Interfacial Phenomena Affecting Charge Transport In Small Molecule Organic Thin-Film Transistors

2006 ◽  
Vol 965 ◽  
Author(s):  
Antonio Facchetti ◽  
Choongik Kim ◽  
Myung-han Yoon ◽  
Tobin J Marks
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Electrical Characterization ◽  
Charge Trapping ◽  
Surface Modifications ◽  
Dielectric Surface ◽  
Organic Thin Film ◽  
Electrical Measurements ◽  
Semiconductor Interface ◽  
P Type

ABSTRACTOrganic semiconductors exhibiting p-, n-type, or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers / HMDS on 300 nm SiO2/p+-Si, and are characterized by AFM, SEM, and WAXRD, followed by field-effect transistor (FET) electrical characterization. It is observed that in case of air-sensitive n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. This study provides key information on the chemical origin of the charge trapping sites at the FET dielectric-semiconductor interface. In parallel, bottom-contact FETs of n-type oligothiophenes were investigated by a combination of microscopy/electrical measurements and new insights for the poor electron injection efficiency from the Au contacts are presented

CURRENT AND VOLTAGE SIMULATION OF AN ORGANIC INVERTER

2011 ◽  
Vol 20 (04) ◽  
pp. 843-851
Author(s):  
N. P. PAPADOPOULOS ◽  
A. A. HATZOPOULOS ◽  
A. MARSAL ◽  
J. PUIGDOLLERS ◽  
R. PICOS
Keyword(s):  
Organic Semiconductors ◽  
Transient Analysis ◽  
Electrical Characterization ◽  
Parameter Extraction ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Dc Characteristics ◽  
Optimal Value ◽  
P Type ◽  
Organic Inverter

Pentacene and N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) have been used as organic semiconductors for the fabrication of p -type and n -type organic thin-film transistors (OTFTs). Both types of semi-conductors are well-established and demonstrate good performance in singledevices, but few competitive results have been reported in complementary circuits. In this manuscript, we show the fabrication, electrical characterization and simulation of an organic complementary inverter using pentaceneand PTCDI-C13 as active semiconductors. Simulation was done using a model with physical aspects. The fitting of the parameters of the OTFT model is performed using an optimized parameter extraction technique which is using fuzzy logic to adjust the parameters to its optimal value. We also report good fitting of p -type and n -type parameters for the OTFT model and good results for DC transfer characteristics of the organic complementary inverter. In order to account for the presence of important parasitic elements, we show that the DC characteristics are best simulated using a transient analysis, instead of a DC.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Real-time monitoring of trap dynamics reveals the electronic states that limit charge transport in crystalline organic semiconductors

2020 ◽  
Vol 7 (9) ◽  
pp. 2390-2398
Author(s):  
Hamna F. Iqbal ◽  
Emma K. Holland ◽  
John E. Anthony ◽  
Oana D. Jurchescu
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Real Time ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
Electronic States ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Real Time Monitoring

Access to the dynamics of trap annihilation/generation resulting from isomer rearrangement identifies the performance-limiting processes in organic thin-film transistors.

scholarly journals Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

2017 ◽  
Vol 897 ◽  
pp. 63-66
Author(s):  
Selsabil Sejil ◽  
Loic Lalouat ◽  
Mihai Lazar ◽  
Davy Carole ◽  
Christian Brylinski ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Electrical Measurements ◽  
Pin Diodes ◽  
Low Leakage ◽  
Forward Current ◽  
Low Leakage Current ◽  
Current Densities ◽  
P Type ◽  
Electrical Characterizations ◽  
Very High

This study deals with the electrical characterization of PiN diodes fabricated on a 4°off-axis 4H-SiC n+ substrate with a n- epilayer (1×1016 cm-3 / 10 µm). Optimized p++ epitaxial areas were grown by Vapour-Liquid-Solid (VLS) transport to form p+ emitters localized in etched wells with 1 µm depth. Incorporated Al level in the VLS p++ zones was checked by SIMS (Secondary Ion Mass Spectroscopy), and the doping level was found in the range of 1-3×1020 at.cm-3. Electrical characterizations were performed on these PiN diodes, with 800 nm deposit of aluminium as ohmic contact on p-type SiC. Electrical measurements show a bipolar behaviour, and very high sustainable forward current densities ≥ 3 kA.cm-2, preserving a low leakage current density in reverse bias. These measurements were obtained on structures without any passivation and no edge termination.

Fullerene Based n-type Organic Thin-Film Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
Joshua Haddock ◽  
Benoit Domercq ◽  
Bernard Kippelen
Keyword(s):  
Organic Semiconductors ◽  
Field Effect Transistors ◽  
High Vacuum ◽  
Channel Length ◽  
Organic Films ◽  
Limiting Factor ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
P Type ◽  
Made In

AbstractSignificant progress has been made in the area of p-type organic field effect transistors while progress in developing n-type materials and devices has been comparatively lacking, a limiting factor in the pursuit to develop complementary organic electronic circuits. Given the need for n-type organic semiconductors we have carried out studies using two different fullerene molecules, C60 and C70. Here, we report mobilities for C60 ranging from 0.02 cm2/Vs up to 0.65 cm2/Vs (depending on channel length), and mobilities from 0.003 cm2/Vs up to 0.066 cm2/Vs for C70. All devices were fabricated with organic films deposited under high vacuum but tested at ambient pressures under nitrogen.

