Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer

2017 ◽  
Vol 31 (27) ◽  
pp. 1750197 ◽  
Author(s):  
Perihan Durmuş ◽  
Şemsettin Altindal
Keyword(s):  
Conduction Mechanism ◽  
Bismuth Titanate ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Electrical Parameters ◽  
Zero Bias ◽  
Semiconductor Structures ◽  
Current Voltage ◽  
Diode Behavior ◽  
Increasing Temperature

In this study, electrical parameters of the Al/Bi4Ti3O[Formula: see text]/p-Si metal-ferroelectric-semiconductor (MFS) structure and their temperature dependence were investigated using current–voltage (I–V) data measured between 120 K and 300 K. Semi-logarithmic I–V plots of the structure revealed that fabricated structure presents two-diode behavior that leads to two sets of ideality factor, reverse saturation current and zero-bias barrier height (BH) values. Obtained results of these parameters suggest that current conduction mechanism (CCM) deviates strongly from thermionic emission theory particularly at low temperatures. High values of interface states and nkT/q[Formula: see text]−[Formula: see text]kT/q plot supported the idea of deviation from thermionic emission. In addition, [Formula: see text](I)[Formula: see text]−[Formula: see text][Formula: see text](V) plots suggested that CCM varies from one bias region to another and depends on temperature as well. Series resistance values were calculated using Ohm’s law and Cheungs’ functions, and they decreased drastically with increasing temperature.

scholarly journals On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

2020 ◽  
Vol 126 (12) ◽  
Author(s):  
Abbas Sabahi Namini ◽  
Mehdi Shahedi Asl ◽  
Gholamreza Pirgholi-Givi ◽  
Seyed Ali Delbari ◽  
Javid Farazin ◽  
...  
Keyword(s):  
Series Resistance ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Current Transport ◽  
Electrical Characteristics ◽  
Transport Mechanisms ◽  
Electrical Parameters ◽  
Zero Bias ◽  
Current Voltage ◽  
Significant Increment

AbstractThe present study aims to investigate the effect of (PVP: Sn-TeO2) interfacial layer on the electrical parameters of the Al/p-Si diode. For this aim, (Sn-TeO2) nanostructures were developed by the ultrasound-assisted method, and both their electrical and optical characteristics were investigated by XRD, SEM, EDS, and UV–Vis methods. The bandgap of Sn-TeO2 was found as 4.65 eV from the (αhυ)2 vs (hυ) plot. The main electrical parameters of the Al/p-Si diodes with/ without (PVP: Sn-TeO2) interlayer, such as ideality factor (n), zero-bias barrier height (Φ0), and series resistance (Rs), were calculated by applying and comparing two methods of thermionic emission theory and Cheung’s functions. These results show that the presence of the (PVP: Sn-TeO2 interlayer, along with the increase of Φ0, and the decrease of n and Rs, led to a significant increment in the rectification of MPS when compared to MS diode. The current-transport mechanisms (CTMs) of them were examined through the forward LnIF − LnVF and reverse LnIR − VR0.5 bias currents, and then, the Poole–Frenkel and Schottky field-lowering coefficients (β) were calculated and obtained its value from the theoretical and experimental methods showed that the mechanism of the reverse current of MS and MPS diodes is governing by the Schottky emission and Pool-Frenkel mechanism, respectively.

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Electrical Characterization of In Schottky Contacts to Epitaxial n-In0.46Ga0.54P Grown on n+-GaAs by Mocvd

1996 ◽  
Vol 448 ◽  
Author(s):  
N. Marcano ◽  
A. Singh
Keyword(s):  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Interface Layer ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Direct Current Voltage ◽  
Etched Surface

AbstractIn/n-In0.46Ga0.54P Schottky diode was fabricated by thermal evaporation of In on chemically etched surface of In0.45Ga0.54P:Si epitaxial layer grown on highly doped n type GaAs. The In metal formed a high quality rectifying contact to In0.46Ga0.54P:Si with a rectification ratio of 500. The direct current-voltage/temperature (I-V/T) characteristics were non-ideal with the values of the ideality factor (n) between 1.26-1.78 for 400>T>260 K. The forward I-V data strongly indicated that the current was controlled by the generation-recombination (GR) and thermionic emission (TE) mechanisms for temperature in the range 260-400 K. From the temperature variation of the TE reverse saturation current, the values of (0.75±0.05)V and the (4.5±0.5)×10-5 Acm-2K-2 for the zero bias zero temperature barrier height (φoo) and modified effective Richardson constant were obtained. The 1 MHz capacitance-voltage (C-V) data for 260 K < T < 400 K was analyzed in terms of the C-2-V relation including the effect of interface layer to obtain more realistic values of the barrier height (φbo). The temperature dependence of φbo was described the relation φbo =(0.86±10.03) - (8.4±0.7)×l0-4T. The values of φoo, obtained by the I-V and C-V techniques agreed well.

