Gallium Nitride Based Semiconductors for Short Wavelength Optoelectronics

1997 ◽  
Vol 08 (02) ◽  
pp. 265-282
Author(s):  
S. P. Denbaars
Keyword(s):  
Room Temperature ◽  
High Efficiency ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Properties ◽  
Full Color ◽  
Color Spectrum ◽  
First Time ◽  
Room Temperature Operation

In this article we review the key technologies for GaN based materials and devices. Developments in the methods for thin film deposition by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) and resulting film properties are highlighted. Breakthroughs in materials growth has enabled extremely high efficiency blue and green GaN LEDs to be achieved for the first time. GaN LEDs complete the primary color spectrum and have enabled bright and reliable full-color solid state displays to be realized. Recently, room temperature operation of pulsed current injection blue-violet lasers emitting at 417 nm has further increased possible applications for GaN based optoelectronic devices.

scholarly journals Tin guanidinato complexes: oxidative control of Sn, SnS, SnSe and SnTe thin film deposition

2018 ◽  
Vol 47 (14) ◽  
pp. 5031-5048 ◽  
Author(s):  
Ibrahim Y. Ahmet ◽  
Michael S. Hill ◽  
Paul R. Raithby ◽  
Andrew L. Johnson
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Semiconductor Materials ◽  
Phase Pure ◽  
Chalcogenide Thin Films ◽  
First Time ◽  
Pure Sn

SnS, SnSe and SnTe are potentially important semiconductor materials. We report for the first time the oxidative controlled Aerosol assisted chemical vapor deposition (AA-CVD) of phase pure Sn(ii) chalcogenide thin films, using chalcogenide Sn(iv) guanidinate precursors, containing SnCh bonds (Ch = S, Se and Te).

Developing Monolithically Integrated CdTe Devices Deposited by AP-MOCVD

2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Aluminosilicate Glass ◽  
Organic Chemical ◽  
Large Area ◽  
Monolithically Integrated ◽  
Glass Substrates ◽  
Laser Scribing

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.

Room-temperature conversion of the photoelectrochemical oxidation of methane into electricity at nanostructured TiO2

2021 ◽  
Vol 5 (1) ◽  
pp. 127-134
Author(s):  
Yanir Kadosh ◽  
Eli Korin ◽  
Armand Bettelheim
Keyword(s):  
Fuel Cell ◽  
Room Temperature ◽  
Nanotube Arrays ◽  
Nanostructured Tio2 ◽  
Oxidation Of Methane ◽  
Photoelectrochemical Oxidation ◽  
First Time ◽  
Room Temperature Operation

The room-temperature operation of a methane-based photo-fuel cell is demonstrated for the first time. This is achieved using a TiO2 nanotube arrays photoanode which shows effective oxidation of methane.

Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n+, and p+ amorphous silicon thin films

2013 ◽  
Vol 1536 ◽  
pp. 133-138
Author(s):  
I-Syuan Lee ◽  
Yue Kuo
Keyword(s):  
Deposition Rate ◽  
Gas Flow ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Critical Factor ◽  
Optical Emission ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Silicon Thin Films ◽  
Deposition Processes

ABSTRACTThe PECVD intrinsic, n+, and p+ a-Si:H thin film deposition processes have been studied by the optical emission spectroscope to monitor the plasma phase chemistry. Process parameters, such as the plasma power, pressure, and gas flow rate, were correlated to SiH*, Hα*, and Hβ* optical intensities. For all films, the deposition rate increases with the increase of the SiH* intensity. For the doped films, the Hα*/SiH* ratio is a critical factor affecting the resistivity. The existence of PH3 or B2H6 in the feed stream enhances the deposition rate. Changes of the free radicals intensities can be used to explain variation of film characteristics under different deposition conditions.

scholarly journals Lead-free, stable, high-efficiency (52%) blue luminescent FA3Bi2Br9 perovskite quantum dots

2020 ◽  
Vol 5 (3) ◽  
pp. 580-585 ◽  
Author(s):  
Yalong Shen ◽  
Jun Yin ◽  
Bo Cai ◽  
Ziming Wang ◽  
Yuhang Dong ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Yield ◽  
Room Temperature ◽  
High Efficiency ◽  
Blue Emission ◽  
Lead Free ◽  
Photoluminescence Quantum Yield ◽  
Perovskite Quantum Dots ◽  
First Time

Lead-free Bi-based perovskite FA3Bi2X9 (X = Cl, Br, and I) quantum dots (QDs) are synthesized for the first time at room temperature. The ligand-passivated FA3Bi2Br9 QDs exhibit blue emission at 437 nm with photoluminescence quantum yield (PLQY) up to 52%.

Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors

1999 ◽  
Vol 573 ◽  
Author(s):  
J. Etrillard ◽  
H. Maher ◽  
M. Medjdoub ◽  
J. L. Courant ◽  
Y. I. Nissim
Keyword(s):  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Point Of View ◽  
Etch Depth ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Inductively Coupled ◽  
Device Processing

ABSTRACTThe use of a low ion energy of an extremely dense plasma has been studied as a dry etching as well as a thin film deposition tool (same source, two different reactors) for InP and GaAs device processing. Under these working conditions it is expected to control well the etch depth or in the case of deposition to obtain high deposition rates. In all cases minimun ion damages are induced on the processed substrate. Both technologies are presented here from the point of view of material analysis as well as device processing demonstration. For etching, the gate recess of an InP-based HEMT has been addressed as one of the key technological step that requires such properties for good device performances. InGaAs/InAlAs HEMT like structures have been grown and the recess of the InGaAs layer has been conducted with a 13eV SiCl4 inductively coupled plasma (ICP). DLTS and AFM measurements made on the exposed AlinAs surface after InGaAs removal indicate that device quality on its electrical and structural properties are achieved. Passivation of fully processed HEMT devices with a ICP enhanced chemical vapor deposition (ICPECVD) silicon nitride film is being studied.

Heat Transport in Superlattices and Nanocomposites for Thermoelectric Applications

2006 ◽  
Vol 46 ◽  
pp. 104-110 ◽  
Author(s):  
Gang Chen
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Large Scale ◽  
Energy Transport ◽  
High Efficiency ◽  
Waste Heat ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

Energy transport in nanostructures differs significantly from macrostructures because of classical and quantum size effects on energy carriers. Experimental results show that the thermal conductivity values of nanostructures such as superlattices are significantly lower than that of their bulk constituent materials. The reduction in thermal conductivity led to a large increase in the thermoelectric figure of merit in several superlattice systems. Materials with a large thermoelectric figure of merit can be used to develop efficient solid-state devices that convert waste heat into electricity. Superlattices grown by thin-film deposition techniques, however, are not suitable for large scale applications. Nanocomposites represent one approach that can lead to high thermoelectric figure merit. This paper reviews the current understanding of thermal conductivity reduction mechanisms in superlattices and presents theoretical studies on thermoelectric properties in semiconducting nanocomposites, aiming at developing high efficiency thermoelectric energy conversion materials.

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