Influence of the deposition conditions on the elastic properties of chemical vapor deposited (CVD) diamond films studied by laser ultrasonics

1999 ◽  
Vol 105 (2) ◽  
pp. 1229-1229
Author(s):  
Kris Van de Rostyne ◽  
Christ Glorieux ◽  
Weimin Gao ◽  
Walter Lauriks ◽  
Jan Thoen ◽  
...  
1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.


1993 ◽  
Vol 302 ◽  
Author(s):  
S. Zhao ◽  
K.K. Gan ◽  
H. Kagan ◽  
R. Kass ◽  
R. Malchow ◽  
...  

ABSTRACTThe electrical properties associated with carrier mobility, μ, and lifetime, τ, have been investigated for the chemical vapor deposited (CVD) diamond films using charged particle-induced conductivity and time resolved transient photo-induced conductivity. The collection distance, d, the average distance which electron and hole depart when driven by an applied electric field E, was measured by both methods. The collection distance is related to the carrier mobility and lifetime by d = μEτ Our measurements show that the collection distance increases linearly with sample thickness for CVD diamond films. The collection distance at the growth side of the CVD diamond film is comparable to that of single crystal natural type IIa diamond; at the substrate side of the film, the collection distance is near zero. No saturation of the collection distance is observed for film thickness up to 500 microns.


1999 ◽  
Vol 558 ◽  
Author(s):  
H. Kawamura ◽  
S. Kato ◽  
T. Maki ◽  
T. Kobayashi

ABSTRACTA planar electron emitter was fabricated employing chemical vapor deposited (CVD) diamond thin films. This device is composed of CVD diamond films selectively deposited on a pair of patterned Au/Cr films separated 2 micrometers from each other. When the driving voltage (Vd) was applied between the Au/Cr films, the extremely low threshold emission from diamond film was observed (Vd ∼ 10 V). Furthermore, by applying high voltage on anode screen placed above this device, part of emitted current was drawn to the anode and the luminescence from phosphors was clearly seen under Vd = 50V. The mechanism of electron emission from the diamond films used in this device was also discussed by comparing with the electron emission from isolated diamond particles. It was found that the effective work functions differ between the isolated particles and the continuous films. This result suggests a difference in the emission site of electrons.


Author(s):  
R.J. Graham ◽  
Mark M. Disko ◽  
T.D. Moustakas

Diamond films grown by chemical vapor deposition (CVD) are curently of great interest with potential applications in semiconductors and as wear resistant coatings. In order to understand and optimize the growth and properties of these films, it is necessary to characterize their microstructure. While such techniques as TEM and cathodoluminescence (CL) (in a SEM) can be used independently to provide microstructural and optical/electronic information respectively, the direct correlation of these two pieces of information is highly desirable. This is possible using the TEM CL technique (CL in a TEM) because the electron transparent specimen allows a direct comparison of CL with microstructure. The preliminary results obtained for CVD diamond films by this technique are presented here.The films examined were grown on a silicon (100) substrate by filament assisted CVD from a mixture of methane (2% vol.) and hydrogen at a pressure of 30 torr, using a tungsten filament operated at 1800°C.


ChemInform ◽  
2010 ◽  
Vol 28 (32) ◽  
pp. no-no
Author(s):  
M. S. HAQUE ◽  
H. A. NASEEM ◽  
A. P. MALSHE ◽  
W. D. BROWN

1996 ◽  
Vol 154 (1) ◽  
pp. 371-384 ◽  
Author(s):  
T. Sugino ◽  
J. Shirafuji

1999 ◽  
Vol 172 (1) ◽  
pp. 105-111 ◽  
Author(s):  
K. Van de Rostyne ◽  
C. Glorieux ◽  
W. Gao ◽  
V. Gusev ◽  
M. Nesladek ◽  
...  

Nano Letters ◽  
2014 ◽  
Vol 14 (9) ◽  
pp. 5097-5103 ◽  
Author(s):  
Kai Liu ◽  
Qimin Yan ◽  
Michelle Chen ◽  
Wen Fan ◽  
Yinghui Sun ◽  
...  

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