SYNTHESIS OF ALLOY METAL NANOCLUSTERS IN SILICA GLASS BY SEQUENTIAL ION IMPLANTATION

2007 ◽  
Vol 06 (06) ◽  
pp. 423-430 ◽  
Author(s):  
B. JOSEPH ◽  
H. P. LENKA ◽  
P. K. KUIRI ◽  
D. P. MAHAPATRA ◽  
R. KESAVAMOORTHY
Keyword(s):  
Ion Implantation ◽  
Silica Glass ◽  
Metallic Nanoparticles ◽  
Rutherford Backscattering Spectrometry ◽  
Low Frequency ◽  
Peak Position ◽  
Negative Ion ◽  
Metal Nanoclusters ◽  
Cross Sectional ◽  
The Matrix

High fluence low energy negative ion implantation has been used to synthesize embedded metal nanoclusters of Au , Ag and Sb in silica glass. The Au - and Ag -implanted samples showed peaks, corresponding to surface plasmon resonance (SPR) in the optical absorption (OA) spectra, confirming the formation of metallic nanoparticles in the matrix. No SPR peak was observed in case of Sb -implanted samples which is attributed to the absence of pure metallic precipitates which could be detected in the OA spectrum. Low frequency Raman scattering (LFRS) measurements also confirm this. Cross-sectional transmission electron microscopy has been used to infer about the size distribution of the nanoparticles. Sequential implantations of Au and Ag or Au and Sb have been found to result in SPR peaks at locations in between those for nanoparticles of the constituent atoms, indicating the formation of alloy nanoparticles in the system. In case of the Au + Ag system, Rutherford backscattering spectrometry has been used to infer about the composition of the nanoparticles in terms of the concentrations of the metallic constituents. A direct, one-to-one correspondence between the SPR peak position and composition has been observed.

Characterization of Nanoclusters in MgO Created by Means of Ion Implantation.

2003 ◽  
Vol 792 ◽  
Author(s):  
M.A. van Huis ◽  
A. van Veen ◽  
H. Schut ◽  
B.J. Kooi ◽  
J.Th.M. De Hosson
Keyword(s):  
Optical Absorption ◽  
Ion Implantation ◽  
Noble Gas ◽  
Optical Absorption Spectroscopy ◽  
Metal Nanoclusters ◽  
Absorption Bands ◽  
Cross Sectional ◽  
Salt Structure ◽  
Scherrer Formula ◽  
Gas Clusters

ABSTRACTMetal nanoclusters (NCs) of lithium, zinc, silver and gold embedded in MgO were created by means of ion implantation of Li, Zn, Ag and Au ions into single crystals of MgO(100) and subsequent thermal annealing. Nanoclusters of the compound semiconductor CdSe were obtained by implantation of both Cd and Se ions. Solid noble gas clusters were formed by Kr ion implantation. Optical and structural properties of the NCs were investigated using optical absorption spectroscopy (OAS), high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The mean nanocluster size is estimated from the broadening of the Mie plasmon optical absorption bands using the Doyle formula. These results are compared with the NC size as obtained from XRD (using the Scherrer formula) and from direct XTEM observations. The three methods are found to be in reasonable agreement with a mean size of 4.0 and 10 nm found for the Au and Ag clusters, respectively. Using TEM observations, the relative interface energies of MgO//Au and MgO//Ag interfaces are also determined. In the case of MgO//Au, they are found not to be in agreement with theoretical predictions in the literature. CdSe nanoclusters were found to adopt different crystal structures dependent on the size. Small ones (<5 nm) appear to have a rock salt structure, larger ones the sphalerite structure. The solid krypton NC's are under high pressure. The pressure of individual Krypton bubbles was determined from the moiré fringes

Surface modification of silica glass by CHF3 plasma treatment and carbon negative-ion implantation for cell pattern adhesion

2011 ◽  
Vol 206 (5) ◽  
pp. 900-904 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Piyanuch Sommani ◽  
Yuichiro Hayashi ◽  
Hiroyuki Kojima ◽  
Hiroko Sato ◽  
...  
Keyword(s):  
Surface Modification ◽  
Ion Implantation ◽  
Plasma Treatment ◽  
Silica Glass ◽  
Negative Ion ◽  
Cell Pattern

