Emission of Dislocation Loops from Nanovoids in an FCC Crystal Subjected to Shear Deformation under Post-Cascade Shock Waves

2019 ◽  
Vol 129 (6) ◽  
pp. 985-989
Author(s):  
A. V. Markidonov ◽  
M. D. Starostenkov ◽  
P. V. Zakharov ◽  
D. A. Lubyanoi ◽  
V. N. Lipunov
2021 ◽  
Vol 64 (6) ◽  
pp. 427-434
Author(s):  
A. V. Markidonov ◽  
M. D. Starostenkov ◽  
D. A. Lubyanoi ◽  
P. V. Zakharov ◽  
V. N. Lipunov

Volumetric defects in crystals worsen operational properties of structural materials; therefore, the problem of reducing discontinuities in solid is one of the most important in modern materials science. In the present work, the results of computer simulation are presented that demonstrate possibility of collapse of pores in a crystal in state of shear deformation under the influence of shock waves. Similar waves can occur in a solid under external high-intensity exposure. For example, in the zone of propagation of displacement cascade, there are regions in which occurs a mismatch between the thermalization times of atomic vibrations and the removal of heat from them. As a result of the expansion of such a region, a shock after cascade wave arises. The simulation was carried out based on molecular dynamics method using the potential calculated by means of mmersed atom method. As a bulk defect, we considered extended pores of cylindrical shape, which can be formed after passing of high-energy ions through a crystal, or, for example, when superheated closed fluid inclusions (mother liquor) reach the surface. The study has shown that such defects are the source of heterogeneous nucleation of dislocation loops, contributing to a decrease in the shear stresses in simulated structure. Dependences of the average dislocation density on the shear angle and temperature of the designed cell were established, and the loop growth rate was estimated. Generated shock waves create additional tangential stresses that contribute to the formation of dislocation loops; therefore, in this case, dislocations are observed even with a small shear strain. If during simulation the thermal effect increases, the pore collapses.


Author(s):  
S. Nakahara ◽  
D. M. Maher

Since Head first demonstrated the advantages of computer displayed theoretical intensities from defective crystals, computer display techniques have become important in image analysis. However the computational methods employed resort largely to numerical integration of the dynamical equations of electron diffraction. As a consequence, the interpretation of the results in terms of the defect displacement field and diffracting variables is difficult to follow in detail. In contrast to this type of computational approach which is based on a plane-wave expansion of the excited waves within the crystal (i.e. Darwin representation ), Wilkens assumed scattering of modified Bloch waves by an imperfect crystal. For localized defects, the wave amplitudes can be described analytically and this formulation has been used successfully to predict the black-white symmetry of images arising from small dislocation loops.


Author(s):  
Robert C. Rau ◽  
John Moteff

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.


Author(s):  
A. K. Eikum

Precipitation phenomena in concentrated aluminum-base silver alloys have been studied with a variety of techniques including electron microscopy. The purpose of the present work was to investigate the dislocation reactions that occur as silver atoms precipitate (or segregate) under a relatively low supersaturation. Specimens (0.1 mm thick) of Al-1 at. % Ag were quenched from ~500°C into an oil bath at room temperature and aged 30 min. at 265°C. The initial configurations available as sites for heterogeneous precipitation will therefore include perfect prismatic dislocation loops, Frank sessile loops and random segments of grown-in dislocations.


Author(s):  
T. Y. Tan ◽  
W. K. Tice

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.


Author(s):  
D.I. Potter ◽  
A. Taylor

Thermal aging of Ni-12.8 at. % A1 and Ni-12.7 at. % Si produces spatially homogeneous dispersions of cuboidal γ'-Ni3Al or Ni3Si precipitate particles arrayed in the Ni solid solution. We have used 3.5-MeV 58Ni+ ion irradiation to examine the effect of irradiation during precipitation on precipitate morphology and distribution. The nearness of free surfaces produced unusual morphologies in foils thinned prior to irradiation. These thin-foil effects will be important during in-situ investigations of precipitation in the HVEM. The thin foil results can be interpreted in terms of observations from bulk irradiations which are described first.Figure 1a is a dark field image of the γ' precipitate 5000 Å beneath the surface(∿1200 Å short of peak damage) of the Ni-Al alloy irradiated in bulk form. The inhomogeneous spatial distribution of γ' results from the presence of voids and dislocation loops which can be seen in the bright field image of the same area, Fig. 1b.


Author(s):  
J.A. Lambert ◽  
P.S. Dobson

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.


Author(s):  
J. J. Hren ◽  
W. D. Cooper ◽  
L. J. Sykes

Small dislocation loops observed by transmission electron microscopy exhibit a characteristic black-white strain contrast when observed under dynamical imaging conditions. In many cases, the topography and orientation of the image may be used to determine the nature of the loop crystallography. Two distinct but somewhat overlapping procedures have been developed for the contrast analysis and identification of small dislocation loops. One group of investigators has emphasized the use of the topography of the image as the principle tool for analysis. The major premise of this method is that the characteristic details of the image topography are dependent only on the magnitude of the dot product between the loop Burgers vector and the diffracting vector. This technique is commonly referred to as the (g•b) analysis. A second group of investigators has emphasized the use of the orientation of the direction of black-white contrast as the primary means of analysis.


Author(s):  
Robert C. Rau

Previous work has shown that post-irradiation annealing, at temperatures near 1100°C, produces resolvable dislocation loops in tungsten irradiated to fast (E > 1 MeV) neutron fluences of about 4 x 1019 n/cm2 or greater. To crystallographically characterize these loops, tilting experiments were carried out in the electron microscope on a polycrystalline specimen which had been irradiated to 1.5 × 1021 n/cm2 at reactor ambient temperature (∼ 70°C), and subseouently annealed for 315 hours at 1100°C. This treatment produced large loops averaging 1000 Å in diameter, as shown in the micrographs of Fig. 1. The orientation of this grain was near (001), and tilting was carried out about axes near [100], [10] and [110].


Author(s):  
M.A. Mogilevsky ◽  
L.S. Bushnev

Single crystals of Al were loaded by 15 to 40 GPa shock waves at 77 K with a pulse duration of 1.0 to 0.5 μs and a residual deformation of ∼1%. The analysis of deformation structure peculiarities allows the deformation history to be re-established.After a 20 to 40 GPa loading the dislocation density in the recovered samples was about 1010 cm-2. By measuring the thickness of the 40 GPa shock front in Al, a plastic deformation velocity of 1.07 x 108 s-1 is obtained, from where the moving dislocation density at the front is 7 x 1010 cm-2. A very small part of dislocations moves during the whole time of compression, i.e. a total dislocation density at the front must be in excess of this value by one or two orders. Consequently, due to extremely high stresses, at the front there exists a very unstable structure which is rearranged later with a noticeable decrease in dislocation density.


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