THE CHARACTERISTIC DIODE PARAMETERS IN Ti/p-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE MEASUREMENT TEMPERATURE

2016 ◽  
Vol 24 (04) ◽  
pp. 1750052 ◽  
Author(s):  
KADIR EJDERHA ◽  
SEZAI ASUBAY ◽  
NEZIR YILDIRIM ◽  
ÖMER GÜLLÜ ◽  
ABDULMECIT TURUT ◽  
...  
Keyword(s):  
Thermal Evaporation ◽  
Schottky Diodes ◽  
Characteristic Parameters ◽  
Dc Magnetron Sputtering ◽  
Sputtering Deposition ◽  
Text Type ◽  
Current Voltage ◽  
Double Gaussian Distribution ◽  
Standard Deviations ◽  
Limited Depth

The titanium/[Formula: see text]-indium phosphide (Ti/[Formula: see text]-InP) Schottky diodes (SDs) have been prepared by thermal evaporation and DC magnetron sputtering deposition. Then, their current–voltage ([Formula: see text]–[Formula: see text]) characteristics have been measured in the sample temperature range of 100–400[Formula: see text]K with steps of 20[Formula: see text]K. The characteristic parameters of both Ti/[Formula: see text]-InP SDs have been compared with each other. The barrier height (BH) values of 0.824 and 0.847 at 300[Formula: see text]K have been obtained for the sputtered and the evaporated SDs, respectively. This low BH value for the sputtered SD has been attributed to some defects introduced by the sputtered deposition technique over a limited depth in to the [Formula: see text]-type substrate. The BH of the evaporated and sputtered diodes has decreased with the standard deviations of 58 and 64[Formula: see text]mV obeying to double-Gaussian distribution (GD) in 220–400[Formula: see text]K range, respectively, and it has seen a more sharper reduction for the BHs with the standard deviations of 93 and 106 mV in 100–220[Formula: see text]K range. The Richardson constant values of 89.72 and 53.24[Formula: see text]A(Kcm)[Formula: see text] (in 220–400[Formula: see text]K range) for the evaporated and sputtered samples, respectively, were calculated from the modified ln([Formula: see text]/[Formula: see text]/2[Formula: see text] vs (kT)[Formula: see text] curves by GD of the BHs. The value 53.24[Formula: see text]A(Kcm)[Formula: see text] for the sputtered sample in high temperatures range is almost the same as the known Richardson constant value of 60[Formula: see text]A(Kcm)[Formula: see text] for [Formula: see text]-type InP.

Time Dependence of Current–Voltage Characteristics of Pb/p-Si Schottky Diode under Hydrostatic Pressure

2011 ◽  
Vol 66 (8-9) ◽  
pp. 576-580 ◽  
Author(s):  
Nazim Ucar ◽  
Ahmet Faruk Özdemira ◽  
Durmus Ali Aldemira ◽  
Güven Çankayab
Keyword(s):  
Hydrostatic Pressure ◽  
Barrier Height ◽  
Ideality Factor ◽  
Interfacial Layer ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Pressure Coefficient ◽  
Characteristic Parameters ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract The effect of time on the characteristic parameters of Pb/p-Si Schottky diodes has been presented as a function of hydrostatic pressure. Current-voltage curves of the Pb=p-Si Schottky diodes have been measured at immediate, 15, 30, 60, and 120 min intervals under 1, 2, and 4 kbar hydrostatic pressure. It has been found that the values of the ideality factor have been approximately unchanged with increasing time. On the other hand, the barrier height of the Pb=p-Si structure slowly increase with increasing time, while these parameters also change with hydrostatic pressure. The diode shows nonideal current-voltage behaviour with an ideality factor greater than unity that can be ascribed to the interfacial layer and the interface states. In addition, the Schottky barrier height increases with a linear pressure coefficient of 92 meV=kbar, which is higher than the pressure coefficient of the silicon fundamental band gap.