Effect of Iodine and Strontium Ion Implantation on the Microstructure of Cubic Zirconia

2000 ◽  
Vol 647 ◽  
Author(s):  
Sha Zhu ◽  
Lumin Wang ◽  
Shixin Wang ◽  
Rodney C. Ewing
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Orientation Relation ◽  
Cross Sectional ◽  
Peak Displacement ◽  
Defect Clusters ◽  
Nano Crystalline ◽  
Transmission Electron ◽  
The Matrix ◽  
Strontium Ion

Abstract200 keV iodine and 400 keV strontium ions have been implanted into YSZ in order to study the effects of fission product incorporation in YSZ as an inert fuel matrix. The ion implantation was conducted at room temperature. The ion fluences reached 1×1021 ions/m2 which gives peak displacement damage levels of ~ 290 dpa for I ion implantation and ~ 200 dpa for Sr ion implantation. The peak concentration reaches ~26 at. % for implanted I ions and ~11.6 at.% for Sr ions. Cross-sectional transmission electron microscopy (TEM) was completed to investigate the microstructure changes caused by the implantation. No evidence of amorphization was detected in both samples although a high density of defect clusters was observed by TEM. Cross-sectional TEM revealed formation of iodine containing voids in I- implanted samples and crystalline precipitates of a few tens of nanometers in Sr-implanted samples after annealing of the implanted sample at 1000°C for 0.5 to 2 hours. The void size increased with increasing annealing time. The nano-crystalline precipitates in Sr-implanted YSZ are isometric SrZrO3 (a≅0.41 nm). The orientation relation between the matrix and precipitates, as determined by selected area diffraction pattern, was: [011]YSZ// [111]SrZrO3 and [200]YSZ// [110]SrZrO3.

Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation

2008 ◽  
Vol 1066 ◽  
Author(s):  
Prakash R. Poudel ◽  
K. Hossain ◽  
J. Li ◽  
B. Gorman ◽  
A. Neogi ◽  
...  
Keyword(s):  
Light Emission ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Ion Source ◽  
Alpha Particles ◽  
Low Energy ◽  
Negative Ion ◽  
Tandem Accelerator ◽  
Cross Sectional ◽  
Osmium Silicide

ABSTRACTLow energy (55 KeV) Osmium ( Os− ) negative ion beam was used to implant (5×1016 atoms/cm2 ) into p-type-Si (100). The implantation was performed with the ion source of a National Electrostatic Corp. 3 MV Tandem accelerator. The implanted sample was subsequently annealed at 650 °C in a gas mixture that was 4% H2 + 96% Ar. Rutherford Backscattering spectrometry (RBS) analysis with 1.5 MeV Alpha particles was used to monitor the precipitate formation. Photoluminescence (PL) measurements were also performed to study possible applications of silicides in light emission. Cross-sectional Scanning Electron Microscopy (X-SEM) was performed for topographic image of the implanted region. RBS along with PL measurements indicate that the presence of osmium silicide (Os2Si3) phase for light emission in the implanted region of the sample.

Metal-Alloy Nanocluster Formation in Silica Glass by Sequential Ion Implantation

2000 ◽  
Vol 647 ◽  
Author(s):  
G. Battaglin ◽  
E. Cattaruzza ◽  
F. Gonella ◽  
F. D'Acapito ◽  
C. de Julian Fernandez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silica Glass ◽  
Analytical Techniques ◽  
Metal Species ◽  
Metal Nanoclusters ◽  
Transition Elements ◽  
Transmission Electron ◽  
Integrated Optical ◽  
Integrated Optical Devices ◽  
X Ray Absorption

AbstractSequential ion implantation of two metal species in silica glass may give rise to the formation of alloy metal nanoclusters. Composite materials with peculiar optical properties can be therefore fabricated, with application in integrated-optical devices. In the presented experiments, different couples of transition elements were sequentially implanted in a silica glass. The resulting systems, in some cases after annealing in either reducing or oxidizing atmosphere, were studied by several analytical techniques, such as transmission electron microscopy and X-ray absorption spectroscopy. The formation of different alloy nanoclusters was evidenced, together with the cluster crystalline structure and the chemical environment of the dopant species.

