HETERO-GROWTH OF (100) ORIENTATED ZNO FILMS ON SILICON BY SS-CVD

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4250-4254 ◽  
Author(s):  
JIAN-GUO LU ◽  
ZHI-ZHEN YE ◽  
HAN-HONG CHEN ◽  
JING-YUN HUANG ◽  
BING-HUI ZHAO
Keyword(s):  
Texture Coefficient ◽  
Zinc Acetate Dihydrate ◽  
Chemical Vapor ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Lower Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
First Time ◽  
Lower Growth Temperature

ZnO films with (100) preferred orientation are reported for the first time. ZnO films were synthesized on Si(100) substrate by solid-source chemical vapor deposition (SS-CVD) using zinc acetate dihydrate (solid) as a precursor. The structural properties were investigated by X-ray diffraction and atomic force microscopy. Results show that a lower growth temperature and a higher deposition rate will facilitate the formation of (100) texture. The texture coefficient for (100) plane is 3.28.

Epitaxial Growth of Single Crystalline Ge Films on GaAs Substrates for CMOS Device Integration

2008 ◽  
Vol 1068 ◽  
Author(s):  
Hock-Chun Chin ◽  
Ming Zhu ◽  
Ganesh Samudra ◽  
Yee-Chia Yeo
Keyword(s):  
High Resolution ◽  
Epitaxial Growth ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Gate Stack ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
First Time

ABSTRACTWe report a novel chemical vapor deposition (CVD) process for epitaxial growth of Ge film on GaAs substrate. The resultant layer exhibits device level quality, as shown by high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, high-resolution X-ray diffraction (HRXRD). In addition, atomic force microscopy (AFM) scanning indicates low RMS surface roughness of 5 Å. Secondary ion mass spectrometry (SIMS) reveals negligible out-diffusion of Ga and As into the Ge epilayer. By employing silane passivation, Ge p-MOSFET with TaN/HfO2 gate stack was fabricated on Ge/GaAs heterostructure for the first time, showing excellent output and pinch-off characteristics. A GaAs channel n-MOSFET was also fabricated, using similar SiH4 treatment during gate stack formation. These results reveal a potential solution to integrate Ge p-channel and GaAs n-channel MOSFET for advanced CMOS applications.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Growth of (0001) ZnO Thin Films on Sapphire

1996 ◽  
Vol 449 ◽  
Author(s):  
A. J. Drehman ◽  
P. W. Yip
Keyword(s):  
Surface Roughness ◽  
Buffer Layers ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force

ABSTRACTUsing reactive rf sputtering, we have grown (0001) oriented ZnO films in situ on heated c-axis sapphire substrates, that are promising, particularly in terms of surface roughness, as buffer layers for the subsequent epitaxial growth of III-V nitride films. We compare the effects of on-axis and off-axis sputter geometries on the film epitaxy and smoothness. We also examined the effect of substrate temperature on the growth and smoothness and quality of the film. X-ray diffraction was used to verify the hexagonal ZnO phase, its c-axis orientation and, qualitatively, the degree of its epitaxy. Atomic Force Microscopy (AFM) was used to determine the ZnO growth morphology and roughness. Our best films, obtained by off-axis sputter deposition, have a surface roughness of less than 1 nm.

Influence of Ammonia on the Fabrication of Aligned Carbon Nanotubes Using Thermal CVD

2011 ◽  
Vol 467-469 ◽  
pp. 312-315
Author(s):  
Gang Li ◽  
Wen Ming Cheng
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Vertical Alignment ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Aligned Carbon Nanotubes ◽  
20 Nm

Ultra-thin (20 nm) nickel catalyst films were deposited by sputtering on SiO2/Si substrates. At the pretreatments, ammonia (NH3) was conducted for different time in a thermal chemical vapor deposition (CVD) system. Pretreated samples were characterized using atomic force microscopy (AFM). After the pretreatment, acetylene was introduced into the chamber for 10 min, samples were characterized using scanning electron micrograph (SEM) and X-ray diffraction (XRD). It was concluded that NH3 pretreatment was very crucial to control the surface morphology of catalytic metals and thus to achieve the vertical alignment of carbon nanotubes (CNTs). With higher density of the Ni particles, better alignment of the CNTs can be obtained due to steric hindrance effect between neighboring CNTs.

