IMPROVEMENT IN STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ITO FILM THROUGH AlN AND HfO2 BUFFER LAYERS

2021 ◽  
pp. 2150094
Author(s):  
NASER M. AHMED ◽  
NOOR HUMAM SULAIMAN ◽  
MAHIR FARIS ABDULLAH ◽  
ASMAA SOHEIL NAJM ◽  
NAVEED AFZAL ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Indium Tin Oxide ◽  
Laser Annealing ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Film Deposition ◽  
Buffer Layers ◽  
Ito Film ◽  
Ito Glass ◽  
Ito Films

Indium Tin Oxide (ITO) films were deposited on glass substrate using radiofrequency (RF) magnetron sputtering technique. To improve the physical characteristics of the ITO film, AlN and HfO2 buffer layers were deposited on glass prior to the film deposition. The ITO/glass, ITO/AlN/glass and ITO/HfO2/glass films were annealed using CO2 laser and electrical oven heating methods. The crystallinity of the ITO film was improved due to the incorporation of AlN and HfO2 buffer layers and also by the post-deposition annealing process. The optical transmittance of the ITO was also increased due to the presence of the buffer layers. Similarly, the annealed ITO films grown on buffer layers exhibited lower values of the sheet resistance as compared to the film deposited without buffer layers. The laser annealing technique was more found to be more effective in reducing the ITO sheet resistance.

scholarly journals Study of Sputtered ITO Films on Flexible Invar Metal Foils for Curved Perovskite Solar Cells

Metals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 120 ◽  
Author(s):  
Hae-Jun Seok ◽  
Han-Ki Kim
Keyword(s):  
Solar Cells ◽  
Sheet Resistance ◽  
Room Temperature ◽  
Perovskite Solar Cells ◽  
Optical Transmittance ◽  
Metal Substrate ◽  
Metal Foil ◽  
Ito Film ◽  
Bending Radius ◽  
Ito Films

We have studied characteristics of tin-doped indium oxide (ITO) films sputtered on flexible invar metal foil covered with an insulating SiO2 layer at room temperature to use as transparent electrodes coated substrates for curved perovskite solar cells. Sheet resistance, optical transmittance, surface morphology, and microstructure of the ITO films on SiO2/invar substrate are investigated as a function of the thickness from 50 to 200 nm. The optimized ITO film exhibits a low sheet resistance of 50.21 Ohm/square and high optical transmittance of up to 94.31% even though it is prepared at room temperature. In particular, high reflectance of invar metal substrate could enhance the power conversion efficiency of curved perovskite solar cell fabricated on the ITO/SiO2/invar substrate. In addition, critical bending radius of the 150 nm-thick ITO film is determined by lab-designed outer and inner bending tests to show feasibility as flexible electrode. Furthermore, dynamic fatigue test is carried out to show flexibility of the ITO film on invar metal substrate. This suggests that the ITO/SiO2/invar substrate can be applied as flexible electrodes and substrates for curved perovskite solar cells.

NANO-INDENTER MECHANICAL PROPERTIES OF ITO/GLASS THIN FILM DEPOSITED BY DC MAGNETRON SPUTTERING METHOD AT LOW TEMPERATURE

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4322-4327
Author(s):  
HAN-KI YOON ◽  
DO HYOUNG KIM ◽  
DO HOON SHIN ◽  
RI-ICHI MURAKAMI
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Optical Transmittance ◽  
Experimental Result ◽  
Dc Magnetron Sputtering ◽  
Ito Film ◽  
Ito Glass ◽  
Sputtering Pressure ◽  
Ito Films

The ITO film was deposited onto the glass substrate at room temperature by the inclination opposite target type DC magnetron sputtering equipment. An indium tin alloy ( In 2 O 3(90 wt %)+ SnO 2(10 wt %)) target was used. The Total sputtering pressure was varied from 2.6×10-1 to 8.3×10-1 Pa . The experimental result showed that the ITO film produced at room temperature had microstructure in which a X-ray diffraction peak is not clear, regardless of the total sputtering pressure. All the films showed a high optical transmittance. The ITO films prepared at low pressures gave low electrical resistivity. The elastic modulus and hardness of ITO films on various total sputtering pressures were increased with decreasing the total sputtering pressure and this tendency was similar to the change in electrical resistivity with decreasing the total sputtering pressure.

