Modelling effects of GaN HEMTs terahertz detectors with spiral antennas

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

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Advanced design of AlGaN/GaN HEMTs employing mesa field plate for high breakdown voltage

9th International Seminar on Power Semiconductors (ISPS 2008) ◽

10.1049/ic:20080190 ◽

2008 ◽

Author(s):

Kyu-Heon Cho ◽

Young-Hwan Choi ◽

Jiyong Lim ◽

Young-Shil Kim ◽

Min-Koo Han

Keyword(s):

Breakdown Voltage ◽

Field Plate ◽

High Breakdown Voltage ◽

Gan Hemts

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Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9260944 ◽

2020 ◽

Author(s):

Yi-Cheng Chen ◽

Shun-Wei Tang ◽

Pin-Hau Lin ◽

Zheng-Chen Chen ◽

Ming-Hao Lu ◽

...

Keyword(s):

Silicon Nitride ◽

Threshold Voltage ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Gan Hemts

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Microwave Performance of Ferroelectric-Gated GaN HEMTs

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) ◽

10.1109/bcicts48439.2020.9392955 ◽

2020 ◽

Author(s):

Chunlei Wu ◽

Jeffrey Smith ◽

Suman Datta ◽

Yu Cao ◽

Jinqiao Xie ◽

...

Keyword(s):

Gan Hemts

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Recent Progress in the Development of Graphene Detector for Terahertz Detection

Sensors ◽

10.3390/s21154987 ◽

2021 ◽

Vol 21 (15) ◽

pp. 4987

Author(s):

Jianlong Liu ◽

Xin Li ◽

Ruirui Jiang ◽

Kaiqiang Yang ◽

Jing Zhao ◽

...

Keyword(s):

Recent Progress ◽

Photovoltaic Effect ◽

Dimensional Structure ◽

High Electron ◽

Terahertz Waves ◽

Terahertz Detectors ◽

Basic Part ◽

Suitable Material ◽

Terahertz Region ◽

Frequency Independent

Terahertz waves are expected to be used in next-generation communications, detection, and other fields due to their unique characteristics. As a basic part of the terahertz application system, the terahertz detector plays a key role in terahertz technology. Due to the two-dimensional structure, graphene has unique characteristics features, such as exceptionally high electron mobility, zero band-gap, and frequency-independent spectral absorption, particularly in the terahertz region, making it a suitable material for terahertz detectors. In this review, the recent progress of graphene terahertz detectors related to photovoltaic effect (PV), photothermoelectric effect (PTE), bolometric effect, and plasma wave resonance are introduced and discussed.

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