Growth of Diamond Films Using C3F8AND H2in A New System

1994 ◽  
Vol 349 ◽  
Author(s):  
Ping Huangfu ◽  
Zengsun Jin ◽  
Xianyi Lu ◽  
Guangtian Zou ◽  
Huaxian Xiao ◽  
...  
Keyword(s):  
Synthetic Diamond ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
Surface Pretreatment ◽  
Force Microscopy ◽  
Atomic Force ◽  
Single Crystal Diamond ◽  
New System

ABSTRACTIn the present study, the new system used C3F8and H2 as source gases. Filament-assisted chemical vapor deposition was utilized. Continuous diamond films were grown on the Si and Mo substrates without any surface pretreatment. The results of scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and atomic force microscopy measurements indicate that the films deposited on the Mo substrates are of high quality. Homoepitaxial diamond films were grown on the high pressure synthetic single crystal diamond substrates. The results show that in our experimental conditions epitaxial films were easily grown on the (111) synthetic diamond substrates and sometimes epitaxial filmse also grown on the (100) synthetic diamond substrates.

scholarly journals Synthesis of ultrasmooth nanostructured diamond films by microwave plasma chemical vapor deposition using a He/H2/CH4/N2gas mixture

2006 ◽  
Vol 21 (10) ◽  
pp. 2675-2682 ◽  
Author(s):  
S. Chowdhury ◽  
Damon A. Hillman ◽  
Shane A. Catledge ◽  
Valery V. Konovalov ◽  
Yogesh K. Vohra
Keyword(s):  
Gas Flow ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Optical Emission ◽  
X Ray Diffraction ◽  
Plasma Chemical Vapor Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gas Flow Ratio

Ultrasmooth nanostructured diamond (USND) films were synthesized on Ti–6Al–4V medical grade substrates by adding helium in H2/CH4/N2plasma and changing the N2/CH4gas flow from 0 to 0.6. We were able to deposit diamond films as smooth as 6 nm (root-mean-square), as measured by an atomic force microscopy (AFM) scan area of 2 μm2. Grain size was 4–5 nm at 71% He in (H2+ He) and N2/CH4gas flow ratio of 0.4 without deteriorating the hardness (∼50–60 GPa). The characterization of the films was performed with AFM, scanning electron microscopy, x-ray diffraction (XRD), Raman spectroscopy, and nanoindentation techniques. XRD and Raman results showed the nanocrystalline nature of the diamond films. The plasma species during deposition were monitored by optical emission spectroscopy. With increasing N2/CH4feedgas ratio (CH4was fixed) in He/H2/CH4/N2plasma, a substantial increase of CN radical (normalized by Balmer Hαline) was observed along with a drop in surface roughness up to a critical N2/CH4ratio of 0.4. The CN radical concentration in the plasma was thus correlated to the formation of ultrasmooth nanostructured diamond films.

scholarly journals Characterization and Evaluation of Layered Bi2WO6 Nanosheets as a New Antibacterial Agent

Antibiotics ◽  
2021 ◽  
Vol 10 (9) ◽  
pp. 1068
Author(s):  
Maria Karollyna do Nascimento Silva Leandro ◽  
João Victor Barbosa Moura ◽  
Paulo de Tarso Cavalcante Freire ◽  
Maria Leticia Vega ◽  
Cleânio da Luz Lima ◽  
...  
Keyword(s):  
Antibacterial Activity ◽  
Visible Light ◽  
X Ray Diffraction ◽  
Mortality And Morbidity ◽  
Force Microscopy ◽  
Microdilution Method ◽  
Atomic Force ◽  
Good Potential ◽  
Resistant Strains ◽  
First Time