Electronic Properties of ZnO Varistors: A New Model

1981 ◽  
Vol 5 ◽  
Author(s):  
G. E. Pike
Keyword(s):  
Grain Boundaries ◽  
Impact Ionization ◽  
Thermionic Emission ◽  
Low Frequency ◽  
Charge Trapping ◽  
Emission Model ◽  
Zero Bias ◽  
Current Voltage ◽  
Zno Varistors ◽  
Dc Current

ABSTRACTMuch of the research on ZnO varistors has concentrated on the explanation of their dc current-voltage characteristics. However, varistors also have unusual ac properties which can be technologically important, and must be described by any comprehensive model. In an ideal varistor with identical grain boundaries throughout, there should be no dispersive capacitance at zero bias. In real varistors this capacitance varies considerably with frequency. This dispersion has two causes, charge trapping in the depletion regions and differing grain boundary barriers. Calculations for each process are given. For voltages well below the varistor breakdown value, the low frequency capacitance increases with applied voltage. At even higher voltages the capacitance turns over and becomes negative. All of these effects can be described with a double depletion layer/thermionic emission model. The anomalous capacitance behavior with bias is due to the modulation of the potential barriers by charge trapping at the grain boundaries. In the varistor breakdown regime minority carriers created by impact ionization are important.

MODELING OF COAXIAL CARBON NANOTUBE SCHOTTKY DIODES

2010 ◽  
Vol 24 (17) ◽  
pp. 1883-1890
Author(s):  
ALIREZA KARGAR
Keyword(s):  
Carbon Nanotube ◽  
Field Effect Transistors ◽  
Schottky Diodes ◽  
Gate Insulator ◽  
Saturation Current ◽  
Electrical Parameters ◽  
Single Walled Carbon Nanotube ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

A carbon nanotube (CNT) Schottky diode based on coaxial geometry is presented. We show that coaxially gated CNT field effect transistors (FETs) with a p-type semiconducting single-walled carbon nanotube (s-SWNT) and asymmetric contacts can provide good diode characteristics. The effect of different physical and electrical parameters such as gate bias voltage, gate insulator thickness, and CNT diameter on the rectification current–voltage characteristics is investigated. We demonstrate that it is possible to tune the rectification characteristic, threshold voltage, reverse saturation current, and reverse turn-on voltage by using these parameters.

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1120-1121 ◽  
pp. 435-439
Author(s):  
Nathaporn Promros ◽  
Dalin Prajakkan ◽  
Nantharat Hongsa ◽  
Nattanee Suthayanan ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Current Voltage Characteristics ◽  
P Type

In this work, n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by facing-targets direct-current sputtering. We measured their current-voltage characteristics at low temperatures ranging from 300 K down to 50 K and investigated their ideality factor, saturation current and series resistance using thermionic emission theory and Cheung’s method. From thermionic emission theory, the ideality factor and saturation current density were calculated from the slope of the linear part from the forward lnJ-V and the straight line intercept of lnJ-V at zero voltage, respectively. When the temperature decreased from 300 K down to 50 K, the ideality factor increased from 1.12 to 11.13, whereas the saturation current density decreased from 2.09 × 10-6 A/cm2 to 1.06 × 10-9 A/cm2. Using Cheung’s method, we plotted the relations of dV/d(lnJ)-J and H(J)-J in order to estimate the series resistance from the slope of both plots. In addition, we estimated the ideality factor from a y-axis intercept of the dV/d(lnJ)-J plot. The series resistances from both plots were consistent with each other and increased with the decreasing temperature. The ideality factor estimated by Cheung’s method was in agreement with that obtained from estimation by thermionic emission theory.

Current-Voltage and Capacitance-Voltage Characteristics of Pd Schottky Diodes Fabricated on ZnO Grown along Zn- and O-Faces

2013 ◽  
Vol 313-314 ◽  
pp. 270-274
Author(s):  
M. Faisal ◽  
M. Asghar ◽  
Khalid Mahmood ◽  
Magnus Willander ◽  
O. Nur ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Doping Concentration ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Increasing Temperature

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements were utilized to understand the transport mechanism of Pd Schottky diodes fabricated on Zn- and O-faces of ZnO. From I-V measurements, in accordance with the thermionic emission mechanism theory, it was found that the series resistance Rsand the ideality factor n were strongly temperature dependent that decreased with increasing temperature for both the faces (Zn and O-face) of ZnO revealing that the thermionic emission is not the dominant process. The barrier height øB(I-V)increased with increasing temperature for both faces. The measured values of ideality factor, barrier height and series resistance for Zn- and O-faces at room temperature were 4.4, 0.60 eV, 217 Ω and 2.8, 0.49 eV, 251 Ω respectively. The capacitance-voltage (C–V) measurements were used to determine the doping concentration Nd, the built-in-potential Vbi, and the barrier height øB(C-V). The doping concentration was found to be decreased with increasing depth. The barrier height øB(C-V)calculated for O-polar and Zn-polar faces decreases with increasing temperature. The values of barrier height øB(C-V)determined from C-V measurements were found higher than the values of barrier height øB(I-V). Keeping in view the calculated values of ideality factor, barrier height, and series resistance shows that O-polar face is qualitatively better than Zn-polar face.

