PLASMA ETCHING PROCESSES FOR GIGAHERTZ SILICON INTEGRATED CIRCUITS (Part 2)

1991 ◽  
Vol 02 (01n02) ◽  
pp. 45-88 ◽  
Author(s):  
A.M. VOSHCHENKOV
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Historical Perspective ◽  
Original Work ◽  
Preceding Paper ◽  
Chemical Processing ◽  
Silicon Technology ◽  
Silicon Integrated Circuits ◽  
Wet Chemical ◽  
Basic Characteristics

In the preceding paper of this series, “Fundamentals of plasma etching for silicon technology (Part 1)”,1 a historical perspective of the evolution of plasma etching, its relationship to lithography needs, basic characteristics of plasma etching, advantages over wet chemical processing, and a practical viewpoint of the underlying fundamental concepts of plasma physics and chemistry were presented. In this paper, original work in plasma etcher design and a variety of process applications to multigigahertz rate silicon technology as practiced in Bell Laboratories, Holmdel, are described.

FUNDAMENTALS OF PLASMA ETCHING FOR SILICON TECHNOLOGY (PART 1)

1990 ◽  
Vol 01 (03n04) ◽  
pp. 303-345 ◽  
Author(s):  
ALEXANDER M. VOSHCHENKOV
Keyword(s):  
Plasma Etching ◽  
Technology Development ◽  
Rapid Evolution ◽  
Building Blocks ◽  
Semiconductor Technology ◽  
Silicon Technology ◽  
Wet Chemical ◽  
Basic Characteristics ◽  
Relationship Of ◽  
The Relationship

Over the past decade, as the rapid evolution of semiconductor technology has progressed towards submicron design rules, plasma (dry) etching has supplanted simple wet etching processes for the transfer of patterns. To understand the underlying need for development of plasma etching, a brief background of integrated semiconductor technology is presented. Along with a historical perspective of the evolution of plasma etching, the relationship of plasma etching to lithography needs, its basic characteristics and advantages over wet chemical processing are discussed. Following this, relevant concepts of plasma physics and chemistry, based on experience with plasma etching applications for silicon technology, which can be used as building blocks for technology development are described.

Using the secondary electrons (SE) of SEM with NIST‘s MONSEL-II program to obtain improved linewidth measurements and slope angles of line edges on a MMIC GaAs device

1996 ◽  
Vol 54 ◽  
pp. 944-945
Author(s):  
Richard G. Sartore
Keyword(s):  
Integrated Circuits ◽  
Plasma Etching ◽  
Microwave Integrated Circuits ◽  
Monolithic Microwave Integrated Circuits ◽  
Thick Gold ◽  
Gaas Devices ◽  
Source Distance ◽  
Margin Of Error ◽  
Dimensional Measurements ◽  
Barrier Metal

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.

Electrical Invasiveness of Grinding and Polishing Silicon Integrated Circuits Down to 1 μm Remaining Silicon Thickness

2016 ◽  
Author(s):  
Robert Chivas ◽  
Scott Silverman ◽  
Michael DiBattista ◽  
Ulrike Kindereit
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Electron Hole ◽  
Analysis Techniques ◽  
Silicon Integrated Circuits ◽  
Electron Hole Pair ◽  
Pair Generation ◽  
Silicon Thickness ◽  
Performance Timing ◽  
Grinding And Polishing

Abstract Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. When the remaining silicon is reduced, some redistribution of stress is expected, possibly altering the performance (timing) of integrated circuits in addition to electron-hole pair generation. In this work, a study of the electrical invasiveness due to grinding and polishing silicon integrated circuits to ultra-thin (< 5 um global, ~ 1 um local) remaining thickness is presented.

Ion-Assisted Surface Processing of Electronic Materials

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 52-57 ◽  
Author(s):  
S.T. Picraux ◽  
E. Chason ◽  
T.M. Mayer
Keyword(s):  
Plasma Etching ◽  
Electronic Materials ◽  
Low Energy ◽  
Surface Processing ◽  
Wave Guides ◽  
Side Walls ◽  
Wet Chemical ◽  
Low Energy Ions ◽  
Metal Layers ◽  
Defect Densities

Why are low-energy ions relevant to the surface processing of electronic materials? The answer lies in the overriding trend of miniaturization in microelectronics. The achievement of these feats in ultrasmall architecture has required surface processing capabilities that allow layer addition and removal with incredible precision. The resulting benefits of greater capacity and speed at a plummeting cost per function are near legendary.The ability of low-energy ions to enhance the precision of surface etching, cleaning, and deposition/growth processes (Figure 1) provides one basis for the interest in ion-assisted processes. Low-energy ions are used, for example, to enhance the sharpness of side walls in plasma etching and to improve step coverage by metal layers in sputter deposition. Emerging optoelectronic applications such as forming ridges for wave-guides and ultrasmooth vertical surfaces for lasers further extend piesent requirements, and low-energy ions again provide one tool to help in this area of ultraprecise materials control. Trends associated with the decreased feature size include the movement from wet chemical processing to dry processing, the continuing need for reductions in defect densities, and the drive toward reduced temperatures and times in process steps.How do the above trends focus interest on studies of low-energy ion-assisted processes? In current applications, these trends are driving the need for increased atomic-level understanding of the ion-enhancement mechanisms, for example, in reactive ion etching to minimize defect production and enhance surface chemical reactions.

Thermodynamical Calculations and Experimental Confirmation about the Mg-Al-Spinel Reaction Path in the Sol-Gel-Process

2006 ◽  
Vol 317-318 ◽  
pp. 135-138 ◽  
Author(s):  
Wilfried Wunderlich ◽  
Krupathi Vishista ◽  
Francis D. Gnanam ◽  
Daniel Doni Jayaseelan
Keyword(s):  
Thermal Analysis ◽  
Reaction Path ◽  
Sol Gel ◽  
Chemical Processing ◽  
Aluminium Isopropoxide ◽  
Spinel Formation ◽  
Sol Gel Process ◽  
Wet Chemical ◽  
Enthalpy Data ◽  
Good Agreement

The aim of this research is, to clarify which route the sol-gel-process is taking in the case of a Al-Mg-spinel slurry, in particular, whether the hydrolysis reaction or the spinel formation is faster and which of the intermediate hydroxide phases Al(OH)3, and Mg(OH)2, or MgO and Al2O3 or MgAl2O4H2O are formed during the spinel formation. The spinel-alloy was produced using the polymeric route during wet chemical processing. Aluminium-isopropoxide was hydrolyzed in order to form the boehmite-sol and then the same amount of magnesia was added and mixed. This sol precipitated as boehmite (AlOOH) and brucite (Mg(OH)2) after ageing for 12h as confirmed by differential thermal analysis (DTA), and differential thermal gravity (DTG) measurements. After that, the powders were subsequently annealed at 900oC for 3h in air and observed by TEM. Calculations using thermodynamic enthalpy data are in good agreement with the experiments and can be used to predict reaction paths in other system as well.

scholarly journals Wet Chemical and Plasma Etching

2016 ◽  
pp. 209-240
Author(s):  
Andrew Sarangan
Keyword(s):  
Plasma Etching ◽  
Wet Chemical
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