Study of the spectral sensitivity of silicon p? n junctions with a porous silicon film on the surface

2003 ◽  
Vol 70 (6) ◽  
pp. 440
Author(s):  
V. I. Blynskii ◽  
S. A. Malyshev
Keyword(s):  
Porous Silicon ◽  
Spectral Sensitivity ◽  
Silicon Film

Magnetic Properties of Ferrous Ferric Oxide Confined in Porous Silicon

2010 ◽  
Vol 663-665 ◽  
pp. 1142-1145
Author(s):  
Yuan Ming Huang ◽  
Bao Gai Zhai ◽  
Qing Lan Ma ◽  
Ming Meng
Keyword(s):  
Electron Microscopy ◽  
Magnetic Properties ◽  
Iron Oxide ◽  
Porous Silicon ◽  
Ferrous Iron ◽  
Silicon Film ◽  
X Ray ◽  
Loop Measurement ◽  
Scanning Electron

During the chemical synthesis nanometer-sized particles of ferrous iron oxide were in situ infiltrated into the mesopores in a porous silicon film. The microstructures of porous silicon and the magnetic properties of the nanometer-sized particles of the ferrous iron oxide were characterized with scanning electron microscopy, X-ray diffractometry, and the hysteresis loop measurement, respectively. Our results have demonstrated that the magnetic properties of the nanometer-sized Fe3O4 particles can be dramatically modified when they are confined into the mesopores of the porous silicon film.

Comparative Study Of The Growth Curves Of B. subtilis, K. pneumoniae, C. xerosis And E. coli Bacteria In Medium Containing Nanometric Silicon Particles

2002 ◽  
Vol 737 ◽  
Author(s):  
Lilyanna Pérez ◽  
Marjorie Flores ◽  
J. Avalos ◽  
L. San Miguel ◽  
O. Resto ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Growth Curve ◽  
Silicon Nanoparticles ◽  
Silicon Film ◽  
Growth Curves ◽  
Bacterial Strains ◽  
E Coli ◽  
Standard Curve ◽  
Nanometric Particles ◽  
Silicon Particles

ABSTRACTIn this research nanometric particles from luminescent (625nm) porous silicon film were synthesized. This particles were later inoculated in bacterial strains of B. subtilis (BSi) and K. pneumoniae (KSi). A comparison of the behavior of their growth curve and the ones reported for C. xerosis (XSi) and E. coli (ESi) in presence of silicon nanoparticles is presented. The growth curve of BSi, as well as the KSi, present changes compared to their standard curves. The BSi growth curve grows below the standard curve after the fifth hour, while in the KSi this happens after the eighth hour. Based on our preliminary findings we can speculate that at this point in time a critical population is present, and this may give rise to the possible incorporation of the silicon particles by the bacteria, or a possible pleomorphism inhibits reproduction. The stationary region, in both cases, takes place sooner than in the standard curve. No significant oscillations are observed in any case, which differs form the XSi curve, were oscillations of intervals of almost 1 hour were reported. In addition, these curves have a different behavior when compared to the ESi growth curve, in which no significant differences between the standard and the particle containing sample were reported.

Effect of the composition of electrolyte on separation of porous silicon film by electrochemical etching

2003 ◽  
Vol 197 (2) ◽  
pp. 507-511 ◽  
Author(s):  
C. S. Solanki ◽  
R. R. Bilyalov ◽  
J. Poortmans ◽  
J.-P. Celis ◽  
J. Nijs
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Silicon Film ◽  
Effect Of The Composition

Electrochemically Deposited Aluminum in Template of Porous Silicon Film

2010 ◽  
Vol 663-665 ◽  
pp. 1032-1035
Author(s):  
Bao Gai Zhai ◽  
Qing Lan Ma ◽  
Ming Meng ◽  
Yuan Ming Huang
Keyword(s):  
Porous Silicon ◽  
Electrochemical Deposition ◽  
High Surface ◽  
Silicon Film ◽  
Volume Ratio ◽  
Deposition Condition ◽  
Sem Images ◽  
Interesting Phenomenon ◽  
Electrochemically Deposited ◽  
The One

In this article, we report on the observations that in the aqueous electrolyte of aluminum nitrate, the thin metallic conducting films on both internal and external surface of porous silicon (PS) thin films that emit visible photoluminescence at room temperature prior to electrochemical deposition have been obtained under electrochemical deposition condition. Add to this high surface-to-volume ratio and these make it a good candidate for the catalyst supporter. We have investigated the surface morphology of PS after the interval of about 30 hours of electrochemically deposited aluminum by means of scanning electron microscopy (SEM). It has been shown from SEM images that not only micrometer-sized pores are smoothed by deposition of aluminum microcrystal, but also the presences of semi-sphere aluminum microcrystal which rooted in the tip of micrometer-sized pores are observed. On the one hand, this extremely interesting phenomenon which the micrometer-sized pores are smoothed may be explained in terms of principle of electrochemical deposition; on the other hand, we have laid the formation mechanism of semi-spherical aluminum microcrystal at the door of Gibbs free energy.

Self-Similarity of Electrochemically-Deposited Copper Films on Porous Silicon

2010 ◽  
Vol 428-429 ◽  
pp. 515-518
Author(s):  
Lan Li Chen ◽  
Bao Gai Zhai ◽  
Yuan Ming Huang
Keyword(s):  
Porous Silicon ◽  
Silicon Film ◽  
Silicon Films ◽  
The Self ◽  
Copper Films ◽  
Self Similarity ◽  
Control Electrode ◽  
Smooth Control ◽  
Electrochemically Deposited ◽  
Scanning Electron

The microstructures of electrochemically-deposited copper control electrode on semiconducting porous silicon films were investigated with scanning electron microscopy. Our results showed that smooth control electrode could be grown in areas far from the edge of porous silicon film while irregular electrode was formed on the circular edge of porous silicon films. The self-similarity of the electrochemically-deposited copper control electrode was analyzed in details.

Porous Silicon Multilayer Mirrors and Microcavity Resonators for Optoelectronic Applications

1998 ◽  
Vol 536 ◽  
Author(s):  
S. Chan ◽  
L. Tsybeskov ◽  
P.M. Fauchet
Keyword(s):  
Refractive Index ◽  
Porous Silicon ◽  
Current Density ◽  
Silicon Film ◽  
Light Output ◽  
Blue Shift ◽  
Optical Filters ◽  
Multilayer Structures ◽  
Maximum Reflectivity ◽  
The Difference

AbstractPorous silicon multilayer structures are easily manufactured using a periodic current density square pulse during the electrochemical dissolution process. The difference in porosity profile, corresponding to a variation in current density, is attributed to a difference in refractive index. Manipulating the difference in refractive index, high quality optical filters can be made with a maximum reflectivity peak ˜ 100%. The next logical step to further exploit these optical mirrors is to incorporate them into an LED device. The benefit of adding a multilayer mirror below a luminescent film of porous silicon is to significantly reduce the amount of light loss to the silicon substrate and increase the light output. However, oxidation is required to stabilize the as-anodized porous silicon film. This disrupts the overall index profile of the multilayer stack, causing the peak reflectance to blue shift. This phenomenon must be quantified and accounted before device implementation. We present a detailed study on the effects of oxidation temperature, gas environment, and annealing time of porous silicon multilayer structures in a device configuration.

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