HIGH TEMPERATURE SUPERCONDUCTOR GdBa2Cu3O7−x INVESTIGATION BY OPTICALLY THERMOSTIMULATED EXOEMISSION (OTSEE) METHOD

1989 ◽  
Vol 03 (13) ◽  
pp. 987-991
Author(s):  
J. CHRZANOWSKI ◽  
B. SUJAK ◽  
I. BENZAR ◽  
A. J. ZALESKI ◽  
M. CISZEK ◽  
...  

Measurements of optically-thermostimulated electron emission from the high temperature superconductor GdBa 2 Cu 3 O 7−x were performed for the temperature range of 65–300 K. Changes in the intensity of the emitted electrons with temperature were observed. OTSEE peak at about 230 K is ascribed to structural changes in the sample, which are reflected at surface layer.

2020 ◽  
Vol 62 (7) ◽  
pp. 1008
Author(s):  
С.В. Семенов ◽  
Д.А. Балаев

Abstract A model for describing the magnetoresistance behavior in a granular high-temperature superconductor (HTS) that has been developed in the last decade explains a fairly extraordinary form of the hysteretic R ( H ) dependences at T = const and their hysteretic features, including the local maximum, the negative magnetoresistance region, and the local minimum. In the framework of this model, the effective field B _eff in the intergrain medium has been considered, which represents a superposition of the external field and the field induced by the magnetic moments of HTS grains. This field can be written in the form B _eff( H ) = H + 4πα M ( H ), where M ( H ) is the experimental field dependence of the magnetization and α is the parameter of crowding of the magnetic induction lines in the intergrain medium. Therefore, the magnetoresistance is a function of not simply an external field, but also the “internal” effective field R ( H ) = f ( B _eff( H )). The magnetoresistance of the granular YBa_2Cu_3O_7 – δ HTS has been investigated in a wide temperature range. The experimental hysteretic R ( H ) dependences obtained in the high -temperature range (77–90 K) are well explained using the developed model and the parameter α is 20–25. However, at a temperature of 4.2 K, no local extrema are observed, although the expression for B _eff( H ) predicts them and the parameter α somewhat increases (~30–35) at this temperature. An additional factor that must be taken into account in this model can be the redistribution of the microscopic current trajectories, which also affects the dissipation in the intergrain medium. At low temperatures under the strong magnetic flux compression (α ~ 30–35), the microscopic trajectories of the current I _ m can change and tunneling through the neighboring grain is preferred, but the angle between I _ m and B _eff will be noticeably smaller than 90°, although the external (and effective) field direction is perpendicular to the macroscopic current direction.


2009 ◽  
Vol 65 (6) ◽  
pp. 770-781 ◽  
Author(s):  
Tatiana N. Drebushchak ◽  
Yury A. Chesalov ◽  
Elena V. Boldyreva

Structural changes in the high-temperature ∊-polymorph of chlorpropamide, 4-chloro-N-(propylaminocarbonyl)benzenesulfonamide, C10H13ClN2O3S, on cooling down to 100 K and on reverse heating were followed by single-crystal X-ray diffraction. At temperatures below 200 K the phase transition into a new polymorph (termed the ∊′-form) has been observed for the first time. The polymorphic transition preserves the space group Pna21, is reversible and is accompanied by discontinuous changes in the cell volume and parameters, resulting from changes in molecular conformation. As shown by IR spectroscopy and X-ray powder diffraction, the phase transition in a powder sample is inhomogeneous throughout the bulk, and the two phases co-exist in a wide temperature range. The cell parameters and the molecular conformation in the new polymorph are close to those in the previously known α-polymorph, but the packing of the z-shaped molecular ribbons linked by hydrogen bonds inherits that of the ∊-form and is different from the packing in the α-polymorph. A structural study of the α-polymorph in the same temperature range has revealed no phase transitions.


Author(s):  
N. Rozhanski ◽  
A. Barg

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.


Author(s):  
P. Moine ◽  
G. M. Michal ◽  
R. Sinclair

Premartensitic effects in near equiatomic TiNi have been pointed out by several authors(1-5). These include anomalous contrast in electron microscopy images (mottling, striations, etc. ),diffraction effects(diffuse streaks, extra reflections, etc.), a resistivity peak above Ms (temperature at which a perceptible amount of martensite is formed without applied stress). However the structural changes occuring in this temperature range are not well understood. The purpose of this study is to clarify these phenomena.


Alloy Digest ◽  
1967 ◽  
Vol 16 (10) ◽  

Abstract NICKELVAC L-605 is a double vacuum melted, cobalt-base alloy for high temperature applications. It is recommended for highly stressed parts operating in the temperature range of 1700 to 2000 F. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as creep and fatigue. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Co-53. Producer or source: Allvac Metals Company, A Teledyne Company.


2020 ◽  
Vol 12 ◽  
Author(s):  
Fang Wang ◽  
Jingkai Wei ◽  
Caixia Guo ◽  
Tao Ma ◽  
Linqing Zhang ◽  
...  

Background: At present, the main problems of Micro-Electro-Mechanical Systems (MEMS) temperature detector focus on the narrow range of temperature detection, difficulty of the high temperature measurement. Besides, MEMS devices have different response characteristics for various surrounding temperature in the petrochemical and metallurgy application fields with high-temperature and harsh conditions. To evaluate the performance stability of the hightemperature MEMS devices, the real-time temperature measurement is necessary. Objective: A schottky temperature detector based on the metal/n-ZnO/n-Si structures is designed to measure high temperature (523~873K) for the high-temperature MEMS devices with large temperature range. Method: By using the finite element method (FEM), three different work function metals (Cu, Ni and Pt) contact with the n-ZnO are investigated to realize Schottky. At room temperature (298K) and high temperature (523~873K), the current densities with various bias voltages (J-V) are studied. Results: The simulation results show that the high temperature response power consumption of three schottky detectors of Cu, Ni and Pt decreases successively, which are 1.16 mW, 63.63 μW and 0.14 μW. The response temperature sensitivities of 6.35 μA/K, 0.78 μA/K, and 2.29 nA/K are achieved. Conclusion: The Cu/n-ZnO/n-Si schottky structure could be used as a high temperature detector (523~873K) for the hightemperature MEMS devices. It has a large temperature range (350K) and a high response sensitivity is 6.35 μA/K. Compared with traditional devices, the Cu/n-ZnO/n-Si Schottky structure based temperature detector has a low energy consumption of 1.16 mW, which has potential applications in the high-temperature measurement of the MEMS devices.


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