Background: Pathogenic microorganisms are causing increasing cases of mortality and morbidity, along with alarming rates of ineffectiveness as a result of acquired antimicrobial resistance. Bi2WO6 showed good potential to be used as an antibacterial substance when exposed to visible light. This study demonstrates for the first time the dimension-dependent antibacterial activity of layered Bi2WO6 nanosheets. Materials and methods: The synthesized layered Bi2WO6 nanosheets were prepared by the hydrothermal method and characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Raman and Fourier transform infrared spectroscopy (FTIR). Antibacterial and antibiotic-modulation activities were performed in triplicate by the microdilution method associated with visible light irradiation (LEDs). Results: Bi2WO6 nanosheets were effective against all types of bacteria tested, with MIC values of 256 μg/mL against Escherichia coli standard and resistant strains, and 256 μg/mL and 32 μg/mL against Staphylococcus aureus standard and resistant strains, respectively. Two-dimensional (2D) Bi2WO6 nanosheets showed antibacterial efficiency against both strains studied without the presence of light. Conclusions: Layered Bi2WO6 nanosheets revealed dimension-dependent antibacterial activity of the Bi2WO6 system.

Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 201-204 ◽  
Author(s):  
Christian Förster ◽  
Volker Cimalla ◽  
Oliver Ambacher ◽  
Jörg Pezoldt
Keyword(s):  
Gas Phase ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

In the present work an UHVCVD method was developed which allows the epitaxial growth of 3C-SiC on Si substrates at temperatures below 1000°C. The developed method enable the growth of low stress or nearly stress free single crystalline 3C-SiC layers on Si. The influence of hydrogen on the growth process are be discussed. The structural properties of the 3C-SiC(100) layers were studied with reflection high-energy diffraction, atomic force microscopy, X-ray diffraction and the layer thickness were measured by reflectometry as well as visible ellipsometry. The tensile strain reduction at optimized growth temperature, Si/C ratio in the gas phase and deposition rate are demonstrated by the observation of freestanding SiC cantilevers.

Investigations of ZnO Nanorod Films Grown by Hydrothermal Method for Ethanol Gas Sensor

2020 ◽  
Vol 19 (03) ◽  
pp. 1950022
Author(s):  
S. Jainulabdeen ◽  
C. Gopinathan ◽  
A. Mumtaz Parveen ◽  
K. Mahalakshmi ◽  
K. Jeyadheepan ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Grazing Incidence ◽  
Growth Time ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ethanol Sensing ◽  
Zno Rods

Rod-structured ZnO has grown hydrothermally on the seed layer by varying growth time. The growth mechanism of rod-structured ZnO thin films is studied extensively with the help of characterizing tools. The preferred orientation and c/a ratio are studied with Grazing Incidence X-ray diffraction (GIXRD). The growth mechanism of ZnO rod structure is studied in detailed manner with Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The optical absorption and emission properties of ZnO rods are studied with respect to growth morphology. Ethanol sensing measurements are carried out at room temperature (RT). The nanostructured ZnO films show good response and sensitivity to ethanol gas at RT.

ZnO Based SAW Delay Line: Thin Film Characteristics and IDT Fabrication

2003 ◽  
Vol 785 ◽  
Author(s):  
Farid Hassani ◽  
Shahrokh Ahmadi ◽  
Can E. Korman ◽  
Mona Zaghloul ◽  
Shiva Hullavarad ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Delay Line ◽  
Surface Acoustic Waves ◽  
Rf Sputtering ◽  
Device Fabrication ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Interdigital Electrodes

AbstractZnO, a well-known piezoelectric material, is used to develop micro-scale Surface Acoustic Wave (SAW) delay line sensor. In this work, SAW delay line Devices are fabricated employing ZnO films that are deposited by RF sputtering technique. Films are characterized prior to device fabrication by X-Ray Diffraction (XRD) for film crystalline quality, UV-visible transmission spectroscopy for optical characteristics, and Atomic Force Microscopy (AFM) for surface morphology. Interdigital electrodes producing surface acoustic waves in the hundreds of MHz are developed by photolithography and metalization techniques. SAW delay line device testing, measurement and characteristics on RF sputtered ZnO films are presented and compared.

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