Ion Beam Synthesis of IrSi3 by 1-MeV Ir Ion Implantation into Si(111)

1993 ◽  
Vol 320 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.- J. Hinneberg
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Processing Parameters ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Nearly Continuous ◽  
Substrate Temperatures ◽  
Different Doses

ABSTRACTThe formation of a Si/IrSi3/Si heterostructurie by 1-MeV Ir ion implantation and subsequent annealing has been studied for different doses (0.1-2.25 × 1017 Ir/cm2), substrate temperatures (450°-600°C) and annealing temperatures (1000°-1200°C) using Rutherford backscattering spectrometry, ion channeling and cross-sectional transmission electron microscopy. The heterostructure formation is observed to depend strongly on the processing conditions. The best structure, nearly continuous and precipitate-free, is obtained by implanting 1.8-2.0× 1017 1r/cm2 at a substrate temperature of 550°C and annealing at 1100°C for 5 h. A stoichiometric IrSi3 layer can also be produced by furnace annealing at 1150°C for 1 h or by rapid-thermal-annealing at 1200°C for 3 min. Other substrate temperatures generally lead to a structure with a discontinuous IrSi3 layer frequently interrupted by large surface precipitates or islands. The origin of these islands, as well as the dependence of the heterostructure on processing parameters, is discussed.

Ion Beam Synthesis of IrSi3 by 1-MeV Ir Ion Implantation into Si(111)

1993 ◽  
Vol 316 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.-J. Hinneberg
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Processing Parameters ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Nearly Continuous ◽  
Substrate Temperatures ◽  
Different Doses

ABSTRACTThe formation of a Si/IrSi3/Si heterostructure by 1-MeV Ir ion implantation and subsequent annealing has been studied for different doses (0.1-2.25 × 1017 Ir/cm2), substrate temperatures (450°-600°C) and annealing temperatures (1000°-1200°C) using Rutherford backscattering spectrometry, ion channeling and cross-sectional transmission electron microscopy. The heterostructure formation is observed to depend strongly on the processing conditions. The best structure, nearly continuous and precipitate-free, is obtained by implanting 1.8-2.0 × 1017 Ir/cm2 at a substrate temperature of 550°C and annealing at 1100°C for 5 h. A stoichiometric IrSi3 layer can also be produced by furnace annealing at 1150°C for 1 h or by rapid-thermal-annealing at 1200°C for 3 min. Other substrate temperatures generally lead to a structure with a discontinuous IrSi3 layer frequently interrupted by large surface precipitates or islands. The origin of these islands, as well as the dependence of the heterostructure on processing parameters, is discussed.

Microanalysis of high-dose oxygen-implanted germanium

1991 ◽  
Vol 49 ◽  
pp. 866-867
Author(s):  
M.J. Kim ◽  
Q. Zhang ◽  
K. Das Chowdhury ◽  
R.W. Carpenter ◽  
J.C. Kelly
Keyword(s):  
Ion Implantation ◽  
High Speed ◽  
Structural Changes ◽  
Rutherford Backscattering Spectrometry ◽  
Microstructural Characterization ◽  
High Dose ◽  
Ion Milling ◽  
Cross Sectional ◽  
Microstructural Investigation ◽  
Implantation Temperature

High-dose ion implantation is being increasingly used to produce buried oxide layers in silicon for high speed CMOS and VLSI applications. Ion implantation into germanium has been used to control optical properties. Germanium implanted with high dose oxygen is a promising material for photodetectors and solar energy converters. In the present study the structural changes in germanium caused by high dose oxygen implantation, giving low reflectivity in the far-UV and visible, were characterized by HREM and high spatial resolution AEM.The single crystal n-type germanium {111} wafers were implanted with O+ ions to doses of lx1017 to 1.5xl018 cm-2 at 45 keV. The implantation temperature was estimated to be about 400°C. The absorption behavior of the implanted samples was measured by Infrared (IR) spectroscopy. The compositional profiles of implanted layers were obtained by Rutherford Backscattering Spectrometry (RBS) and position-resolved EELS. Cross-sectional TEM samples for microstructural characterization were prepared by mechanical polishing and ion milling. A Philips 400ST/FEG analytical microscope was used for nanoprobe experiments, at 100 kV. Microstructural investigation was performed using ISI-002B and JEM-2000FX microscopes, at 200 kV.

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