scholarly journals Molecular order of air-stable p-type organic thin-film transistors by tuning the extension of the π-conjugated core: the cases of indolo[3,2-b]carbazole and triindole semiconductors

2015 ◽  
Vol 3 (3) ◽  
pp. 506-513 ◽  
Author(s):  
Marta Reig ◽  
Joaquim Puigdollers ◽  
Dolores Velasco
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Molecular Order ◽  
P Type

Correlation of the OTFT performance with the molecular order in the semiconductor layers as a function of the extension of the π-conjugated core of a series of carbazole-based organic semiconductors.

scholarly journals Naphthalimide end capped anthraquinone based solution-processable n-channel organic semiconductors: effect of alkyl chain engineering on charge transport

2018 ◽  
Vol 6 (14) ◽  
pp. 3774-3786 ◽  
Author(s):  
Thu-Trang Do ◽  
Yasunori Takeda ◽  
Sergei Manzhos ◽  
John Bell ◽  
Shizuo Tokito ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Small Molecules ◽  
Chain Length ◽  
Organic Semiconductors ◽  
Alkyl Chain ◽  
Thin Film Transistor ◽  
Alkyl Chain Length ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

A series of electron deficient small molecules using fused anthraquinone and naphthalimide conjugated backbone with different alkyl chain length with lower LUMO for n-channel organic thin film transistor.

scholarly journals Origin of the p-type characteristics of organic semiconductors

2021 ◽  
Author(s):  
Wenping Hu ◽  
Liqiang Li ◽  
Yinan Huang ◽  
Xiaosong Chen ◽  
Kunjie Wu ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Electronics ◽  
Room Temperature ◽  
Radical Cations ◽  
Organic Radical ◽  
Complete Disappearance ◽  
Core Technology ◽  
Property Space ◽  
P Type

Abstract Organic semiconductors (OSC) are generally considered intrinsic (undoped), an assumption which underpins our understanding of the charge transport in this promising class of materials. However, this premise conflicts with a variety of experimental observations, that suggest the presence of excess holes carriers in OSCs at room temperature. Here, using a low-power plasma de-doping method, we report that trace amounts (~1015 cm-3) of oxygen-induced organic radical cations (OIORCs) are inherent in the lattice of OSCs as innate hole carriers, and that this is the origin of the p-type characteristics exhibited by the majority of these materials. This finding clarifies previously unexplained organic electronics phenomena and provides a foundation upon which to re-understand charge transport in OSCs. Furthermore, the de-doping method can eliminate the trace OIORCs, resulting in the complete disappearance of p-type behavior, while re-doping (under light irradiation in O2), reverses the process. These methods can precisely modulate key electronic characteristics (e.g., conductivity, polarity, and threshold voltage) in a nondestructive way, expanding the explorable charge transport property space for all known OSC materials. Accordingly, we conclude that our tailorable OIORC doping strategy, requiring only off-the-shelf equipment and a glovebox, will become a core technology in the burgeoning organic electronics industry.

scholarly journals Study and Analysis of Simple and Precise of Contact Resistance Single-Transistor Extracting Method for Accurate Analytical Modeling of OTFTs Current-Voltage Characteristics: Application to Different Organic Semiconductors

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1448
Author(s):  
Noweir Ahmad Alghamdi
Keyword(s):  
Contact Resistance ◽  
Organic Semiconductors ◽  
Practical Method ◽  
Organic Thin Film ◽  
Current Voltage ◽  
Organic Semiconductor Materials ◽  
Current Voltage Characteristics ◽  
Output Characteristics ◽  
P Type ◽  
Transition Voltage

Contact resistance (Rc) characterizes the interface of source-drain electrodes/organic semiconductors and controls the injection efficiency of carriers in organic thin-film transistors (OTFTs). This research paper presents and assesses two methods for extracting the value of the contact resistance from the measured current-voltage characteristics of OTFTs made with various p-type organic semiconductors as active layers. These two methods are the transition voltage method (TVM) and the transfer line method (TLM). The obtained Rc values by the TVM method are in fair agreement with those obtained by TLM, with a maximum percentage of difference around 10%, demonstrating the accuracy of the used transition-voltage method. An analytical model was employed to calculate output characteristics in the linear regime of OTFTs made with various organic semiconductors using the contact resistance values obtained by the transition voltage method. The calculated results are in reasonably good agreement with the experimental ones of each fabricated device, which affirms the ability of the used model to characterize the charge transport correctly in these types of devices. It can be concluded that the used TVM method is not only an easy and practical method, but also a precise way for extracting Rc in OTFTs produced using different organic semiconductor materials.

Cu(0)-RDRP of acrylates based on p-type organic semiconductors

2018 ◽  
Vol 9 (12) ◽  
pp. 1397-1403 ◽  
Author(s):  
Ethan R. Sauvé ◽  
Christopher M. Tonge ◽  
Nathan R. Paisley ◽  
Susan Cheng ◽  
Zachary M. Hudson
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Light Emitting Diodes ◽  
Organic Thin Film ◽  
Light Emitting ◽  
Organic Light ◽  
Acrylic Monomers ◽  
P Type

A series of four acrylic monomers were synthesized based on p-type organic semiconductor motifs found commonly in organic light-emitting diodes (OLEDs), organic thin-film transistors (OTFTs) and organic photovoltaics (OPVs).

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