteroidal anti-inflammatory drugs (NSAIDs). In capillary electrophoresis (CE) and nano-liquid chromatography (nano-LC), separation are performed in capillaries with internal diameter (I.D.) lower than 100 m and therefore flow rates in the range 100- 1000 nL/min are applied. Therefore due to the low flow rate, high mass sensitivity can be obtained. Usually conventional UV detectors are used on-line; however these techniques can be coupled with mass spectrometry (MS). CE and nano-LC have been also applied to the separation of NSAIDs using silica stationary phases (SP) modified with C18 promoting interaction with analytes mainly based on hydrophobic interaction. In addition the use of chiral SP resulted effective for the chiral resolution of these compounds. In addition to silica phases, monolithic (both organic and inorganic) material has also been used. Although most of the presented studies aimed to demonstrate the usefulness of the considered microfluidic techniques, some applications to real samples have also been reported.

scholarly journals GaN MSM UV Detectors with Different Electrode Materials

2021 ◽  
pp. 1-1
Author(s):  
Yangjie An ◽  
Jun Liao ◽  
Cheng Wu ◽  
Rui Zhang ◽  
Yong Li ◽  
...  
Keyword(s):  
Electrode Materials ◽  
Uv Detectors

A Novel Technique for Growth of Lithium-free ZnO Single Crystals

2013 ◽  
Vol 1538 ◽  
pp. 405-410
Author(s):  
Shaoping Wang ◽  
Aneta Kopec ◽  
Andrew G. Timmerman
Keyword(s):  
Single Crystal ◽  
The Novel ◽  
Uv Laser ◽  
Uv Detectors ◽  
Growth Technique ◽  
Light Emitting ◽  
Alkaline Metals ◽  
Novel Technique ◽  
Solar Blind ◽  
Zno Single Crystal

ABSTRACTA ZnO single crystal is a native substrate for epitaxial growth of high-quality thin films of ZnO-based Group II-oxides (e.g. ZnO, ZnMgO, ZnCdO) for variety of devices, such as UV and visible-light emitting diodes (LEDs), UV laser diodes and solar-blind UV detectors. Currently, commercially available ZnO single crystal wafers are produced using a hydrothermal technique. The main drawback of hydrothermal growth technique is that the ZnO crystals contain large amounts of alkaline metals, such as Li and K. These alkaline metals are electrically active and hence can be detrimental to device performances. In this paper, results from a recently developed novel growth technique for ZnO single crystal boules are presented. Lithium-free ZnO single crystal boules of up to 1 inch in diameter was demonstrated using the novel technique. Results from crystal growth and materials characterization will be discussed.

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

scholarly journals An Optical Fiber Sensor Based on La2O2S:Eu Scintillator for Detecting Ultraviolet Radiation in Real-Time

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3754 ◽  
Author(s):  
Yongji Yan ◽  
Xu Zhang ◽  
Haopeng Li ◽  
Yu Ma ◽  
Tianci Xie ◽  
...  
Keyword(s):  
Optical Fiber ◽  
Response Time ◽  
Electromagnetic Interference ◽  
Uv Light ◽  
Optical Fiber Sensor ◽  
Temperature Response ◽  
Superior Performance ◽  
Fiber Sensor ◽  
Uv Detectors

A novel ultraviolet (UV) optical fiber sensor (UVOFS) based on the scintillating material La2O2S:Eu has been designed, tested, and its performance compared with other scintillating materials and other conventional UV detectors. The UVOFS is based on PMMA (polymethyl methacrylate) optical fiber which includes a scintillating material. Scintillating materials provide a unique opportunity to measure UV light intensity even in the presence of strong electromagnetic interference. Five scintillating materials were compared in order to select the most appropriate one for the UVOFS. The characteristics of the sensor are reported, including a highly linear response to radiation intensity, reproducibility, temperature response, and response time (to pulsed light) based on emission from a UV source (UV fluorescence tube) centered on a wavelength of 308 nm. A direct comparison with the commercially available semiconductor-based UV sensor proves the UVOFS of this investigation shows superior performance in terms of accuracy, long-term reliability, response time and linearity.

Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation

2003 ◽  
Vol 798 ◽  
Author(s):  
Atsushi Motogaito ◽  
Kazumasa Hiramatsu ◽  
Yasuhiro Shibata ◽  
Hironobu Watanabe ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Wavelength Range ◽  
Epitaxial Layer ◽  
Device Performance ◽  
Uv Detectors ◽  
X Ray ◽  
High Responsivity ◽  
Vacuum Uv

ABSTRACTCharacterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivity achieved about 0.05 A/W at 95 eV (13 nm). Thus, their device performance is shown between 3.4 and 100 eV (10 and 360 nm). Furthermore, the high responsivity spectra were realized by using AlGaN Schottky UV detectors consisting of Al0.5Ga0.5N on AlN epitaxial layer.

Selective 4H-SiC UV Detectors

2013 ◽  
Vol 740-742 ◽  
pp. 1014-1017
Author(s):  
Evgenia V. Kalinina ◽  
O. Konstantinov ◽  
A.A. Lebedev ◽  
Yu. Gol’dberg
Keyword(s):  
Quantum Efficiency ◽  
Uv Radiation ◽  
Wavelength Range ◽  
Optical Transition ◽  
Human Beings ◽  
Radiation Level ◽  
Uv Detectors ◽  
Uv Photodetectors ◽  
Oncological Diseases ◽  
Direct Optical Transition

Carcinogenic (bactericidal) radiation (λ = 200–300 nm with a peak at 254 nm) is present in natural (Sun) and artificial (lamps) source of UV radiation. Its intensity is very low as compared to other types of radiation, but it strongly affects the health of human beings. To prevent oncological diseases, it is important to monitor the carcinogenic radiation level; i.e., selective photodetectors are required. A UV photodetectors based on n-4H-SiC Schottly barriers and p+-n junctions are proposed. The quantum efficiency spectrum of such detectors is very close to the spectrum of relative action of carcinogenic radiation on human beings due to the direct optical transition at 4.9 eV in 4H-SiC. The quantum efficiency (at the spectral peak 254 nm) amounts to about 0.3 electrons/photon for virtually zero sensitivity in other spectral regions. Quantum efficiency in the wavelength range 247–254 nm is practically independent of temperature in the range from −100 to +300°C.

Sign in / Sign up

Export Citation Format

Share Document