Pinning Fermi Level of p-GaN due to Three Different (Zr, Ti, and Cr) Metal Contact

2006 ◽  
Vol 517 ◽  
pp. 262-266 ◽  
Author(s):  
C.K. Tan ◽  
Azlan Abdul Aziz ◽  
Hassan Zainuriah ◽  
F.K. Yam ◽  
C.W. Lim ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Diodes ◽  
Single Layer ◽  
Saturation Current ◽  
Metal Contacts ◽  
Electrical Parameters ◽  
Barrier Heights ◽  
Layer Deposition ◽  
Current Voltage

The Current-Voltage-Temperature (I-V-T) characteristics of single layer deposition, consisting of Zr, Ti, or Cr/p-GaN Schottky diodes were determined in the temperature range 27- 100oC. Sputtering method was used for deposition of these metals on p-GaN. Analysis of the measured characteristics at room temperature allows the determination of the electrical parameters, the saturation current Io and the ideality factorη. The barrier heights and effective Richardson coefficients were determined through activation energy plot. It was found that pinning of Fermi level occurred for these metal contacts on p-GaN with the carrier concentration of 5.6x 1017 cm-3, where the Schottky barrier heights of Zr, Ti, or Cr/p-GaN are determined to be in the same range (~0.87eV).

scholarly journals Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

2021 ◽  
Author(s):  
A. Buyukbas Ulusan ◽  
Adem Tataroglu ◽  
S. altindal ◽  
Y. Azizian-Kalandaragh
Keyword(s):  
Thermionic Emission ◽  
Illumination Intensity ◽  
Trap Level ◽  
Saturation Current ◽  
Electron Hole ◽  
Current Voltage ◽  
Photovoltaic Applications ◽  
Electronic Parameters ◽  
Photo Response ◽  
Good Relation

Abstract Photo-response properties of the Au/(CoFe2O4-PVP)/n-Si (MPS) diode were investigated using current-voltage (I-V) measurements achieved under dark and various illumination conditions. The experimental results showed that the MPS diode has a good response to the illumination. Especially, in reverse-bias region, photocurrent (Iph) increases with increasing illumination intensity (P) due to the formation of electron–hole pairs. The double-logarithmic Iph-P plot has a good relation with 1.27 slope and such high value of slope indicates a lower density of the unoccupied trap level. This indicates that the diode exhibits a good photoconductive and photovoltaic behavior. The photo-to-dark current ratio confirms the photo-sensitivity of the diode. Thermionic emission (TE) theory was used to determine the diode electronic parameters such as saturation current (I0), ideality factor (n) and barrier height (ΦB0) and their values were calculated from the measured I-V data. Moreover, the ΦB0 and series resistance (Rs) were extracted from an alternative method suggested by Norde. All these parameters (ΦB0, n, Rs, and I0) decrease with increasing illumination intensity and there is a good linear correlation between ΦB0 and n as ΦB0 (n) = 4.72x10− 2n + 0.5464 eV. As a results, the fabricated MPS diode due to the excellent photo-response can be used for photovoltaic applications.

Diode Parameters of Heterojunctions Comprising p-Type Si Substrate and n-Type β-FeSi2 Thin Films

2014 ◽  
Vol 1043 ◽  
pp. 57-61
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Motoki Takahara ◽  
Mahmoud Shaban ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Straight Line ◽  
Current Voltage ◽  
Saturation Current Density ◽  
P Type ◽  
Direct Current Sputtering

n-Type β-FeSi2/p-type Si heterojunctions have been successfully fabricated by facing-targets direct-current sputtering at a substrate temperature of 600 °C without post-annealing and their current-voltage characteristics were measured at low temperatures ragne from 300 K down to 50 K. The ideality factor, saturation current and series resistance were estimated by the thermionic emission theory and Cheung’s method. By the thermionic emission theory, we calculated the ideality factor from the slope of the linear part from the forward lnJ-V and estimated the saturation current density from the straight line intercept of lnJ-V at a zero voltage. As decreasing temperatures from 300 down to 50 K, the value of ideality factor increased from 1.2 to 15.6, while the value of saturation current density decreased from 1.6 × 10−6 A/cm2 to 3.8 × 10−10 A/cm2. From the plots of dV/d (lnJ)-J and H(J)-J by Cheung’s method, the obtained values of series resistances are consistent with each other. The series resistances analyzed from both plots increased as decreasing temperatures.

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