Effects of annealing temperature on the performance of the Schottky diode fabricated with TiO 2 sol-gel

2009 ◽  
Author(s):  
Y. Chen ◽  
K. H. Yoo ◽  
K. S. Kang ◽  
Jaehwan Kim
2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.


2014 ◽  
Vol 40 (2) ◽  
pp. 2885-2890 ◽  
Author(s):  
E. Salahinejad ◽  
M.J. Hadianfard ◽  
D. Vashaee ◽  
L. Tayebi

2013 ◽  
Vol 756 ◽  
pp. 91-98 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah

Terbium –substituted yttrium iron garnet (Tb1.5Y1.5Fe5O12) films nanoparticles were successfully prepared by a sol-gel method. The films were deposited on the quartz substrate using spin coating technique. To study effect of annealing temperature, the annealing process was executed at 700, 800 and 900 °C in air for 2 hours. The X-ray diffraction (XRD) proved that the pure phase of garnet structure was detected for the film annealed at 900 °C. The lattice parameter increased with the increment of annealing temperature and the highest value of 12.35 Å was obtained at 900 °C. Field Emission Scanning Electron Microscope (FE-SEM) results showed that the particle size increased from 43nm to 56nm as annealing temperature increased from 700 to 900°C. The film’s thickness also affected by increasing of annealing temperature and become thin at 900 °C due to densification process occurred at high annealing temperature. The elemental compositions of the Tb1.5Y1.5Fe5O12 film were detected using an Energy Dispersive X-raySpectroscopy (EDX). Magnetic properties at room temperature were measured using a Vibrating Sample Magnetometer (VSM).The saturation magnetization Ms increased with the annealingtemperature and showed a high value of 104emu/cm3, but the coercivity Hc of the film was decreased due to the increment of the particle size. Normal 0 21 false false false MS X-NONE X-NONE MicrosoftInternetExplorer4 Terbium –substituted yttrium iron garnet (Tb1.5Y1.5Fe5O12) films nanoparticles were successfully prepared by a sol-gel method. The films were deposited on the quartz substrate using spin coating technique. To study effect of annealing temperature, the annealing process was executed at 700, 800 and 900°C in air for 2 hours. The X-ray diffraction (XRD) proved that the pure phase of garnet structure was detected for the film annealed at 900 °C. The lattice parameter increased with the increment of annealing temperature and the highest value of 12.35 Å was obtained at 900 °C. Field Emission Scanning Electron Microscope (FE-SEM) results showed that the particle size increased from 43nm to 56nm as annealing temperature increased from 700 to 900 °C. The film’s thickness also affected by increasing of annealing temperature and become thin at 900 °C due to densification process occurred at high annealing temperature. The elemental compositions of the Tb1.5Y1.5Fe5O12 film were detected using an Energy Dispersive X-ray Spectroscopy (EDX). Magnetic properties at room temperature were measured using a Vibrating Sample Magnetometer (VSM).The saturation magnetization Ms increased with the annealing temperature and showed a high value of 104emu/cm3, but the coercivity Hc of the film was decreased due to the increment of the particle size. st1\:*{behavior:url(#ieooui) } /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-qformat:yes; mso-style-parent:""; mso-padding-alt:0cm 5.4pt 0cm 5.4pt; mso-para-margin:0cm; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:11.0pt; font-family:"Calibri","sans-serif"; mso-ascii-font-family:Calibri; mso-ascii-theme-font:minor-latin; mso-fareast-font-family:"Times New Roman"; mso-fareast-theme-font:minor-fareast; mso-hansi-font-family:Calibri; mso-hansi-theme-font:minor-latin; mso-bidi-font-family:"Times New Roman"; mso-bidi-theme-font:minor-bidi;}


2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.


2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.


1999 ◽  
Vol 606 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
R. S. Katiyar ◽  
A. L. M. Cruz ◽  
...  

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.


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