QWIPs DESIGNED FOR HIGH ABSORPTION AND HIGH OPERATING TEMPERATURE

For the majority of applications involving detection of weak signals or thermal imaging, the quantum well infrared photodetector (QWIP) is designed to have the highest possible detectivity and operating temperature. The device parameters, such as the doping density, are chosen accordingly. In a different direction, the intrinsic short carrier lifetime (~ 5 ps) makes QWIPs well suited for high speed and high frequency applications. In such cases, since lasers are normally used, a high dark current can be tolerated. The most important parameter is then the absorption efficiency. For system simplicity and potential wide use, room temperature or near room temperature (reachable by thermo-electric cooling) operations are desirable. This paper discusses the QWIP design for high absorption and elevated temperature operation, and present a systematic experimental study on a set of GaAs/AlGaAs QWIPs with different doping densities. High absorption (~ 100%) and up to room temperature operation are achieved in devices having high doping densities and 100 quantum wells.

Download Full-text

Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation

Applied Physics Letters ◽

10.1063/1.1645662 ◽

2004 ◽

Vol 84 (6) ◽

pp. 840-842 ◽

Cited By ~ 35

Author(s):

S. G. Carter ◽

V. Ciulin ◽

M. S. Sherwin ◽

M. Hanson ◽

A. Huntington ◽

...

Keyword(s):

Quantum Wells ◽

Room Temperature ◽

Wavelength Conversion ◽

Electro Optic ◽

Room Temperature Operation

Download Full-text

Low-threshold room-temperature operation of injectorless quantum-cascade lasers: influence of doping density

Electronics Letters ◽

10.1049/el:20062702 ◽

2006 ◽

Vol 42 (21) ◽

pp. 1228 ◽

Cited By ~ 9

Author(s):

A. Friedrich ◽

C. Huber ◽

G. Boehm ◽

M.-C. Amann

Keyword(s):

Room Temperature ◽

Quantum Cascade Lasers ◽

Doping Density ◽

Quantum Cascade ◽

Low Threshold ◽

Cascade Lasers ◽

Room Temperature Operation

Download Full-text

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138713 ◽

1995 ◽

Vol 53 ◽

pp. 468-469

Author(s):

N. David Theodore ◽

Donald Y.C Lie ◽

J. H. Song ◽

Peter Crozier

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Integrated Circuit ◽

High Speed ◽

Room Temperature ◽

Strain Relaxation ◽

Bipolar Transistors ◽

Sige Hbt ◽

Integrated Circuit Manufacturing ◽

Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Download Full-text

Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽

10.1515/nanoph-2021-0007 ◽

2021 ◽

Vol 10 (6) ◽

pp. 1765-1773

Author(s):

Yi Zhang ◽

Jianfeng Gao ◽

Senbiao Qin ◽

Ming Cheng ◽

Kang Wang ◽

...

Keyword(s):

Energy Consumption ◽

Quantum Well ◽

Quantum Wells ◽

High Speed ◽

Low Voltage ◽

Extinction Ratio ◽

High Frequency Response ◽

Modulation Format ◽

Silicon Photonic ◽

Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

Download Full-text