scholarly journals Effect of Annealing Temperature in Improvement the Optical Properties of TiO2 Doped Fe2O3 to Use in Thin Film

2019 ◽  
pp. 1-12
Author(s):  
Abubakr Mahmoud Hamid ◽  
Hassan Wardi Hassan ◽  
Fatima Ahmed Osman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Iron Oxide ◽  
Titanium Oxide ◽  
Extinction Coefficient ◽  
Tio2 Thin Film ◽  
Annealing Temperature ◽  
Spray Pyrolysis Deposition

Solar energy is already has being widely successfully used in residential and industrial setting for thermal and electrical application such as space technology, communication, etc. I. Aims: The aim of this study the effect of the annealing temperature in improvement optical properties of titanium oxide nanostructure doped iron oxide for use in thin film. Study Design: The spray pyrolysis deposition method used for preparation the nanostructure material. Place and Duration of Study: This study was conducted in department of physics and department of materials sciences, Al-Neelain University, between January 2016 and January 2019.  Methodology: Thin films of Titanium Oxide (TiO2) doped Iron Oxide (Fe2O3) have been prepared by chemical spray pyrolysis deposition technique. A laboratory designed glass atomizer was used for spraying the aqueous solution. Which has an output nozzle about 1 mm. then film were deposited on preheated cleaned glass substrates at temperature of 400°C. we used different concentration to study optical parameters. A 1.5 g TiO2 powder of anatase structure doped with 1.5 g of Fe2O3 was mixed with 2 ml of ethanol and stirred using a magnetic stirrer for 30 minutes to form TiO2 paste to obtain the starting solution for deposition and spray time was 10 s and spray interval 2 min was kept constant. The carrier gas (filtered compressed air) was maintained at a pressure of 105 Nm-2, and distance between nozzle and substrate was about 30 cm ± 1 cm. Thickness of sample was measured using the weighting method and was found to be around 400nm. Optical transmittance and absorbance were record in wavelength range of (200-1100) nm using UV-Visible spectrophotometer (Shimadzu Company Japan). Results: The results obtained showed that the optical band gap decreased from 5.6eV before annealing to (3.9, 3.26, 3.24 and 3.27 eV) after annealing temperature at(450° – 500°) for TiO2:Fe2O3 thin films, this result refer to the broadening of  secondary levels that product by TiO2: doping to the Fe2O2thin films. Also the results showed the variation of refractive index with wavelength for different concentration after annealing temperature at (450° – 500°) of TiO2: Fe2O3 films from this figure, it is clear that n decrease with low concentration and increase with high concentration after annealing temperature that mean the density is decreased of this films. In addition the extinction coefficient of TiO2:Fe2O3 thin films recorded before annealing and with different concentration (1.1, 1.2, 1,5 and 1,6) and in the range of (300 – 1200) nm and at annealing temperature from (450° – 500°). It observed from that the extinction coefficient, decrease sharply with the increase of wavelength for all prepared films and all the sample after annealing is interference between them accept the sample before annealing is far from the other sample. Conclusion: The TiO2 thin film shows better result after annealing; By exposing temperature during annealing process degree at (450o- 500o) is found to be the best temperature for annealing TiO2 thin film. The study concluded that an annealing temperature Contributes to the improvement of optical properties related to increasing the efficiency of the solar cell, especially the refractive index, energy gap, extinction coefficient.

Enhancement of Solar Cell Efficiency by Using TiO2 Nanostructure Doped Fe2O3 Dye and Effect Concentration of Solvent on Optical Properties

2019 ◽  
pp. 1-14
Author(s):  
Abubakr Mahmoud Hamid ◽  
Hassan Wardi Hassan ◽  
Fatima Ahmed Osman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Solar Cell ◽  
Spray Pyrolysis ◽  
Titanium Oxide ◽  
Deposition Method ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Spray Pyrolysis Deposition

