Optical properties of plasma-polymerized organosilicone films

1982 ◽  
Vol 60 (5) ◽  
pp. 628-631 ◽  
Author(s):  
M. R. Wertheimer ◽  
J. E. Klemberg-Sapieha ◽  
R. Corriveau
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Measured Data ◽  
Film Deposition ◽  
Lorenz Equation ◽  
Infrared Data

The refractive index, n, of plasma-polymerized hexamethyldisiloxane and -silazane thin films has been measured by ellipsometry at 632.8 nm. For both types of films n was found to increase from about 1.4 to about 1.7, with increasing substrate temperature during film deposition, Ts. Using the Lorentz–Lorenz equation and our previously published density and infrared data for these thin film materials, it is shown that films produced at [Formula: see text] are essentially "inorganic." Calculated n values for hypothetical structures (Si2O)x and (Si2N)x (expected from the "monomer" compositions) agree to within a few percent with measured data.

Optical Properties of NiO Thin Films: A Potential Material for Optoelectronic Devices

2012 ◽  
Vol 488-489 ◽  
pp. 103-108 ◽  
Author(s):  
Manisha Tyagi ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Band Gap ◽  
Urbach Energy ◽  
Rf Sputtering ◽  
Blue Shift ◽  
Structural Disorder ◽  
Near Ir

The influence of substrate temperature on the UV-Visible-near-IR optical properties, namely the band gap, the Urbach energy and the refractive index of NiO thin films deposited by RF sputtering has been investigated. The optical band gap of thin films showed the blue-shift in the transmission spectra with increase in the substrate temperature which is related to variation in carrier concentration of the deposited films. Urbach energy (EU) values indicate that the films deposited at 400 oC substrate temperature show least structural disorder. The refractive index of the films is found to decrease continuously with increase in the substrate temperature at all photon energies in the visible and near-IR region, and is attributed to the decreasing packing density of the films. Introduction

Investigation on Optical Properties of Transparent ITO Thin Films

2011 ◽  
Vol 347-353 ◽  
pp. 3481-3484
Author(s):  
Xue Hua Li ◽  
Dong Sheng Wang ◽  
Jian Zhou Du
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Glass Substrate ◽  
Film Theory ◽  
Single Layer ◽  
Minimum Value ◽  
Ito Thin Films ◽  
Layer Thin Film

Based on the single-layer thin film theory, we calculated transmittance of ITO thin film. The reflectivity arrive a maximum or a minimum according to whether the refractive index of film is greater or smaller than the refractive index of the glass substrate. we obtain the same maximum of transparence which is above 95% and the minimum value which decrease to 76.5% with the increase of refractive index.

The Influence of Substrate Temperature on the Morphological and Optical Properties of ZnTiO3 Thin Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 804 ◽  
pp. 3-7
Author(s):  
Chao Zhan ◽  
Wen Jian Ke ◽  
Xin Ming Li ◽  
Wan Li Du ◽  
Li Juan Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Dispersion Model ◽  
Film Surface ◽  
Cubic Phase ◽  
Different Temperatures

Cubic ZnTiO3thin films have been prepared by radio frequency magnetron sputtering on n-type (100) Si substrate at different temperatures. The morphological and optical properties of ZnTiO3films in relation to substrate temperatures are investigated by spectroscopic ellipsometry (SE) and AFM as well as SEM in detail. X-ray diffraction (XRD) measurement shows that all the films have a cubic phase structure and the optimum substrate temperature to form crystalline ZnTiO3thin film is 250 °C. Through SEM and AFM, the particle size in thin films and film surface roughness increase with increasing the substrate temperature. Based on a parameterized TaucLorentz dispersion model, the optical constants and surface roughness of ZnTiO3films related to the substrate temperature are systematically extracted by SE measurement. The surface roughness of the film measured from AFM agrees well with result extracted from SE, which proved that the established SE model is reasonable. With increasing substrate temperature, the refractive index decreases and the main factor in determining the refractive index was deduced to be the surface roughness related to the film packing density. The extinction coefficient of the samples is close to zero, but increases slightly with the increase of the substrate temperature, which is due to the enhancement of scattering effect in the crystalline ZnTiO3film.

Properties of TiO2 Thin Film Prepared by Sol-Gel Dip Coating

2015 ◽  
Vol 723 ◽  
pp. 528-531
Author(s):  
Jun Wang ◽  
Ling Yun Bai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Gel Method ◽  
Glass Substrates

TiO2 thin films were prepared on glass substrates by sol-gel method. The effect of withdraw speed on the thickness and optical properties of TiO2 thin films was investigated. The films were transparent in the visible wavelength. The thickness of the TiO2 films was increased from 90 nm for the withdraw speed of 1000 μm/s to 160 nm for the withdraw speed of 2000 μm/s. While, The refractive index of the TiO2 thin film decreased from 2.38 to 2.07. It may be due to the porosity of the film was increased. The optical band-gap of the films was around 3.45 eV.

