MODELING OF TRANSITION TEMPERATURE FOR PULSED LASER DEPOSITION NdBa2Cu3O7-δ THIN FILMS VIA SUPPORT VECTOR REGRESSION

2013 ◽  
Vol 27 (15) ◽  
pp. 1362040 ◽  
Author(s):  
T. T. XIAO ◽  
C. Z. CAI ◽  
J. L. TANG ◽  
S. J. HUANG
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Pulsed Laser Deposition ◽  
Support Vector Regression ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Absolute Error ◽  
Laser Deposition ◽  
Support Vector ◽  
Data Set

NdBa 2 Cu 3 O 7-δ (NBCO) is a potential superconducting material for application as thin films because of its transition temperatures as high as 94 K as well as the smooth surface and excellent epitaxial quality. This study illustrates the application of the support vector regression (SVR) approach in modeling and predicting the transition temperature (T c ) of NBCO thin films fabricated via pulsed laser deposition (PLD). The model was trained and tested based on an experimental data set comprised of three depositing parameters, the pressure (p), temperature (T) and laser energy (E). The results reveal that the mean absolute error (0.22 K) achieved by leave-one-out cross validation test of SVR is smaller than that (0.68 K) achieved by multivariable nonlinear regression (MNR). An available maximum T c (92.0 K) deposited at an optimal condition for NBCO films is predicted by using the established SVR model. This investigation suggests that SVR may be a promising and practical methodology to accurately estimate the transition temperature for NBCO thin films deposited via PLD under various depositing conditions.

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition

2020 ◽  
Vol 177 ◽  
pp. 32-37 ◽  
Author(s):  
Thameur Hajlaoui ◽  
Nicolas Émond ◽  
Christian Quirouette ◽  
Boris Le Drogoff ◽  
Joëlle Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Boron Doped ◽  
Vo2 Thin Films

Pulsed LASER Deposition of MgO Thin Films

2012 ◽  
Vol 545 ◽  
pp. 38-42 ◽  
Author(s):  
Norlida Kamarulzaman ◽  
Nurhanna Badar
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Thin Film Surface ◽  
193 Nm ◽  
Chamber Gas

MgO thin films were deposited by Pulsed Laser deposition using different process parameter. The characteristics were investigated via X-Ray diffraction (XRD), Scanning Electron Microscope (SEM) and Digital Holographic Microscope (DHM). It is found that the thin film surface morphology and thickness are different. It was found that the different process parameters such as chamber gas pressure, substrate temperature, LASER energy and number of pulses greatly influence the characteristics of the thin films obtained. The thin films have very low thicknesses of 97, 187 and 193 nm.

Electrochromic WO3-x and Colossal Magnetoresistive (La, Sr)MnO3 Perovskite Oxide Thin Films by Pulsed Laser Deposition

2002 ◽  
Vol 728 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Eiichi Hiraiwa ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Yoshiaki Suda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Perovskite Oxide ◽  
Oxide Thin Films ◽  
Colossal Magnetoresistive

AbstractThe functional oxide thin films of electrochromic WO3-x and colossal magnetoresistive La0.8Sr0.2MnO3 were prepared by a KrF excimer pulsed laser deposition technique. Optical transparency and electrical conductivity of the WO3-x film were changed by the oxygen content in the lattice. Triclinic, tetragonal and amorphous WO3-x films were prepared by adjusting the oxygen atmosphere during the deposition. We revealed the relationship between the crystal structure and the gas sensing property of the films. The triclinic WO3-x film (1 μm) showed the high sensitivity to NO (60 ppm) gas at an operating temperature of 150°C. The colossal magnetoresistive La0.8Sr0.2MnO3 thin film having the MR ratio of 15 % (H=7 kG) was deposited under the conditions of the laser energy density of 2 J/cm2 (5Hz), substrate temperature of 850°C and oxygen pressure of 500 mTorr. The magnetic sensor composing of the La0.8Sr0.2MnO3 thin film responded to the AC magnetic field (1 kHz).

XRD study on the effect of the deposition condition on pulsed laser deposition of ZnO films

Open Physics ◽  
2008 ◽  
Vol 6 (3) ◽  
Author(s):  
Bao Man ◽  
Hong Xi ◽  
Chuan Chen ◽  
Mei Liu ◽  
Jing Wei
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Crystalline Quality ◽  
Zno Thin Films ◽  
Laser Source ◽  
Zno Films

AbstractUsing a pulsed laser deposition (PLD) process on a ZnO target in an oxygen atmosphere, thin films of this material have been deposited on Si(111) substrates. An Nd: YAG pulsed laser with a wavelength of 1064 nm was used as the laser source. The influences of the deposition temperature, laser energy, annealing temperature and focus lens position on the crystallinity of ZnO films were analyzed by X-ray diffraction. The results show that the ZnO thin films obtained at the deposition temperature of 400°C and the laser energy of 250 mJ have the best crystalline quality in our experimental conditions. The ZnO thin films fabricated at substrate temperature 400°C were annealed at the temperatures from 400°C to 800°C in an atmosphere of N2. The results show that crystalline quality has been improved by annealing, the optimum temperature being 600°C. The position of the focusing lens has a strong influence on pulsed laser deposition of the ZnO thin films and the optimum position is 59.5 cm from the target surface for optics with a focal length of 70 cm.

Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates

1997 ◽  
Vol 468 ◽  
Author(s):  
M. Okamoto ◽  
T. Ogawa ◽  
Y. Mori ◽  
T. Sasaki
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Atomic Ratio ◽  
Laser Deposition ◽  
X Ray ◽  
Si Substrates ◽  
High Laser ◽  
High Laser Energy

ABSTRACTThe smooth and highly oriented AlN films were obtained using pulsed laser deposition from sintered AlN target in a nitrogen ambient. The XRD investigation revealed that highly oriented AlN thin films along the c-axis (AlN (0002)) normal to the substrate were obtained both on Si(111) and on Si(100) substrates. The (0002) x-ray peak width became narrower with increasing substrate temperature. The CL investigation showed that AlN films at high laser energy density (Ed) indicated CL peak at shorter wavelength (306nm) than that at low Ed (394nm). N/Al atomic ratio in AlN films grown at high Ed also increased as comparison with the films grown at low Ed.

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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