LOCALIZATION OF THE ENERGY STATES OF LEAD INDUCING THE EFFECT OF RECTIFICATION AND NEGATIVE DIFFERENTIAL RESISTANCE PREDICTED BY FIRST-PRINCIPLES STUDY

2013 ◽  
Vol 27 (17) ◽  
pp. 1350081 ◽  
Author(s):  
Y. MIN ◽  
J. H. FANG ◽  
C. G. ZHONG ◽  
Z. C. DONG ◽  
C. P. CHEN ◽  
...  
Keyword(s):  
Molecular Electronics ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Reverse Bias ◽  
Forward Bias ◽  
Differential Resistance ◽  
First Principles Calculations ◽  
Rectification Effect ◽  
Potential Applications ◽  
Energy States

The first-principles calculations of the transport characteristics of 4-(5-(2-(5-(4-mercaptophenyl)thiophene-2-yl)ethyl)pyridin-2-yl)benzenethiol sandwiched between two gold leads are performed. The effect of rectification and negative differential resistance (NDR) are obtained, which promise the potential applications in the field of molecular electronics. The rectification effect is 4.49. The peak/valley ratio of the NDR effect is as large as 4.51 for the forward bias and 12.09 for the reverse bias. The strong coupling between gold lead and molecule through thiolate results in the localization of the energy states of gold lead, which may induce the effect of rectification and NDR.

scholarly journals Rectifying Performance of Heterojunction Based on α-Borophene Nanoribbons with Edge Passivation

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Guoliang Yu ◽  
Wence Ding ◽  
Xianbo Xiao ◽  
Xiaobo Li ◽  
Guanghui Zhou
Keyword(s):  
Electronic Transport ◽  
First Principles ◽  
First Principles Calculations ◽  
Zigzag Edge ◽  
Hydrogen Atoms ◽  
Rectification Effect ◽  
Structural Details ◽  
Potential Applications ◽  
Matching Degree ◽  
The Right

Abstract We propose a planar model heterojunction based on α-borophene nanoribbons and study its electronic transport properties. We respectively consider three types of heterojunctions. Each type consists of two zigzag-edge α-borophene nanoribbons (Z αBNR), one is metallic with unpassivated or passivated edges by a hydrogen atom (1H-Z αBNR) and the other is semiconducting with the edge passivated by two hydrogen atoms (2H-Z αBNR) or a single nitrogen atom (N-Z αBNR). Using the first-principles calculations combined with the nonequilibrium Green’s function, we observe that the rectifying performance depends strongly on the atomic structural details of a junction. Specifically, the rectification ratio of the junction is almost unchanged when its left metallic ribbon changes from ZBNR to 1H-Z αBNR. However, its ratio increases from 120 to 240 when the right semiconducting one varies from 2H-Z αBNR to N-Z αBNR. This rectification effect can be explained microscopically by the matching degree the electronic bands between two parts of a junction. Our findings imply that the borophene-based heterojunctions may have potential applications in rectification nano-devices.

scholarly journals Edge hydrogenation-induced spin-filtering and negative differential resistance effects in zigzag silicene nanoribbons with line defects

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25244-25252 ◽  
Author(s):  
Xiaoteng Li ◽  
Dongqing Zou ◽  
Bin Cui ◽  
Changfeng Fang ◽  
Jingfen Zhao ◽  
...  
Keyword(s):  
First Principles ◽  
Negative Differential Resistance ◽  
Spin Transport ◽  
Differential Resistance ◽  
First Principles Calculations ◽  
Line Defects ◽  
Silicene Nanoribbons ◽  
Spin Filtering

We investigate the effects of line defects (558-defect and 57-defect) and edge hydrogenation (mono-hydrogenation and di-hydrogenation) on magnetism and spin transport of zigzag silicene nanoribbons (ZSiNRs) by first-principles calculations.

Length-dependent rectification and negative differential resistance in heterometallic n-alkanedithiol junctions

RSC Advances ◽  
2015 ◽  
Vol 5 (18) ◽  
pp. 13917-13922 ◽  
Author(s):  
Jian Shao ◽  
X. Y. Zhang ◽  
Yue Zheng ◽  
Biao Wang ◽  
Yun Chen
Keyword(s):  
Transport Properties ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
First Principles Calculations

The transport properties of heterometallic n-alkanedithiol junctions were investigated via first-principles calculations.

Negative differential resistance in “sulflower”-based molecular junction predicted by first-principles study

2021 ◽  
pp. 2150167
Author(s):  
Ji-Mei Shen ◽  
Jing Liu
Keyword(s):  
First Principles ◽  
Coulomb Blockade ◽  
Negative Differential Resistance ◽  
Local Density ◽  
Differential Resistance ◽  
Differential Conductance ◽  
First Principles Study ◽  
Current Voltage ◽  
Potential Applications ◽  
Current Voltage Characteristics

The electronic transport behavior of a sulflower molecule sandwiched between metal leads by S atom connecting apex Au or Ag atoms was investigated using a first-principles study by current-voltage characteristics, transmission spectrum and local density of states. Negative differential resistance (NDR) effect which originates from Coulomb blockade driven by bias was obtained. We also found that the differential conductance can be modulated by the metal leads with different work functions, which promise the potential applications in molecular devices in the future.

