X-ray fluorescent spectrometer with total X-ray reflection for studies of kinetics of thin film deposition

2011 ◽  
Vol 47 (14) ◽  
pp. 1569-1573 ◽  
Author(s):  
V. M. Raznomazov ◽  
V. O. Ponomarenko ◽  
N. M. Novikovskii ◽  
Yu. I. Velichko ◽  
A. P. Kovtun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Kinetics Of

Chemical Bath Deposition of Lead Sulphide (PbS) Thin Film and their Characterization

2013 ◽  
Vol 209 ◽  
pp. 111-115 ◽  
Author(s):  
Sandip V. Bhatt ◽  
M.P. Deshpande ◽  
Bindiya H. Soni ◽  
Nitya Garg ◽  
Sunil H. Chaki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Excitation Wavelength ◽  
Face Centered Cubic ◽  
Phonon Modes ◽  
Lead Sulphide ◽  
X Ray

Thin film deposition of PbS is conveniently carried out by chemical reactions of lead acetate with thiourea at room temperature. Energy dispersive analysis of X-ray (EDAX), X-ray diffraction (XRD), selected area electron diffraction patterns (SAED), UV-Vis-NIR spectrophotometer, Scanning Electron Microscopy (SEM), Atomic force microscopy (AFM), Photoluminescence (PL) and Raman spectroscopy techniques are used for characterizing thin films. EDAX spectra shows that no impurity is present and XRD pattern indicates face centered cubic structure of PbS thin films. The average crystallite size obtained using XRD is about 15nm calculated using Scherrer’s formula and that determined from Hall-Williamson plot was found to be 18nm. SAED patterns indicate that the deposited PbS thin films are polycrystalline in nature. Blue shift due to quantum confinement was seen from the UV-Vis-NIR absorption spectra of thin film in comparison with bulk PbS. The Photoluminescence spectra obtained for thin film with different excitation sources shows sharp emission peaks at 395nm and its intensity of photoluminescence increases with increasing the excitation wavelength. Raman spectroscopy of deposited thin film was used to study the optical phonon modes at an excitation wavelength of 488nm using (Ar+) laser beam.

Thin Film Deposition and Transport in 2223 Bi‐Sr‐Ca‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
J.T. Kucera ◽  
D.G. Steel ◽  
D.W. Face ◽  
J.M. Graybeal ◽  
T.P. Orlando ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Annealing Conditions ◽  
Sensitive Function ◽  
Post Deposition

AbstractWe have reproducibly prepared thin films of Bi‐Sr‐Ca‐Cu‐O with Tc ≥ 105K. Depositions were done at ambient temperature with a subsequent post‐deposition anneal, and did not include lead substitution. X‐ray diffraction data indicates a majority fraction of the 2223 phase. These films possess very large grains of the order of 20‐30 u.m in size. Post‐deposition annealing conditions are a sensitive function of composition. Detailed transport measurements as a function of temperature and magnetic field have been obtained.

Study of Carbon Thin Film Deposition on Various Buffer Layer as Characterized by X-Ray Diffraction and Raman Spectroscopy

2015 ◽  
Vol 1112 ◽  
pp. 106-109
Author(s):  
Angga Virdian ◽  
Heldi Alfiadi ◽  
Yudi Darma
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Buffer Layer ◽  
Raman Spectra ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Carbon Thin Film ◽  
Carbon Based

Westudy the structural characteristic of carbon based thin filmprepared by DC unbalanced magnetron sputtering technique on different buffer layer such as γ-Al2O3, SnO2, and Cu. Sputtering parameters of carbon thin film were maintained identical for each buffer layer. Fe-doped carbon pellet and Argon gas have been used as sputtering target and to generate the sputtering plasma, respectively. The roles of buffer layer for the quality of carbon-based thin film have been investigated by X-ray diffraction and Raman spectroscopy analysis. Raman spectra indicatethe formation of agoodquality carbon thin film with crystal-like structure on γ-Al2O3and Cu buffer layer, in contrast to the SnO2buffer layer case. Furthermore Raman spectra confirm thehoneycomb structure with fewer defects in γ-Al2O3indicating that it is more suitable buffer layer than the other. We argue that γ-Al2O3buffer layerprovide a good nucleation site and promote a better atomic arrangement for carbon atoms to form a few layergraphene-like structure. The atomic geometry of γ-Al2O3supports the hexagonal atomic configurationfor carbon atom inthe formation of a few layers graphene. This study mightgive a new approach for the carbon based deposition towards the devices application.