Current–Voltage Characterization of Transparent ITO/ZnO:B/ZnO:(Al + In)/Ag Schottky Diodes Prepared with Multilayer Films by Sol–Gel Deposition

2019 ◽  
Vol 49 (3) ◽  
pp. 1993-2002
Author(s):  
Manuel A. Hernández-Ochoa ◽  
Humberto Arizpe-Chávez ◽  
Rafael Ramírez-Bon ◽  
Alain Pérez-Rodríguez ◽  
Manuel Cortez-Valadez ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Sol Gel ◽  
Multilayer Films ◽  
Current Voltage

A note on current-voltage measurements of n-type and p-type Pd2Si Schottky diodes

1991 ◽  
Vol 34 (2) ◽  
pp. 215-216 ◽  
Author(s):  
Vincent W.L. Chin ◽  
John W.V. Storey ◽  
Martin A. Green
Keyword(s):  
Schottky Diodes ◽  
Current Voltage ◽  
P Type

GROWTH OF ANTIMONY DOPED ZnO FIBER AND ITS APPLICATION IN DYE SENSITIZED SOLAR CELLS

2010 ◽  
Vol 03 (04) ◽  
pp. 279-283 ◽  
Author(s):  
LEI GUO ◽  
LEI L. KERR
Keyword(s):  
Thermal Evaporation ◽  
Dye Sensitized Solar Cells ◽  
Antimony Oxide ◽  
Dye Sensitized Solar Cell ◽  
Evaporation Process ◽  
Electron Backscattered Diffraction ◽  
Dye Sensitized ◽  
Current Voltage ◽  
Doped Zno ◽  
Sensitized Solar Cells

Antimony doped ZnO (ZnO:Sb) fiber was grown by a simple thermal evaporation process of Zn powder and Sb2O3 . Scanning Electron Microscopy (SEM) shows that the grown fiber reaches more than 70 μm, which is the longest ZnO fiber reported in literature. Electron Backscattered Diffraction (EBSD) study indicates that this crystal is composed of three main phases: antimony doped zinc oxide (ZnO:Sb) , ordonezite (ZnSb2O6) and zinc antimony oxide (Zn7Sb2O12) . The current–voltage (I–V) characteristics demonstrate that the conversion efficiency of dye sensitized solar cell was greatly enhanced by ZnO:Sb fiber.

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Temperature Sensors Based on AlN/4H-SiC Diodes

2021 ◽  
Vol 13 (7) ◽  
pp. 1318-1323
Author(s):  
Myeong-Cheol Shin ◽  
Dong-Hyeon Kim ◽  
Seong-Woo Jung ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Temperature Sensors ◽  
Electrical Characteristics ◽  
Voltage Range ◽  
Radio Frequency Sputtering ◽  
Sensing Applications ◽  
Current Voltage ◽  
Dc Bias

ABSTRACTThis study report on the formation of AlN/SiC heterostructure Schottky diodes for use of temperature sensing applications enhance the sensitivity. We analyzed the sensitivity of the AlN/SiC Schottky diode sensor depending on the annealing temperature. AlN/4H-SiC Schottky diodes were fabricated by depositing aluminum nitride (AlN) thin film on 4H/SiC by radio frequency sputtering. The forward bias electrical characteristics were determined under DC bias (in the voltage range of 0–1.5 V). The ideality factor, barrier height, and sensitivity were derived through current–voltage–temperature (I–V–T) measurements in the temperature range of 300–500 K. The sensitivity of the AlN/4H-SiC Schottky barrier diode ranged from 2.5–5.0 mV/K.

Anomalous Scatter of Forward Current-Voltage Characteristics of He+-Irradiated Ni/4H-SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 749-752 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Viktor V. Zelenin ◽  
Alexei N. Kuznetsov ◽  
Joseph Tringe ◽  
Albert V. Davydov ◽  
...  
Keyword(s):  
Series Resistance ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Defect Structures ◽  
Induced Current ◽  
Forward Current ◽  
Current Voltage ◽  
Before And After ◽  
Current Voltage Characteristics

A study of forward current-voltage characteristics of Ni/4H-SiC Schottky diodes (SDs) before and after irradiation with He+ ions revealed features that characterize defect structures and reveal the degradation mechanism of the diodes. These features are the presence of excess currents of certain type in the unirradiated SDs, their appearance in forward-biased originally ideal SDs, and a >10 orders of magnitude scatter of the series resistance of the SDs upon their irradiation with He+ ions. A model of localized defect-induced current paths (shunts) in the form of unintentionally produced SDs with the substrate is suggested.

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