Reconstructing 2D and 3D X-ray Orientation Maps From White-Beam Laue

2014 ◽  
pp. 358-375 ◽  
Author(s):  
Jonathan Z. Tischler
Keyword(s):  
X Ray ◽  
White Beam ◽  
Orientation Maps ◽  
2D And 3D

scholarly journals X-ray diffraction analysis of matter taking into account the second harmonic in the scattering of powerful ultrashort pulses of an electromagnetic field

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. K. Eseev ◽  
A. A. Goshev ◽  
K. A. Makarova ◽  
D. N. Makarov
Keyword(s):  
Electromagnetic Field ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Second Harmonic ◽  
Ultrashort Pulses ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Spectra ◽  
Technical Possibility ◽  
2D And 3D

AbstractIt is well known that the scattering of ultrashort pulses (USPs) of an electromagnetic field in the X-ray frequency range can be used in diffraction analysis. When such USPs are scattered by various polyatomic objects, a diffraction pattern appears from which the structure of the object can be determined. Today, there is a technical possibility of creating powerful USP sources and the analysis of the scattering spectra of such pulses is a high-precision instrument for studying the structure of matter. As a rule, such scattering occurs at a frequency close to the carrier frequency of the incident USP. In this work, it is shown that for high-power USPs, where the magnetic component of USPs cannot be neglected, scattering at the second harmonic appears. The scattering of USPs by the second harmonic has a characteristic diffraction pattern which can be used to judge the structure of the scattering object; combining the scattering spectra at the first and second harmonics therefore greatly enhances the diffraction analysis of matter. Scattering spectra at the first and second harmonics are shown for various polyatomic objects: examples considered are 2D and 3D materials such as graphene, carbon nanotubes, and hybrid structures consisting of nanotubes. The theory developed in this work can be applied to various multivolume objects and is quite simple for X-ray structural analysis, because it is based on analytical expressions.

Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates

2015 ◽  
Vol 4 (8) ◽  
pp. P324-P330 ◽  
Author(s):  
L. Kirste ◽  
A. N. Danilewsky ◽  
T. Sochacki ◽  
K. Köhler ◽  
M. Zajac ◽  
...  
Keyword(s):  
Defect Structure ◽  
X Ray ◽  
White Beam ◽  
Topography Analysis

scholarly journals Doppler Tomography in 2D and 3D of the X-ray Binary Cyg X-1 for June 2007

2011 ◽  
Vol 7 (S282) ◽  
pp. 201-202 ◽  
Author(s):  
O. I. Sharova ◽  
M. I. Agafonov ◽  
E. A. Karitskaya ◽  
N. G. Bochkarev ◽  
S. V. Zharikov ◽  
...  
Keyword(s):  
Binary System ◽  
Spectral Data ◽  
Inclination Angle ◽  
Tomographic Reconstruction ◽  
Orbital Plane ◽  
National Observatory ◽  
Doppler Tomography ◽  
X Ray ◽  
2D And 3D ◽  
First Time

AbstractThe 2D and 3D Doppler tomograms of X-ray binary system Cyg X-1 (V1357 Cyg) were reconstructed from spectral data for the line HeII 4686Å obtained with 2-m telescope of the Peak Terskol Observatory (Russia) and 2.1-m telescope of the Mexican National Observatory in June, 2007. Information about gas motions outside the orbital plane, using all of the three velocity components Vx, Vy, Vz, was obtained for the first time. The tomographic reconstruction was carried out for the system inclination angle of 45°. The equal resolution (50 × 50 × 50 km/s) is realized in this case, in the orbital plane (Vx, Vy) and also in the perpendicular direction Vz. The checkout tomograms were realized also for the inclination angle of 40° because of the angle uncertainty. Two versions of the result showed no qualitative discrepancy. Details of the structures revealed by the 3D Doppler tomogram were analyzed.

Synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- and 6H-SiC seeds

2004 ◽  
Vol 831 ◽  
Author(s):  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Rafael Dalmau ◽  
Raoul Schlesser ◽  
Zlatko Sitar
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Large Diameter ◽  
Laser Diodes ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
X Ray ◽  
White Beam ◽  
Strain Data ◽  
Growth Experiments

ABSTRACTFor nitride based devices such as LEDs, high power FETs and laser diodes, single crystal substrates of AlN are highly desirable. While the sublimation technique is suitable for growing bulk AlN crystals, appropriate seeds are also necessary for growing large diameter oriented boules. 4H- and 6H-SiC substrates which are readily available commercially can potentially be implemented as seeds for bulk AlN growth. However, issues regarding SiC decomposition at high temperatures, thermal expansion mismatch, single crystal growth, etc. need to be addressed. Towards this end, a series of growth experiments have been carried out in a resistively heated reactor using on and off-axis 4H- and 6H-SiC substrates as seeds for AlN growth from the vapor phase. Several hundred microns thick AlN layers have been grown under different growth conditions. Synchrotron white beam x-ray topography (SWBXT) has been used to map the defect distribution in the grown layers and high resolution triple axis x-ray diffraction (HRTXD) experiments were carried out to record reciprocal space maps from which tilt, mismatch and strain data can be obtained. These results are analyzed with respect to the growth conditions in order to gain a better understanding of this growth process.

Synchrotron white beam x-ray topography characterization of structural defects in microgravity and ground-based CdZnTe crystals

1996 ◽  
Author(s):  
Hua Chung ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
David J. Larson, Jr.
Keyword(s):  
Structural Defects ◽  
X Ray ◽  
White Beam

Characterization of Defect Structures in 3C-SiC Single Crystals Using Synchrotron White Beam X-ray Topography

1996 ◽  
Vol 423 ◽  
Author(s):  
W. Huang ◽  
M. Dudley ◽  
C. Fazi
Keyword(s):  
Single Crystals ◽  
Stacking Faults ◽  
Interference Microscopy ◽  
Defect Structures ◽  
Growth Sector ◽  
X Ray ◽  
Partial Dislocations ◽  
White Beam ◽  
Transmission And Reflection

AbstractDefect structures in (111) 3C-SiC single crystals, grown using the Baikov technique, have been studied using Synchrotron White Beam X-ray Topography (SWBXT). The major types of defects include complex growth sector boundary structures, double positioning twins, stacking faults on { 111 } planes, inclusions and dislocations (including growth dislocations and partial dislocations bounding stacking faults). Detailed stacking fault and double positioning twin configurations are determined using a combination of Nomarski interference microscopy, SEM and white beam x-ray topography in both transmission and reflection geometries. Possible defect generation phenomena are discussed.

Extended SiC Defects: Polarized Light Microscopy Delineation and Synchrotron White-Beam X-Ray Topography Ratification

2003 ◽  
Vol 42 (Part 2, No.9A/B) ◽  
pp. L1077-L1079 ◽  
Author(s):  
Xianyun Ma ◽  
Michael Dudley ◽  
William Vetter ◽  
Tangali Sudarshan
Keyword(s):  
Light Microscopy ◽  
Polarized Light ◽  
Polarized Light Microscopy ◽  
X Ray ◽  
White Beam

Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography

1993 ◽  
Vol 307 ◽  
Author(s):  
S. Wang ◽  
M. Dudley ◽  
C. Carter ◽  
D. Asbury ◽  
C. Fazit
Keyword(s):  
Detailed Analysis ◽  
Single Crystals ◽  
Basal Plane ◽  
Defect Structures ◽  
Dislocation Generation ◽  
Screw Dislocations ◽  
X Ray ◽  
White Beam

ABSTRACTSynchrotron white beam X-ray topography has been used to characterize defect structures in 6H-SiC wafers grown on (0001) seeds. Two major types of defects are observed: super screw dislocations approximately perpendicular to the basal plane and dislocation networks lying in the basal plane. The super screw dislocations, which have open cores, are growth dislocations. These dislocations act as sources and/or sinks for the glide dislocation networks. Detailed analysis and discussion of dislocation generation phenomena and Burgers vectors will be presented.

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