scholarly journals Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

2021 ◽  
Author(s):  
A. Buyukbas Ulusan ◽  
Adem Tataroglu ◽  
S. altindal ◽  
Y. Azizian-Kalandaragh
Keyword(s):  
Thermionic Emission ◽  
Illumination Intensity ◽  
Trap Level ◽  
Saturation Current ◽  
Electron Hole ◽  
Current Voltage ◽  
Photovoltaic Applications ◽  
Electronic Parameters ◽  
Photo Response ◽  
Good Relation

Abstract Photo-response properties of the Au/(CoFe2O4-PVP)/n-Si (MPS) diode were investigated using current-voltage (I-V) measurements achieved under dark and various illumination conditions. The experimental results showed that the MPS diode has a good response to the illumination. Especially, in reverse-bias region, photocurrent (Iph) increases with increasing illumination intensity (P) due to the formation of electron–hole pairs. The double-logarithmic Iph-P plot has a good relation with 1.27 slope and such high value of slope indicates a lower density of the unoccupied trap level. This indicates that the diode exhibits a good photoconductive and photovoltaic behavior. The photo-to-dark current ratio confirms the photo-sensitivity of the diode. Thermionic emission (TE) theory was used to determine the diode electronic parameters such as saturation current (I0), ideality factor (n) and barrier height (ΦB0) and their values were calculated from the measured I-V data. Moreover, the ΦB0 and series resistance (Rs) were extracted from an alternative method suggested by Norde. All these parameters (ΦB0, n, Rs, and I0) decrease with increasing illumination intensity and there is a good linear correlation between ΦB0 and n as ΦB0 (n) = 4.72x10− 2n + 0.5464 eV. As a results, the fabricated MPS diode due to the excellent photo-response can be used for photovoltaic applications.

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1120-1121 ◽  
pp. 435-439
Author(s):  
Nathaporn Promros ◽  
Dalin Prajakkan ◽  
Nantharat Hongsa ◽  
Nattanee Suthayanan ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Current Voltage Characteristics ◽  
P Type

In this work, n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by facing-targets direct-current sputtering. We measured their current-voltage characteristics at low temperatures ranging from 300 K down to 50 K and investigated their ideality factor, saturation current and series resistance using thermionic emission theory and Cheung’s method. From thermionic emission theory, the ideality factor and saturation current density were calculated from the slope of the linear part from the forward lnJ-V and the straight line intercept of lnJ-V at zero voltage, respectively. When the temperature decreased from 300 K down to 50 K, the ideality factor increased from 1.12 to 11.13, whereas the saturation current density decreased from 2.09 × 10-6 A/cm2 to 1.06 × 10-9 A/cm2. Using Cheung’s method, we plotted the relations of dV/d(lnJ)-J and H(J)-J in order to estimate the series resistance from the slope of both plots. In addition, we estimated the ideality factor from a y-axis intercept of the dV/d(lnJ)-J plot. The series resistances from both plots were consistent with each other and increased with the decreasing temperature. The ideality factor estimated by Cheung’s method was in agreement with that obtained from estimation by thermionic emission theory.

Diode Parameters of Heterojunctions Comprising p-Type Si Substrate and n-Type β-FeSi2 Thin Films

2014 ◽  
Vol 1043 ◽  
pp. 57-61
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Motoki Takahara ◽  
Mahmoud Shaban ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Straight Line ◽  
Current Voltage ◽  
Saturation Current Density ◽  
P Type ◽  
Direct Current Sputtering

n-Type β-FeSi2/p-type Si heterojunctions have been successfully fabricated by facing-targets direct-current sputtering at a substrate temperature of 600 °C without post-annealing and their current-voltage characteristics were measured at low temperatures ragne from 300 K down to 50 K. The ideality factor, saturation current and series resistance were estimated by the thermionic emission theory and Cheung’s method. By the thermionic emission theory, we calculated the ideality factor from the slope of the linear part from the forward lnJ-V and estimated the saturation current density from the straight line intercept of lnJ-V at a zero voltage. As decreasing temperatures from 300 down to 50 K, the value of ideality factor increased from 1.2 to 15.6, while the value of saturation current density decreased from 1.6 × 10−6 A/cm2 to 3.8 × 10−10 A/cm2. From the plots of dV/d (lnJ)-J and H(J)-J by Cheung’s method, the obtained values of series resistances are consistent with each other. The series resistances analyzed from both plots increased as decreasing temperatures.

Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer

2017 ◽  
Vol 31 (27) ◽  
pp. 1750197 ◽  
Author(s):  
Perihan Durmuş ◽  
Şemsettin Altindal
Keyword(s):  
Conduction Mechanism ◽  
Bismuth Titanate ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Electrical Parameters ◽  
Zero Bias ◽  
Semiconductor Structures ◽  
Current Voltage ◽  
Diode Behavior ◽  
Increasing Temperature

In this study, electrical parameters of the Al/Bi4Ti3O[Formula: see text]/p-Si metal-ferroelectric-semiconductor (MFS) structure and their temperature dependence were investigated using current–voltage (I–V) data measured between 120 K and 300 K. Semi-logarithmic I–V plots of the structure revealed that fabricated structure presents two-diode behavior that leads to two sets of ideality factor, reverse saturation current and zero-bias barrier height (BH) values. Obtained results of these parameters suggest that current conduction mechanism (CCM) deviates strongly from thermionic emission theory particularly at low temperatures. High values of interface states and nkT/q[Formula: see text]−[Formula: see text]kT/q plot supported the idea of deviation from thermionic emission. In addition, [Formula: see text](I)[Formula: see text]−[Formula: see text][Formula: see text](V) plots suggested that CCM varies from one bias region to another and depends on temperature as well. Series resistance values were calculated using Ohm’s law and Cheungs’ functions, and they decreased drastically with increasing temperature.

scholarly journals A Study of a-Sic/C-Si(n) Isotype Heterojunctions

1993 ◽  
Vol 16 (1) ◽  
pp. 55-64 ◽  
Author(s):  
N. Georgoulas ◽  
L. Magafas ◽  
A. Thanailakis
Keyword(s):  
Temperature Dependence ◽  
Crystalline Silicon ◽  
Diffusion Mechanism ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Emission Mechanism ◽  
Drift Diffusion ◽  
Si Substrates ◽  
Current Voltage ◽  
Capacitance Voltage

In the present work a study of the electrical properties of heterojunctions between rf sputtered amorphous silicon carbide (a-SiC) thin films and n-type crystalline silicon (c-Si) substrates is reported. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics, as well as the temperature dependence of the current of a-SiC/c-Si(n) heterojunctions were measured. The I-V characteristics of a-SiC/ c-Si(n) heterojunctions exhibit poor rectification properties, with a high reverse current, at higher temperatures (T > 250K), whereas good rectification properties are obtained at lower temperatures (T < 250K). It was found that the a-SiC/c-Si(n) heterojunctions are isotype, suggesting that-the conductivity of a-SiC is n-type. The temperature dependence of the current (from 185K to 320K) showed that the majority carriers of c-Si(n) (i.e. electrons) are transported from c-Si(n) to a-SiC mainly by the thermionic emission mechanism, or by the drift-diffusion mechanism. From C-V measurements of a-SiC/c-Si(n) heterojunctions the electron affinity of a-SiC was found to be X1= 4.20 ± 0.04 eV. Finally, the a-SiC/ c-Si(n) isotype heterojunctions are expected to be interesting devices as infrared

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Investigation of carrier transport mechanisms in the Cu–Zn–Se based hetero-structure grown by sputtering technique

2018 ◽  
Vol 96 (7) ◽  
pp. 816-825 ◽  
Author(s):  
H.H. Güllü ◽  
M. Terlemezoğlu ◽  
Ö. Bayraklı ◽  
D.E. Yıldız ◽  
M. Parlak
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Band Gap Energy ◽  
Zero Bias ◽  
Hetero Structure ◽  
Current Voltage ◽  
P Type

In this paper, we present results of the electrical characterization of n-Si/p-Cu–Zn–Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current–voltage measurements in the temperature range of 220–360 K, room temperature, and frequency-dependent capacitance–voltage and conductance-voltage measurements. The anomaly in current–voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm−2K−2 by means of modified Richardson plot.