Influence of spatial distribution of molecule on the switching behavior: A first-principles study

2018 ◽  
Vol 17 (06) ◽  
pp. 1850038 ◽  
Author(s):  
Jingjuan Yang ◽  
Xiaoxiao Han ◽  
Peipei Yuan ◽  
Baoan Bian ◽  
Bin Liao
Keyword(s):  
Spatial Distribution ◽  
Electronic Transport ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Spatial Distributions ◽  
Transmission Spectra ◽  
First Principles Calculations ◽  
Negative Differential Resistance Effect

We perform first-principles calculations to investigate the electronic transport properties of chalcone and flavanone molecules sandwiched between graphene electrodes. These two molecules can be reversibly converted between open and closed states induced by pH, and the significant switching behaviors are observed. The currents and switching ratios are influenced by rotating molecules around the [Formula: see text] axis, which are discussed by the transmission eigenstates, electrostatic potential distributions and transmission spectra. The observed negative differential resistance effect is explained in chalcone configuration. The results suggest that spatial distributions of molecules will influence the performance of devices, indicating a potential application in future molecular circuits.

Spintronic Transport Performances of VSe2 Nanoribbons

2020 ◽  
Vol 15 (2) ◽  
pp. 269-275
Author(s):  
Wei-Chao Zhang ◽  
Wei-Feng Sun
Keyword(s):  
Bias Voltage ◽  
Electronic Transport ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Transmission Spectra ◽  
First Principles Calculations ◽  
Spintronic Devices ◽  
Crystal Anisotropy ◽  
Filtering Effect

The spin-resolved electronic transport behaviors of VSe2 nanoribbons are theoretically investigated to explore their applications in spintronic devices, employing by the first-principles calculations combined with nonequilibrium Green's function scheme. The band structure, current varying curves with bias voltage between nanoribbon terminal electrodes and electronic transmission spectra of two representative VSe2 nanoribbons along zigzag and armchair crystallographic orientations are calculated respectively. The evident negative differential resistance under the bias voltage of ∼0.6 V for the armchair orientation has been found, implying the significant crystal anisotropy of VSe2 monolayer. Meanwhile, both the VSe2 nanoribbon devices along zigzag and armchair directions represent favorable spin filtering effect, suggesting they are prospective candidates as a multifunction material in spintronic and digital applications.

scholarly journals Negative differential resistance and spin filter effects in VS2 monolayers

RSC Advances ◽  
2017 ◽  
Vol 7 (54) ◽  
pp. 33733-33736
Author(s):  
G. W. Peng ◽  
L. Zhu ◽  
K. L. Yao
Keyword(s):  
Band Structure ◽  
First Principles ◽  
Negative Differential Resistance ◽  
Function Method ◽  
Spin Current ◽  
Differential Resistance ◽  
First Principles Calculations ◽  
Spin Filter ◽  
Non Equilibrium Green’S Function ◽  
Filter Effects

We have calculated the spin current based on the bias voltage, band structure and transmission spectrum for VS2 monolayers along the zigzag and armchair orientations by first-principles calculations combined with the non-equilibrium Green's function method.

Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices

2021 ◽  
Vol 9 (39) ◽  
pp. 13755-13760
Author(s):  
Songcheng Hu ◽  
Zhenhua Tang ◽  
Li Zhang ◽  
Dijie Yao ◽  
Zhigang Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Negative Differential Resistance ◽  
Carrier Transport ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Memory Devices ◽  
Transport Mechanisms ◽  
Resistive Switching Memory ◽  
Potential Applications ◽  
Switching Memory

The new effects induced by light in materials have important potential applications in optoelectronic multifunctional electronic devices.

Two-dimensional layered Janus-In2SeTe/C2N van der Waals heterostructures for photocatalysis and photovoltaics: first-principles calculations

2020 ◽  
Vol 44 (37) ◽  
pp. 16092-16100
Author(s):  
Xiao-Hua Li ◽  
Bao-Ji Wang ◽  
Hui Li ◽  
Xue-Feng Yang ◽  
Rui-Qi Zhao ◽  
...  
Keyword(s):  
Dft Calculations ◽  
First Principles ◽  
Sustainable Energy ◽  
Van Der Waals ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Van Der Waals Heterostructures ◽  
Potential Applications

Through DFT calculations, Janus-In2SeTe/C2N heterostructures are found to have great potential applications in the fields of clean and sustainable energy.

scholarly journals An emerging Janus MoSeTe material for potential applications in optoelectronic devices

2019 ◽  
Vol 7 (39) ◽  
pp. 12312-12320 ◽  
Author(s):  
Xiaoyong Yang ◽  
Deobrat Singh ◽  
Zhitong Xu ◽  
Ziwei Wang ◽  
Rajeev Ahuja
Keyword(s):  
First Principles ◽  
Transition Metal Dichalcogenides ◽  
Chemical Properties ◽  
Detailed Comparison ◽  
Physical And Chemical Properties ◽  
First Principles Calculations ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Physical And Chemical ◽  
And Chemical Properties

Motivated by the extraordinary physical and chemical properties of Janus transition-metal dichalcogenides (TMDs) due to the change of the crystal field originating from their asymmetry structures, the electronic and optical properties of the MoSeTe monolayer in 2H and 1T phases are systematically studied by first-principles calculations, and a detailed comparison with the parental MoSe2 and MoTe2 monolayer is made.

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