Analysis of ITO Films Deposited on Various Polymer Substrates for High-Resolution Plastic Film LCDs

2001 ◽  
Vol 685 ◽  
Author(s):  
Jeong In Han ◽  
Sung Kyu Park ◽  
Chan Jae Lee ◽  
Won Keun Kim ◽  
Min Gi Kwak
Keyword(s):  
Mechanical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Optical Microscope ◽  
Polymer Substrate ◽  
Buffer Layers ◽  
Polymer Substrates ◽  
Ito Films

AbstractThe electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates are polyethersulfone(PES), polycarbonate(PC), polyethylene terephthalate(PET) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, in addition to the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties. They indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjustment of oxygen partial pressure and thermal annealing above 180 °C. As the results, we obtained 20-25 Ω/ of ITO films with a good transmittance (above 80%) under 0.2 % oxygen contents and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have rather high electrical resistance (40-45 Ω/ ) but have improved optical (more than 85%) and mechanical characteristics compared to the counterparts.

Influence of Al2O3 Buffer Layers on the Properties of Indium–Tin Oxide Films on PET Substrate by RF-Magnetron Sputtering

2011 ◽  
Vol 675-677 ◽  
pp. 1209-1212
Author(s):  
Wu Tang ◽  
Yi Peng Chao ◽  
Yong Si Fang ◽  
Xiao Long Weng ◽  
Long Jiang Deng
Keyword(s):  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Amorphous Structure ◽  
Buffer Layers ◽  
Visible Range ◽  
Ito Film ◽  
Pet Substrate ◽  
Ito Films

Indium Tin Oxide (ITO) films on PET substrate sandwiching Al2O3 buffer layers with different thickness have been prepared by magnetron sputtering at low deposition temperature. The crystal structures, electrical and optical properties of ITO films have been investigated by XRD, four-point probe technology and UV-Vis spectrophotometer as a function of different Al2O3 buffer layers thickness, respectively. XRD reveals that there is an amorphous structure in ITO films with no buffer layer. However, ITO films became crystalline after sandwiching the buffer layer. It can be found that there are two major peaks, (222) and (400) of ITO film. A smallest resistivity of 3.53×10-4 Ω.cm was obtained for ITO film with Al2O3 buffer layers thickness 75nm. The average transmittance of ITO/Al2O3/PET films in the visible range of 400-760nm wavelength was around 80%. It can be conclude that the (222) orientation of ITO film is more in favor of low resistivity.

scholarly journals The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
Shih-Hao Chan ◽  
Meng-Chi Li ◽  
Hung-Sen Wei ◽  
Sheng-Hui Chen ◽  
Chien-Cheng Kuo
Keyword(s):  
Sheet Resistance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Transparent Conductive Films ◽  
Sensor Applications ◽  
Conductive Films ◽  
Touch Sensor ◽  
Ito Films

This study aims to discuss the sheet resistance of ultrathin indium tin oxide (ITO) transparent conductive films during the postannealing treatment. The thickness of the ultrathin ITO films is 20 nm. They are prepared on B270 glass substrates at room temperature by a direct-current pulsed magnetron sputtering system. Ultrathin ITO films with high sheet resistance are commonly used for touch panel applications. As the annealing temperature is increased, the structure of the ultrathin ITO film changes from amorphous to polycrystalline. The crystalline of ultrathin ITO films becomes stronger with an increase of annealing temperature, which further leads to the effect of enhanced Hall mobility. A postannealing treatment in an atmosphere can enhance the optical transmittance owing to the filling of oxygen vacancies, but the sheet resistance rises sharply. However, a higher annealing temperature, above 250°C, results in a decrease in the sheet resistance of ultrathin ITO films, because more Sn ions become an effective dopant. An optimum sheet resistance of 336 Ω/sqr was obtained for ultrathin ITO films at 400°C with an average optical transmittance of 86.8% for touch sensor applications.

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

Properties of Indium Tin Oxide Films Prepared by Two-Targets Magnetron Sputtering

2014 ◽  
Vol 997 ◽  
pp. 337-340
Author(s):  
Jian Guo Chai
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optical Transmittance ◽  
Visible Range ◽  
Glass Substrates ◽  
Optimized Conditions ◽  
Tin Oxide Films ◽  
Ito Films

Indium tin oxide (ITO) films were deposited on glass substrates by magnetron sputtering. Properties of ITO films showed a dependence on substrate temperature. With an increasing in substrate temperature, the intensity of XRD peak increased and the grain size showed an evident increasing. The results show that increasing substrate temperature remarkably improves the characteristics of the films. The sheet resistance of 10 Ω/sq and the maximum optical transmittance of 90% in the visible range with optimized conditions can be achicved. The results of experiment demonstrate that high-quality films have been achieved by this technique.