The Plasma Deposition of Semiconductor Multilater Structures

1989 ◽  
Vol 165 ◽  
Author(s):  
Masataka Hirose ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray

AbstractThe early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

Multi-layer thin-film deposition for high-performance X-ray field-emission characteristics

2021 ◽  
pp. 2140043
Author(s):  
Tae Hwan Jang ◽  
Tae Gyu Kim ◽  
Mun Ki Bae ◽  
Kyuseok Kim ◽  
Jaegu Choi
Keyword(s):  
Thin Film ◽  
Field Emission ◽  
High Performance ◽  
Low Voltage ◽  
High Vacuum ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Emission Effect ◽  
Layer Thin Film

In this study, we developed a nanoscale emitter having a multi-layer thin-film nanostructure in an effort to maximize the field-emission effect with a low voltage difference. The emitter was a sapphire board on which tungsten–DLC multi-player thin film was deposited using PVD and CVD processes. This multi-layer thin-film emitter was examined in a high-vacuum X-ray tube system. Its field-emission efficiency according to the applied voltage was then analyzed.

scholarly journals Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1380
Author(s):  
Mircea Nicolaescu ◽  
Cornelia Bandas ◽  
Corina Orha ◽  
Viorel Şerban ◽  
Carmen Lazău ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Morphological Characteristics ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Synthesis Process ◽  
Second Step ◽  
X Ray Diffraction ◽  
Uv Photodetector ◽  
X Ray

The heterojunction based on n-TiO2 nanolayer/p-CuMnO2 thin film was achieved using an efficient two-step synthesis process for the fabrication of a UV photodetector. The first step consisted of obtaining the TiO2 nanolayer, which was grown on titan foil by thermal oxidation (Ti-TiO2). The second step consisted of CuMnO2 thin film deposition onto the surface of Ti-TiO2 using the Doctor Blade method. Techniques such as X-ray diffraction, UV-VIS analysis, SEM, and AFM morphologies were used for the investigation of the structural and morphological characteristics of the as-synthesized heterostructures. The Mott–Schottky analysis was performed in order to prove the n-TiO2/p-CuMnO2 junction. The I-V measurements of the n-TiO2 nanolayer/p-CuMnO2 thin film heterostructure confirm its diode characteristics under dark state, UV and visible illumination conditions. The obtained heterojunction, which is based on two types of semiconductors with different energy band structures, improves the separating results of charges, which is very important for high-performance UV photodetectors.

scholarly journals CISSY: A station for preparation and surface/interface analysis of thin film materials and devices

2016 ◽  
Vol 2 ◽  
Author(s):  
Iver Lauermann ◽  
Alexander Steigert
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Fabrication And Characterization ◽  
X Ray Absorption ◽  
Thin Film Devices

The CISSY end station combines thin film deposition (sputtering, molecular beam epitaxy ambient-pressure methods) with surface and bulk-sensitive analysis (photo emission, x-ray emission, x-ray absorption) in the same UHV system, allowing fast and contamination–free transfer between deposition and analysis. It is mainly used for the fabrication and characterization of thin film devices and their components like thin film photovoltaic cells, water-splitting devices and other functional thin film materials.

scholarly journals X-Ray Stress Measurement of Carbide in Tool Steel

2005 ◽  
Vol 490-491 ◽  
pp. 281-286
Author(s):  
Masahide Gotoh ◽  
Hajime Hirose ◽  
Toshihiko Sasaki
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Plastic Strain ◽  
Tool Steel ◽  
Physical Vapor Deposition ◽  
Stress Measurement ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
The Relationship

Thin films deposited by physical vapor deposition (PVD) were studied in terms of residual stress by the authors. The final purpose of our study is to evaluate the stress state at the interface between a substrate and a thin film. In this study, JIS-SKH55 tool steel without thin-film deposition was used as the specimen. SKH55 is a dual-phase steel consisting of martensite a’Fe and alloyed carbide M6C2. The specimens were heated to 573K, 798K, 843K and 893K. Recently, the relationship between the misfit of plastic strain and stress obtained by X-ray stress measurement has been proposed by the authors using the Eshelby/Mori-Tanaka model (EMT model). The residual stress and the misfit of plastic strain were determined by X-ray stress measurement using the EMT model. Results showed that as annealing temperature increased, the compressive residual stress remained nearly constant up to about 800K, and decreased above 800K in both phases. The misfit of plastic strain also remained nearly constant up to about 800K, and reached zero above 800K.

Sign in / Sign up

Export Citation Format

Share Document