Solid-phase crystallization of high growth rate amorphous silicon films deposited by gas-jet electron beam plasma CVD method

2014 ◽  
Vol 92 (7/8) ◽  
pp. 723-727 ◽  
Author(s):  
E.A. Baranov ◽  
S.Ya. Khmel ◽  
A.O. Zamchiy ◽  
I.V. Cheskovskaya ◽  
M.R. Sharafutdinov
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Gas Jet ◽  
Solid Phase Crystallization ◽  
Electron Beam Plasma

Solid phase crystallization of amorphous silicon films (a-Si:H) deposited by gas-jet electron beam plasma chemical vapor deposition method and annealed at 700 °C in vacuum has been investigated. This method provides high deposition rates (up to 2.3 nm/s) of a-Si:H thin films in a standard vacuum chamber. The effects of varying the substrate temperature from 190 to 415 °C on the structural and optical properties of the as-deposited amorphous films and postannealed nanocrystalline films have been investigated. The crystallite size was determined by X-ray diffraction (about 5–8 nm) and agrees with that obtained from Raman scattering. The estimated degree of crystallinity was 45%–59%. Optical transmission spectra were recorded to investigate the optical properties and thickness of the silicon thin films. The refractive index and optical band gap data was obtained for both as-deposited amorphous and post-annealed nanocrystalline silicon. The behavior of the refractive index of nanocrystalline silicon depending on the substrate temperature is correlated with the crystalline volume fraction. a-Si:H films obtained at low temperatures have larger crystallite size and better crystallinity after annealing.

scholarly journals Effect of Annealing Temperature in Improvement the Optical Properties of TiO2 Doped Fe2O3 to Use in Thin Film

2019 ◽  
pp. 1-12
Author(s):  
Abubakr Mahmoud Hamid ◽  
Hassan Wardi Hassan ◽  
Fatima Ahmed Osman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Iron Oxide ◽  
Titanium Oxide ◽  
Extinction Coefficient ◽  
Tio2 Thin Film ◽  
Annealing Temperature ◽  
Spray Pyrolysis Deposition

Solar energy is already has being widely successfully used in residential and industrial setting for thermal and electrical application such as space technology, communication, etc. I. Aims: The aim of this study the effect of the annealing temperature in improvement optical properties of titanium oxide nanostructure doped iron oxide for use in thin film. Study Design: The spray pyrolysis deposition method used for preparation the nanostructure material. Place and Duration of Study: This study was conducted in department of physics and department of materials sciences, Al-Neelain University, between January 2016 and January 2019.  Methodology: Thin films of Titanium Oxide (TiO2) doped Iron Oxide (Fe2O3) have been prepared by chemical spray pyrolysis deposition technique. A laboratory designed glass atomizer was used for spraying the aqueous solution. Which has an output nozzle about 1 mm. then film were deposited on preheated cleaned glass substrates at temperature of 400°C. we used different concentration to study optical parameters. A 1.5 g TiO2 powder of anatase structure doped with 1.5 g of Fe2O3 was mixed with 2 ml of ethanol and stirred using a magnetic stirrer for 30 minutes to form TiO2 paste to obtain the starting solution for deposition and spray time was 10 s and spray interval 2 min was kept constant. The carrier gas (filtered compressed air) was maintained at a pressure of 105 Nm-2, and distance between nozzle and substrate was about 30 cm ± 1 cm. Thickness of sample was measured using the weighting method and was found to be around 400nm. Optical transmittance and absorbance were record in wavelength range of (200-1100) nm using UV-Visible spectrophotometer (Shimadzu Company Japan). Results: The results obtained showed that the optical band gap decreased from 5.6eV before annealing to (3.9, 3.26, 3.24 and 3.27 eV) after annealing temperature at(450° – 500°) for TiO2:Fe2O3 thin films, this result refer to the broadening of  secondary levels that product by TiO2: doping to the Fe2O2thin films. Also the results showed the variation of refractive index with wavelength for different concentration after annealing temperature at (450° – 500°) of TiO2: Fe2O3 films from this figure, it is clear that n decrease with low concentration and increase with high concentration after annealing temperature that mean the density is decreased of this films. In addition the extinction coefficient of TiO2:Fe2O3 thin films recorded before annealing and with different concentration (1.1, 1.2, 1,5 and 1,6) and in the range of (300 – 1200) nm and at annealing temperature from (450° – 500°). It observed from that the extinction coefficient, decrease sharply with the increase of wavelength for all prepared films and all the sample after annealing is interference between them accept the sample before annealing is far from the other sample. Conclusion: The TiO2 thin film shows better result after annealing; By exposing temperature during annealing process degree at (450o- 500o) is found to be the best temperature for annealing TiO2 thin film. The study concluded that an annealing temperature Contributes to the improvement of optical properties related to increasing the efficiency of the solar cell, especially the refractive index, energy gap, extinction coefficient.