Solar energy has the greatest potential of all the sources of renewable energy, as only a small amount of this form of energy could be used, especially when other sources (coal, oil or gas) in the country have depleted. A solar cell is a solid electrical device that converts solar energy directly to electricity. Hybrid solar cells based on inorganic and organic compounds are a promising renewable energy source. Aims: The aim of this study was to prepare a nanostructured thin film of titanium oxide: doped iron oxide for enhancement of solar cell efficiency. In addition to studying the effect doped on optical properties of titanium oxide nanostructure thin film. Study Design: The spray pyrolysis deposition method used for preparation the nanostructure material. Place and Duration of Study: This study was conducted in the department of physics and department of materials sciences, Al-neelain university, between January 2016 and January 2019. Methodology: Thin films of Titanium Oxide (TiO2) doped Iron Oxide (Fe2O3) have been prepared by chemical spray pyrolysis deposition technique. A laboratory designed glass atomizer was used for spraying the aqueous solution. Which has an output nozzle about 1mm then the film was deposited on preheated cleaned glass substrates at the temperature of 400ºC. we used different concentration to study optical parameters. A 1.5 g TiO2 powder of anatase structure doped with 1.5 g of Fe2O3 was mixed with 2 ml of ethanol and stirred using a magnetic stirrer for 30 minutes to form TiO2 paste to obtain the starting solution for deposition and spray time was 10 s and spray interval 2 min was kept constant. The carrier gas (filtered compressed air) was maintained at a pressure of 105 Nm-2, and distance between nozzle and substrate was about 30 cm ± 1 cm. The thickness of the sample was measured using the weighting method and was found to be around 400 nm. Optical transmittance and absorbance were records in the wavelength range of (200-1100) nm using UV-Visible spectrophotometer (Shimadzu Company Japan). Results: The results obtained showed that the optical band gap decreased from 5.58 eV before doping to (3.9, 3.81, 3.81 and 3.81 eV) after doped for TiO2:Fe2O3 thin films, this result refers to the broadening of secondary levels that product by TiO2: doping to the Fe2O2 thin films. Also, the results showed the variation of refractive index with wavelength for different concentration after doped of TiO2:Fe2O3 films from this figure, it is clear that n decrease with low concentration and increase with high concentration after doped that mean the density is decreased of this films. In addition the extinction coefficient of TiO2:Fe2O3 thin films recorded before doped and with different concentration (1.1, 1.2, 1.5 and 1.6 mol/L) and in the range of (300 – 1200) nm and after doped it observed from that the extinction coefficient, decrease sharply with the increase of wavelength for all prepared films and all the sample after doped is interference between them accept the sample before annealing is far from the other sample. Conclusion: Based on the results obtained doping of titanium oxide increases the efficiency of TiO2 thin film in DSSC. It also proves that the fabrication of TiO2 thin films by spray pyrolysis deposition method is successful.

scholarly journals Influence of annealing temperature on the structural and optical properties of As30Te70 thin films

2017 ◽  
Vol 35 (2) ◽  
pp. 335-345 ◽  
Author(s):  
A.M. Abd-Elnaiem ◽  
M. Mohamed ◽  
R.M. Hassan ◽  
A.A. Abu-Sehly ◽  
M.A. Abdel-Rahim ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Glass Transition ◽  
Extinction Coefficient ◽  
Chalcogenide Glasses ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Optical Parameters ◽  
Optical Energy Gap

Abstract Chalcogenide glasses have attracted much attention largely due to their interesting physical and chemical properties. Though few published articles exist on the As-Te system, little is known about the optical properties of eutectic or near eutectic composition of As-Te system upon heat treatment. Therefore, this paper reports the effects of annealing temperature on the structural and optical parameters of As30Te70 thin films. The bulk and thin films of 150 nm thick As30Te70 chalcogenide glasses were prepared by melt-quenching and thermal evaporation techniques, respectively. The glass transition and crystallization reactions of the bulk samples were investigated using differential scanning calorimetry (DSC). The influence of annealing temperature on the transformation of the crystal structure was studied by X-ray diffraction (XRD), while the surface morphology of the annealed samples was examined using scanning electron microscope (SEM). The optical band gap, refractive index and extinction coefficient were also calculated. The DSC scans showed that the melting temperature remains constant at 636.56 K. In addition, other characteristic temperatures such as the glass transition temperature, the onset crystallization temperature, and the crystallization peak temperature increase with increasing the heating rate. The crystalline phases for the as-prepared and annealed films consist of orthorhombic As, hexagonal Te, and monoclinic As2Te3 phases. Furthermore, the average crystallite size, strain, and dislocation density depend on the annealing temperature. The optical absorption results revealed that the investigated films have a direct transition, and their optical energy gap decreases from 1.82 eV to 1.49 eV as the annealing temperature increases up to 433 K. However, the refractive index, extinction coefficient, dielectric constant and the ratio of free carrier concentration to its effective mass, increase with increasing the annealing temperature.

scholarly journals Annealing Effect on Some Optical Properties of Cr2O3 Thin Films Prepared by Spray Pyrolysis Technique

2011 ◽  
Vol 8 (2) ◽  
pp. 561-565
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Spray Pyrolysis ◽  
Annealing Temperature ◽  
Spray Pyrolysis Technique ◽  
Annealing Effect ◽  
Before And After

Cr2O3 thin films have been prepared by spray pyrolysis on a glass substrate. Absorbance and transmittance spectra were recorded in the wavelength range (300-900) nm before and after annealing. The effects of annealing temperature on absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of dielectric constant and optical conductivity were expected. It was found that all these parameters increase as the annealing temperature increased to 550°C.

