CURRENT AND VOLTAGE SIMULATION OF AN ORGANIC INVERTER

2011 ◽  
Vol 20 (04) ◽  
pp. 843-851
Author(s):  
N. P. PAPADOPOULOS ◽  
A. A. HATZOPOULOS ◽  
A. MARSAL ◽  
J. PUIGDOLLERS ◽  
R. PICOS

Pentacene and N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) have been used as organic semiconductors for the fabrication of p -type and n -type organic thin-film transistors (OTFTs). Both types of semi-conductors are well-established and demonstrate good performance in singledevices, but few competitive results have been reported in complementary circuits. In this manuscript, we show the fabrication, electrical characterization and simulation of an organic complementary inverter using pentaceneand PTCDI-C13 as active semiconductors. Simulation was done using a model with physical aspects. The fitting of the parameters of the OTFT model is performed using an optimized parameter extraction technique which is using fuzzy logic to adjust the parameters to its optimal value. We also report good fitting of p -type and n -type parameters for the OTFT model and good results for DC transfer characteristics of the organic complementary inverter. In order to account for the presence of important parasitic elements, we show that the DC characteristics are best simulated using a transient analysis, instead of a DC.

Author(s):  
Houaida Becharguia ◽  
M. Mahdouani ◽  
R. Bourguiga

In this paper, we have study two types of thin-film organic transistors as well as the organic inverter. For manufacturing p-type and n-type organic thin film transistors (OTFT), pentacene and N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) were used as organic semiconductors. The organic thin film transistors showed excellent ambipolar operation. This ambipolar device is very useful in building flexible integrated circuits with easy design and low power consumption. The characterization and modeling of complementary thin film organic transistors allows us to describe one of its important applications which are the "inverter". In order to better understand the operation of inverters, an analytical model has been developed to describe the electrical behavior of both types of transistors and organic inverter. The model was carried out for transistors and organic inverters made experimentally. In this present work, we present the different electrical parameters resulting from the modeling for the two types of transistors and the organic inverter wich based on the complementary OTFTs.


2015 ◽  
Vol 3 (3) ◽  
pp. 506-513 ◽  
Author(s):  
Marta Reig ◽  
Joaquim Puigdollers ◽  
Dolores Velasco

Correlation of the OTFT performance with the molecular order in the semiconductor layers as a function of the extension of the π-conjugated core of a series of carbazole-based organic semiconductors.


Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 3
Author(s):  
Marco Roberto Cavallari ◽  
Loren Mora Pastrana ◽  
Carlos Daniel Flecha Sosa ◽  
Alejandra Maria Rodriguez Marquina ◽  
José Enrique Eirez Izquierdo ◽  
...  

Organic thin-film transistors (OTFTs) are miniaturized devices based upon the electronic responses of organic semiconductors. In comparison to their conventional inorganic counterparts, organic semiconductors are cheaper, can undergo reversible doping processes and may have electronic properties chiefly modulated by molecular engineering approaches. More recently, OTFTs have been designed as gas sensor devices, displaying remarkable performance for the detection of important target analytes, such as ammonia, nitrogen dioxide, hydrogen sulfide and volatile organic compounds (VOCs). The present manuscript provides a comprehensive review on the working principle of OTFTs for gas sensing, with concise descriptions of devices’ architectures and parameter extraction based upon a constant charge carrier mobility model. Then, it moves on with methods of device fabrication and physicochemical descriptions of the main organic semiconductors recently applied to gas sensors (i.e., since 2015 but emphasizing even more recent results). Finally, it describes the achievements of OTFTs in the detection of important gas pollutants alongside an outlook toward the future of this exciting technology.


2018 ◽  
Vol 9 (12) ◽  
pp. 1397-1403 ◽  
Author(s):  
Ethan R. Sauvé ◽  
Christopher M. Tonge ◽  
Nathan R. Paisley ◽  
Susan Cheng ◽  
Zachary M. Hudson

A series of four acrylic monomers were synthesized based on p-type organic semiconductor motifs found commonly in organic light-emitting diodes (OLEDs), organic thin-film transistors (OTFTs) and organic photovoltaics (OPVs).


2006 ◽  
Vol 965 ◽  
Author(s):  
Antonio Facchetti ◽  
Choongik Kim ◽  
Myung-han Yoon ◽  
Tobin J Marks

ABSTRACTOrganic semiconductors exhibiting p-, n-type, or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers / HMDS on 300 nm SiO2/p+-Si, and are characterized by AFM, SEM, and WAXRD, followed by field-effect transistor (FET) electrical characterization. It is observed that in case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. This study provides key information on the chemical origin of the charge trapping sites at the FET dielectric-semiconductor interface. In parallel, bottom-contact FETs of n-type oligothiophenes were investigated by a combination of microscopy/electrical measurements and new insights for the poor electron injection efficiency from the Au contacts are presented


2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...


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