Electrical Properties of Nanostructure n-ZnSe/p-Si(100) Heterojunction Thin Film Diode

2018 ◽  
Vol 775 ◽  
pp. 246-253
Author(s):  
Ngamnit Wongcharoen ◽  
Thitinai Gaewdang
Keyword(s):  
Thin Films ◽  
Ideality Factor ◽  
Room Temperature ◽  
Energy Levels ◽  
Thermionic Emission ◽  
Depletion Region ◽  
Trap Level ◽  
Characteristic Energy ◽  
Znse Thin Films

The ZnSe/Si heterojunction is of specific interest since this structure provides effective solar cell and enables the integration of wide bandgap device in silicon circuits. It is known that the quality of the diode and the current transport mechanisms across the heterojunction may be greatly influenced by the quality of the interface and depends on the crystallinity of the film layer. In this work, n-ZnSe/p-Si (100) heterojunction was fabricated by thermal evaporating ZnSe thin films on p-Si (100) substrates. The current-voltage characteristics of n-ZnSe/p-Si (100) heterojunction were investigated in temperature range 20-300 K. Some important parameters such as barrier height, ideality factor and series resistance values evaluated by using thermionic emission (TE) theory and Cheung’s method at room temperature are n = 2.910,φB0= 0.832 eV and 8.59103Ω, respectively. The temperature dependence of the saturation current and ideality factor are well described by tunneling enhanced recombination at junction interface with activation energy and characteristic energy values about 1.293 eV and E00= 95 meV, respectively. The carrier concentration of ZnSe thin films about 3.16×1013cm-3was deduced from the C-V measurements at room temperature. Admittance spectroscopy was employed for analysis of the defect energy levels situated in depletion region. The results showed that there was a single trap level whose position in the band gap was close to 0.04 eV above valence band. The results of this work may be useful for application such as heterojunction solar cells.

Characterization of Nanocrystalline p-CuO/n-Si Hetrojunction Prepared by RF-Sputtering

2014 ◽  
Vol 1024 ◽  
pp. 120-123
Author(s):  
Nezar Gassem Elfadill ◽  
M. Roslan Hashim ◽  
Khaled M. Chahrour ◽  
Chun Sheng Wang
Keyword(s):  
Cupric Oxide ◽  
Pure Copper ◽  
Rf Sputtering ◽  
Saturation Current ◽  
Font Size ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Current Voltage ◽  
Capacitance Voltage

Normal 0 false false false EN-US X-NONE AR-SA /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Calibri","sans-serif";}Nanocrystalline cupric oxide (CuO) film was prepared by sputtering of pure copper metal on n-type single crystalline Si substrate under argon-oxygen ambient. Structural and morphological analyses of the as-deposited CuO films were performed by X-ray diffraction (XRD) diffractometer and Field Emission Scanning Electron Microscopy (FESEM). The results show Single crystalline granular nanocrystalline (002) CuO films, with 18 nm crystallite size. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed for p-CuO/n-Si hetrojunction. Diode parameters such as saturation current (Is=9.5E-6 A) and ideality factor (n=1.86) were extracted from the dark I-V characteristics. Potential barrier height of the junction (ϕi=1.1V) was revealed from (1/C2- V) plot. Normal 0 false false false EN-US X-NONE AR-SA /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0in 5.4pt 0in 5.4pt; mso-para-margin:0in; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Calibri","sans-serif";}

Electrical Characterization of In Schottky Contacts to Epitaxial n-In0.46Ga0.54P Grown on n+-GaAs by Mocvd

1996 ◽  
Vol 448 ◽  
Author(s):  
N. Marcano ◽  
A. Singh
Keyword(s):  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characterization ◽  
Interface Layer ◽  
Zero Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Direct Current Voltage ◽  
Etched Surface

AbstractIn/n-In0.46Ga0.54P Schottky diode was fabricated by thermal evaporation of In on chemically etched surface of In0.45Ga0.54P:Si epitaxial layer grown on highly doped n type GaAs. The In metal formed a high quality rectifying contact to In0.46Ga0.54P:Si with a rectification ratio of 500. The direct current-voltage/temperature (I-V/T) characteristics were non-ideal with the values of the ideality factor (n) between 1.26-1.78 for 400>T>260 K. The forward I-V data strongly indicated that the current was controlled by the generation-recombination (GR) and thermionic emission (TE) mechanisms for temperature in the range 260-400 K. From the temperature variation of the TE reverse saturation current, the values of (0.75±0.05)V and the (4.5±0.5)×10-5 Acm-2K-2 for the zero bias zero temperature barrier height (φoo) and modified effective Richardson constant were obtained. The 1 MHz capacitance-voltage (C-V) data for 260 K < T < 400 K was analyzed in terms of the C-2-V relation including the effect of interface layer to obtain more realistic values of the barrier height (φbo). The temperature dependence of φbo was described the relation φbo =(0.86±10.03) - (8.4±0.7)×l0-4T. The values of φoo, obtained by the I-V and C-V techniques agreed well.

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