Investigation on Optical Properties of Transparent ITO Thin Films

2011 ◽  
Vol 347-353 ◽  
pp. 3481-3484
Author(s):  
Xue Hua Li ◽  
Dong Sheng Wang ◽  
Jian Zhou Du
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Glass Substrate ◽  
Film Theory ◽  
Single Layer ◽  
Minimum Value ◽  
Ito Thin Films ◽  
Layer Thin Film

Based on the single-layer thin film theory, we calculated transmittance of ITO thin film. The reflectivity arrive a maximum or a minimum according to whether the refractive index of film is greater or smaller than the refractive index of the glass substrate. we obtain the same maximum of transparence which is above 95% and the minimum value which decrease to 76.5% with the increase of refractive index.

Effect of Annealing Temperature on The Refrective Index and Dielectric Properties of TiO2/MnO2 CORE/SHELL Thin Films

2014 ◽  
Vol 6 (3) ◽  
pp. 1227-1232
Author(s):  
Peter Ekuma Agbo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Dielectric Properties ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Xrd Analysis ◽  
Core Shell ◽  
Structural Nature ◽  
Deposited Film

Thin film of the form TiO2/MnO2 was deposited using the chemical bath method. The deposited thin films were annealed at temperatures of in order to investigate the effect of annealing temperature on the refractive index and dielectric property. To do this the films were characterized using UV-Spectrophotometer and XRD analysis was also carriedout to study the structural nature of the deposited film. Our results reaveled that annealing has profound effect on theindex of refraction and the dielectric properties.  

Refractive Index and Extinction Coefficient of ZnO:Al Thin Films Derived by Sol-Gel Dip Coating Technique

2013 ◽  
Vol 334-335 ◽  
pp. 290-293 ◽  
Author(s):  
N. Baydogan ◽  
T. Ozdurmusoglu ◽  
Huseyin Cimenoglu ◽  
A.B. Tugrul
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Extinction Coefficient ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Optical Parameters ◽  
Coating Technique ◽  
Glass Substrates ◽  
Dip Coating Technique

Doped ZnO:Al thin films were deposited on glass substrates by the solgel dip technique. Optical parameters such as the refractive index and the extinction coefficient tend to change with increasing annealing temperature.

Properties of TiO2 Thin Film Prepared by Sol-Gel Dip Coating

2015 ◽  
Vol 723 ◽  
pp. 528-531
Author(s):  
Jun Wang ◽  
Ling Yun Bai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Gel Method ◽  
Glass Substrates

TiO2 thin films were prepared on glass substrates by sol-gel method. The effect of withdraw speed on the thickness and optical properties of TiO2 thin films was investigated. The films were transparent in the visible wavelength. The thickness of the TiO2 films was increased from 90 nm for the withdraw speed of 1000 μm/s to 160 nm for the withdraw speed of 2000 μm/s. While, The refractive index of the TiO2 thin film decreased from 2.38 to 2.07. It may be due to the porosity of the film was increased. The optical band-gap of the films was around 3.45 eV.

Effects of Annealing Treatment on WO3 Thin Films Prepared by DC Reactive Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 248-250 ◽  
Author(s):  
Thanat Srichaiyaperk ◽  
Kamon Aiempanakit ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Reactive Magnetron ◽  
Thin Film Thickness ◽  
Dc Reactive Magnetron Sputtering