GROWTH OF AZO FILMS ON BUFFER LAYERS BY RF MAGNETRON SPUTTERING

2010 ◽  
Vol 24 (31) ◽  
pp. 3033-3040 ◽  
Author(s):  
C. W. CHEN ◽  
C. H. TSENG ◽  
C. Y. HSU ◽  
C. P. CHOU ◽  
K. H. HOU
Keyword(s):  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Sheet Resistance ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Visible Range ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Al Thin Film

Al 2 O 3-doped zinc oxide (in AZO, the Al 2 O 3 contents are approximately 2 wt.%) films have been grown by radio frequency (RF) magnetron sputtering at room temperature under varied sputtering pressures ranging from 3.5–15 mTorr. The electrical resistivity of AZO films is about 2.22×10-3 Ωcm (sheet resistance ~ 89 Ω/square for a thickness ~ 250 nm), and the visible range transmittance is about 80% at the argon sputtering pressure of 15 mTorr and a RF power of 100 W. This study analyzes the structural, morphological, electrical and optical properties of AZO thin films grown on soda-lime glass substrate with 2, 5, and 10 nm thick Al buffer layers (and SiO 2 buffer). For the films deposited on the 2 nm thick Al buffer layer, we obtained a c-axis-oriented AZO/ Al thin film on glass with the XRD full-width at half maximum (FWHM) of 0.31 and root mean square (RMS) surface roughness of about 3.22 nm. The lowest resistivity of 9.46×10-4 Ωcm (sheet resistance ~ 37.87 Ω/square for a thickness ~ 250 nm) and a high transmittance (80%) were obtained by applying a 2 nm thick Al buffer layer. In contrast, the resistivity was slightly increased by applying the SiO 2 buffer layer.

Structural and Optical Properties of InSnO3 Sol-Gel Coatings to Use in Windows Glass Buildings

2010 ◽  
Vol 168-170 ◽  
pp. 2348-2351
Author(s):  
Lazaro De Jesus Dominguez Gallegos ◽  
Angélica Silvestre López Rodríguez ◽  
Pio Sifuentes Gallardo ◽  
Miguel Angel Hernández Rivera ◽  
María Guadalupe Garnica Romo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Indium Tin Oxide ◽  
Sol Gel ◽  
Visible Region ◽  
Optical Transmittance ◽  
Indium Chloride ◽  
Glass Substrates ◽  
Tin Chloride ◽  
Ito Thin Films ◽  
Ito Films

Indium stannate (InSnO3) films doping with small amounts of copper are made highly useful as architectural window coatings. Indium-tin-oxide (ITO) has attracted intense interest due to some of its unique characteristics; it has high optical transmittance in the visible region, low electric resistivity, and chemical stability. Therefore, ITO thin films have been found to play an important role in opto-electronic applications. In this work, uniform and transparent ITO films were deposited onto glass substrates using a sol-gel process. The initial sols were prepared by mixing solutions of indium chloride prepared in anhydrous ethanol with tin chloride and mechanically stirring and refluxed 2 hours and aged 2 week, the resultant mixture until a clear and sticky coating sol was obtained. The glass substrates were spin-coated and annealed at 500 °C. Because annealing conditions affect the microstructures, the properties of the resultant ITO films can be controlled. The optical transmittance of 200 nm thick ITO film was more than 80% in the visible region. The surface morphology examined by SEM appears to be uniform over large surface areas. The structural, microstructural and optical properties of the coatings and powders made from the sols were extensively characterized by using XRD, AFM and spectrophotometer techniques

Optical and Electrical Properties of Transparent Conduction ITO Films Prepared by Dip-Coating Process

2006 ◽  
Vol 11-12 ◽  
pp. 171-174
Author(s):  
Sheng Jie Piao ◽  
Jia Xiang Liu ◽  
Nan Zhang
Keyword(s):  
Sheet Resistance ◽  
Soda Lime ◽  
Heat Treating ◽  
Dip Coating ◽  
Float Glass ◽  
X Ray Diffraction ◽  
Ito Film ◽  
Dip Coating Technique ◽  
Resistance Value ◽  
Ito Films

Transparent conductive ITO films were fabricated on soda lime float glass substrate by colloid dip-coating technique from indium metal ingots and hydrous tin(IV) chloride. It was systematically studied that the effect of the electrical, the structure and optical properties of the ITO doped Sn in quantitative change and different heat-treating process by XRD, UV-VIS spectrophotometer and four-probe instrument. The results indicated that only cubic In2O3 phase was observed from the X-ray diffraction; with the amount of doped Snincreasing, the sheet resistance of ITO was up to minimumand thenincreased. The sheet resistance value decreased with the increase of the annealing temperature and holding time; the transmissivity of the ITO films was higher than 80% in 550 nm wavelength. The lowest sheet resistance value of ITO film which was 300nm thick was 153 ohms per square, which wasannealed at 600°C for 1h and doped Sn 10% (wt).

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