TWO-DIMENSIONAL SILICON-BASED PHOTONIC CRYSTAL SLAB WITH PARTIAL AIR-BRIDGE

2006 ◽  
Vol 05 (06) ◽  
pp. 683-687 ◽  
Author(s):  
JIE TIAN ◽  
SHOU-ZHEN HAN ◽  
BING-YING CHENG ◽  
SHUAI FENG ◽  
ZHI-YUAN LI ◽  
...  

We describe a fabrication process of the near-infrared two-dimensional photonic crystal (PC) slab, which is sustained by part of the silica layer underneath the slab and forms a partly air-bridged type. The process involves focused ion beam (FIB) direct write following the selective wet etching of silicon on isolator (SOI) structures. By control the time of dissolving of silica layer in SOI, we successfully fabricated the sample and measured its transmittance spectrum. It is found that the observed spectrum is consistent with the theoretical band structure with FDTD method. For there is partly silica layer remained to support the air-bridge slab, the PC can be fabricated with a large area. If we change the support material under the slab, we might be able to fabricate PC laser with this kind of structure.

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2182 ◽  
Author(s):  
Chiara Valsecchi ◽  
Luis Enrique Gomez Armas ◽  
Jacson Weber de Menezes

Several fabrication techniques are recently used to produce a nanopattern for sensing, as focused ion beam milling (FIB), e-beam lithography (EBL), nanoimprinting, and soft lithography. Here, interference lithography is explored for the fabrication of large area nanohole arrays in metal films as an efficient, flexible, and scalable production method. The transmission spectra in air of the 1 cm2 substrate were evaluated to study the substrate behavior when hole-size, periodicity, and film thickness are varied, in order to elucidate the best sample for the most effective sensing performance. The efficiency of the nanohole array was tested for bulk sensing and compared with other platforms found in the literature. The sensitivity of ~1000 nm/RIU, achieved with an array periodicity in the visible range, exceeds near infrared (NIR) performances previously reported, and demonstrates that interference lithography is one of the best alternative to other expensive and time-consuming nanofabrication methods.


2006 ◽  
Vol 05 (06) ◽  
pp. 743-746
Author(s):  
SHOUZHEN HAN ◽  
JIE TIAN ◽  
CHENG REN ◽  
XINGSHENG XU ◽  
ZHIYUAN LE ◽  
...  

The abstract should summarize the context, content and conclusions of the paper in less than 200 words. We fabricated a two-dimensional Y-branch photonic crystal waveguide in the near infrared region by using focused ion beam etching and depositing system. The light guide characters of the waveguide were measured for three different spaces between branches. Field intensity distributions of TE polarized wave in the branches were simulated by using the transfer matrix method. Both the theoretical and experimental results show that the shortest space between branches of the photonic crystal waveguide is about 1.4 times wavelength of transmitted light. If the space became shorter, the light in the two branches would couple to each other seriously. This result might be helpful for the design of compact wave demultiplexer and all-optical integrated circuits.


2002 ◽  
Vol 749 ◽  
Author(s):  
H.D. Wanzenboeck ◽  
S. Harasek ◽  
H. Langfischer ◽  
E. Bertagnolli

ABSTRACTChemical vapor deposition (CVD) is a versatile deposition technique for both dielectrics and metals. CVD is based upon the adsorption of a volatile species from the gas phase and the decomposition of the adsorbed molecules on the sample surface resulting in the deposition of solid material. In contrast to thermal CVD or plasma assisted CVD used for large area coatings this work focuses on a method for locally confined deposition. A focused energetic beam is used to provide the necessary activation energy for CVD. With a focused beam material could be deposited locally within a strictly confined area down to the nanometer range. The deposition of silicon oxide microstructures utilizing two precursor gases - siloxane and oxygen - was performed by direct-write nanolithography. For initiating the CVD process energy is introduced by local ion exposure utilizing a scanning focused ion beam (FIB). The influence of the different ion fluxes and the effect of the mixture ratio of precursors were studied. Deliberate changes in the process parameters allowed adjusting the physical properties and the chemical composition of the solid silicon oxide. Process control allows tailoring of material properties according to requirements of the application.


2005 ◽  
Vol 78-79 ◽  
pp. 417-421 ◽  
Author(s):  
T. Stomeo ◽  
G. Visimberga ◽  
M.T. Todaro ◽  
A. Passaseo ◽  
R. Cingolani ◽  
...  

Author(s):  
Alexander Richards ◽  
Matthew Weschler ◽  
Michael Durller

Abstract To help solve the navigational problem, i.e., being able to successfully locate a circuit for probing or editing without destroying chip functionality, a near-infrared (NIR), near-ultraviolet (NUV), and visible spectrum camera system was developed that attaches to most focused ion beam (FIB) or scanning electron microscope vacuum chambers. This paper reviews the details of the design and implementation of the NIR/NUV camera system, as instantiated upon the FEI FIB 200, with a particular focus on its use for the visualization of buried structures, and also for non-destructive real time area of interest location and end point detection. It specifically considers the use of the micro-optical camera system for its benefit in assisting with frontside and backside circuit edit, as well as other typical FIB milling activities. The quality of the image obtained by the IR camera rivals or exceeds traditional optical based imaging microscopy techniques.


2010 ◽  
Vol 96 (26) ◽  
pp. 262511 ◽  
Author(s):  
Pashupati Dhakal ◽  
G. McMahon ◽  
S. Shepard ◽  
T. Kirkpatrick ◽  
J. I. Oh ◽  
...  

2013 ◽  
Vol 1530 ◽  
Author(s):  
A. Bendavid ◽  
L. Wieczorek ◽  
R. Chai ◽  
J. S. Cooper ◽  
B. Raguse

ABSTRACTA large area nanogap electrode fabrication method combinig conventional lithography patterning with the of focused ion beam (FIB) is presented. Lithography and a lift-off process were used to pattern 50 nm thick platinum pads having an area of 300 μm × 300 μm. A range of 30-300 nm wide nanogaps (length from 300 μm to 10 mm ) were then etched using an FIB of Ga+ at an acceleration voltage of 30 kV at various beam currents. An investigation of Ga+ beam current ranging between 1-50 pA was undertaken to optimise the process for the current fabrication method. In this study, we used Monte Carlo simulation to calculate the damage depth in various materials by the Ga+. Calculation of the recoil cascades of the substrate atoms are also presented. The nanogap electrodes fabricated in this study were found to have empty gap resistances exceeding several hundred MΩ. A comparison of the gap length versus electrical resistance on glass substrates is presented. The results thus outline some important issues in low-conductance measurements. The proposed nanogap fabrication method can be extended to various sensor applications, such as chemical sensing, that employ the nanogap platform. This method may be used as a prototype technique for large-scale fabrication due to its simple, fast and reliable features.


Sign in / Sign up

Export Citation Format

Share Document