Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

1975 ◽

Vol 33 ◽

pp. 96-97

Author(s):

R. W. Ditchfield ◽

A. G. Cullis

Keyword(s):

Epitaxial Growth ◽

Electron Energy ◽

Silicon Substrates ◽

Secondary Phases ◽

Si Substrates ◽

Transmission Electron ◽

Layer Structures ◽

Si Films ◽

Electron Energy Loss ◽

Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Download Full-text

Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

MRS Proceedings ◽

10.1557/opl.2012.867 ◽

2012 ◽

Vol 1426 ◽

pp. 331-337

Author(s):

Hiroshi Noge ◽

Akira Okada ◽

Ta-Ko Chuang ◽

J. Greg Couillard ◽

Michio Kondo

Keyword(s):

Epitaxial Growth ◽

Heating Temperature ◽

Exothermic Reaction ◽

Epitaxial Films ◽

Si Substrates ◽

Glass Substrates ◽

Good Crystallinity ◽

Crystalline Films ◽

Si Films ◽

First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

Download Full-text

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.247 ◽

2008 ◽

Vol 600-603 ◽

pp. 247-250 ◽

Cited By ~ 4

Author(s):

Yasuo Hirabayashi ◽

Satoru Kaneko ◽

Kensuke Akiyama

Keyword(s):

Epitaxial Growth ◽

Heating Rate ◽

Smooth Surface ◽

Early Stage ◽

Low Pressure ◽

Single Domain ◽

Single Crystalline ◽

Si Substrates

The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without thermal pits is studied. Subsequent hetero-epitaxial 3C-SiC with smooth surface have been grown by low-pressure CVD. Single-crystalline carbonized layers could be grown at 1050°C by using suitable carbonization processes. The surfaces of Si were covered with single-crystalline 3C-SiC layers at an early stage of carbonization, preventing out-diffusion of Si atoms from Si substrates. 3C-SiC epi-film have RMS = 0.4nm but no single domain. The protrusion density of the film was an order of 1000 cm-2.

Download Full-text

Selective epitaxial growth of dot structures on patterned Si substrates by gas source molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/3/009 ◽

1999 ◽

Vol 14 (3) ◽

pp. 257-265 ◽

Cited By ~ 26

Author(s):

Eun Soo Kim ◽

Noritaka Usami ◽

Yasuhiro Shiraki

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Si Substrates ◽

Selective Epitaxial Growth ◽

Gas Source

Download Full-text

Recent progress of III–V quantum dot infrared photodetectors on silicon

Journal of Materials Chemistry C ◽

10.1039/c9tc05738b ◽

2019 ◽

Vol 7 (46) ◽

pp. 14441-14453 ◽

Cited By ~ 4

Author(s):

Aobo Ren ◽

Liming Yuan ◽

Hao Xu ◽

Jiang Wu ◽

Zhiming Wang

Keyword(s):

Quantum Dots ◽

Quantum Dot ◽

Epitaxial Growth ◽

Recent Progress ◽

Infrared Photodetectors ◽

Heterogeneous Integration ◽

Si Substrates ◽

Quantum Dot Infrared Photodetectors ◽

Infrared Photodetection

Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.

Download Full-text

Multilayer epitaxial growth of BP and Si ON Si substrates

Journal of Crystal Growth ◽

10.1016/0022-0248(80)90106-2 ◽

1980 ◽

Vol 50 (2) ◽

pp. 549-551 ◽

Cited By ~ 9

Author(s):

K. Nonaka ◽

C.J. Kim ◽

K. Shohno

Keyword(s):

Epitaxial Growth ◽

Si Substrates

Download Full-text

Diffusion Layers Formed in Si Substrates during the Epitaxial Growth of BP and Application to Devices

Journal of The Electrochemical Society ◽

10.1149/1.2131514 ◽

1978 ◽

Vol 125 (4) ◽

pp. 633-637 ◽

Cited By ~ 24

Author(s):

Takao Takenaka ◽

Mitsuharu Takigawa ◽

Katsufusa Shohno

Keyword(s):

Epitaxial Growth ◽

Si Substrates ◽

Diffusion Layers

Download Full-text

Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

MRS Proceedings ◽

10.1557/proc-358-1023 ◽

1994 ◽

Vol 358 ◽

Cited By ~ 1

Author(s):

K. Dovidenko ◽

S. Oktyabrsky ◽

J. Narayan ◽

M. Razeghi

Keyword(s):

Epitaxial Growth ◽

Substrate Surface ◽

Wide Band ◽

X Ray Diffraction ◽

Wide Band Gap ◽

High Quality ◽

Microstructural Characteristics ◽

X Ray ◽

Si Substrates ◽

Transmission Electron

ABSTRACTThe microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Download Full-text