Features of the Implementation of the Vegard’s Law in Thin Films of Rare Earth Elements Compounds

2019 ◽  
Vol 822 ◽  
pp. 795-800
Author(s):  
G.D. Khavrov ◽  
V.V. Kaminski ◽  
N.V. Sharenkova ◽  
A.A. Vinogradov
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Rare Earth ◽  
Substrate Temperature ◽  
Solid Solutions ◽  
Film Deposition ◽  
Technological Parameters ◽  
Vegard’S Law ◽  
Explosive Evaporation ◽  
Thin Polycrystalline

In this work, the fulfillment of Vegard's law in thin polycrystalline films Sm1-xGdxS and Sm1-xEuxS, obtained by the method of explosive evaporation of the powder in vacuum, is investigated. It is shown that compliance with the Vegard law in the manufacture of thin-film structures based on Sm1-xEuxS solid solutions is possible only with the same technological parameters of film deposition, in particular, the substrate temperature. In the case of the Sm1-xGdxS solid solutions, the law is observed only in the metal phase of the solid solutions, with x> 0.12.

scholarly journals Effect of sputtering power on optical Properties of RF sputtering deposited Ti6Al4V Thin Films

2019 ◽  
Vol 15 (33) ◽  
pp. 71-77
Author(s):  
Mohammed K. Khalaf
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Glass Substrate ◽  
Rf Sputtering ◽  
Rf Power ◽  
Sputtering Power

Ti6Al4V thin film was prepared on glass substrate by RFsputtering method. The effect of RF power on the optical propertiesof the thin films has been investigated using UV-visibleSpectrophotometer. It's found that the absorbance and the extinctioncoefficient (k) for deposited thin films increase with increasingapplied power, while another parameters such as dielectric constantand refractive index decrease with increasing RF power.

scholarly journals Effect of Precursor Concentration and Annealed Substrate Temperature on the Crystal Structure, Electronic and Optical Properties of ZnO thin film

2020 ◽  
Vol 9 (1) ◽  
pp. 57-65
Author(s):  
Yus Rama Denny Muchtar ◽  
◽  
Teguh Firmansyah ◽  
Adhitya Trenggono ◽  
Danu Wijaya ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Particle Size ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Precursor Concentration ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Electronic And Optical Properties

This study carried out on the effect of precursor concentration and annealed substrate temperature on the crystal structure, electronic and optical properties of ZnO thin film. An aqueous solution of Acid Nitrite was used as precursors and its concentration was varied from 0.1 M to 0.4 M. The ZnO thin film was deposited on the glass substrate by Spray Pyrolysis Deposition and annealed with different temperature from 300 oC to 600 oC. The crystal structure, electronic and optical properties were investigated by Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and UV-Spectrometer. XRD result showed that all thin films have amorphous hexagonal wurtzite crystalline. Particle sizes ranging from 21.83 to 43.67 nm were calculated through Debye-Scherer Method. It showed that the concentration of the precursor had slightly impact on the particle size. Meanwhile, the increase in particle size with increasing annealed temperature is found to be gradual. The average transparent of all thin film was more than 80%. The bandgap of the ZnO thin films was estimated by Tauc Plot Relation. It showed that the bandgap values were increased with the increasing of precursor concentration due to Burstein-Moss Effect. In addition, the decrease in band gap values was found with increasing annealed temperature. Our results demonstrated that the varying precursor concentration and annealed substrate temperature can enhance the structure, electronic and the optical properties of ZnO thin films.

Study on Optical Properties of Silicon Oxycarbide Thin Films Prepared by RF Magnetron Sputtering

2012 ◽  
Vol 482-484 ◽  
pp. 1307-1312
Author(s):  
Tao Chen ◽  
Duo Shu Wang
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Rf Magnetron Sputtering ◽  
Silicon Oxycarbide ◽  
Working Pressure ◽  
Sputtering Power

Silicon oxycarbide（SiCO）thin films is a kind of glassy compound materials, which possess many potential excellent properties such as thermal stability, wide energy band, high refractive index and high hardness, and have many potential applications in space. The preparation processes of SiCO thin films by RF magnetron sputtering with different substrate temperature, working pressure and sputtering power were studied. And various surface analysis methods were used to characterize the optical properties of SiCO thin films. The dependence of the properties on the process parameters was also studied. The tested properties of SiCO thin films deposited on K9 glass indicated that lower substrate temperature and sputtering power, higher working pressure could get SiCO thin films with better light penetration and the refractive index of SiCO thin films had a large varying region with the change of the process parameters. With different substrate temperature, working pressure or sputtering power, the maximum refractive index at 633nm（wavelength） are 2.20051, 2.12072 and 1.98959, respectively, and the minimum ones are 1.89426, 1.83176 and 1.8052, respective.

Sign in / Sign up

Export Citation Format

Share Document