Tungsten trioxide (WO3) thin films were prepared by a DC reactive magnetron sputtering technique. The thin film fabrication process used tungsten (99.995%) as the sputtering target, the mixture of argon and oxygen as sputtering and reactive gases, and silicon (100) and glass slides as the substrates. The effects of annealing temperature in the range of 200-400°C on physical and optical properties of the WO3 thin films were investigated. The nanostructures and morphologies of these films were characterized by grazing-incident X-ray diffraction (GIXRD) and field-emission scanning electron microscopy (FE-SEM). The optical properties were analyzed by variable-angle spectroscopic ellipsometry (VASE) and spectrophotometer. From the XRD results, the as-deposited and annealed WO3 thin films up to 300°C were all amorphous. Only the WO3 thin film annealed at 400°C exhibited a polycrystalline monoclinic phase. The FE-SEM cross-sections and surface topologies demonstrated nearly identical thin-film thickness and physical grain sizes. The SE analyses showed that the thin films were all homogeneous dense layers with additional surface roughness. With the annealing treatment, the thin film thickness was slightly decreased. The SE physical model was best optimized with the Cauchy optical model. The results showed that the refractive index at 550 nm was increased from 2.17 to 2.23 with the increased annealing temperature. The results from the spectrophotometer confirmed that the optical spectra for the WO3 thin films were decreased. This study demonstrated that, the thin film annealed at 400°C exhibited the slightly lower transparency, which corresponded to the results from the GIXRD and SE analyses.

scholarly journals Spray Pyrolysis Deposition and Effect of Annealing Temperature on Optical Properties of Cu:NiO Film

2015 ◽  
Vol 47 ◽  
pp. 178-184 ◽  
Author(s):  
Khalid Haneen Abass
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Spray Pyrolysis Method ◽  
Spectral Transmittance ◽  
Pyrolysis Method ◽  
Spray Pyrolysis Deposition ◽  
Uv Visible

Spray pyrolysis method that used to prepare Cu:NiO thin films onto glass substrate with various annealing temperature. Spectral transmittance of prepared thin films determined by UV-Visible spectrophotometer in the range of (380-900) nm. The transmittance decreased with increasing annealing temperature. While the absorption coefficient and extinction coefficient increased with increasing annealing temperature. Energy gap decreased from 2.9 eV before annealing to 2.78 eV after 500 °C annealing temperature.

scholarly journals Investigation the effect of annealing temperature on the optical properties of CdSe thin films

2018 ◽  
Vol 6 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Sabah M. Ahmed ◽  
Raghad Y. Mohammed ◽  
Sedki O. Yousif
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Transmittance Spectrum ◽  
Stable Phase ◽  
Cdse Thin Film ◽  
Deposited Films

Introduction: CdSe is an important II–VI semiconducting material due to its typical optical properties such as small direct band gap (1.7 eV) and a high refractive index and, thus, a major concern is focused on the investigation of optical properties of CdSe thin films which is important to promote the performances of the devices of solid -state such as SC (solar cells), thin film transistors, LED (light-emitting diodes), EBPL (electron–beam pumped lasers) and electroluminescent devices. In the present work, CdSe thin films were deposited by thermal evaporation method and the results have been analysed and presented. Materials and Methods: CdSe thin films has been deposited on glass microscopic slides as substrates of (75×25×1 mm) under room temperature using PVD technique. CdSe blended powders gets evaporated and condensed on the substrate. The film thickness (t = 100 ± 5 nm) which is measured using Michelson interferometry method. Transmission spectrum, from 200-1100 nm, are scanned using two beams UV–VIS Spectrophotometer (6850 UV/Vis. Spectrophotometer-JENWAY). The deposited films then were annealed at temperature range of (1500C to 3500C) under vacuum to have a stable phase of the material and prevent surface oxidization. Results and Discussion: A transmittance spectrum of CdSe thin film is scanned over wavelength range 200 to 1100 nm using a (6850 UV/Vis. Spectrophotometer-JENWAY) at room temperature. The transmittance percentage between the as-deposited film and the annealed films change varies from (17.0%) to (47.0%). It is clearly seen that there is a shift toward higher energy (Blue Shift) in the transmittance spectrum. As annealing temperature increased the transmittance edge is shifted to the longer wavelength (i.e., after annealing the CdSe films shows red shifts in their optical spectra). The band gap was found within the range 1.966-1.7536 eV for CdSe thin film. As annealing temperature increases, the Eg continuously decreases. Conclusions: CdSe thin films have been deposited using Physical Vapor Deposition (PVD) Technique. It is found that the transmission for as- deposited films is (17%) and increases to (47%) as annealing temperature increases. Beside this the energy gap for as- deposited CdSe film is (1.966eV) and decreased from (1.909 eV) to (1.7536eV) as the annealing temperature increases. There is a strong red shift in the optical spectrum of the annealed CdSe films. There is a gradual shift of the annealed films thin film spectra as compared of bulk CdSe films.

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