Ion Beam Synthesis of IrSi3 by 1-MeV Ir Ion Implantation into Si(111)

1993 ◽  
Vol 316 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.-J. Hinneberg
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Processing Parameters ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Nearly Continuous ◽  
Substrate Temperatures ◽  
Different Doses

ABSTRACTThe formation of a Si/IrSi3/Si heterostructure by 1-MeV Ir ion implantation and subsequent annealing has been studied for different doses (0.1-2.25 × 1017 Ir/cm2), substrate temperatures (450°-600°C) and annealing temperatures (1000°-1200°C) using Rutherford backscattering spectrometry, ion channeling and cross-sectional transmission electron microscopy. The heterostructure formation is observed to depend strongly on the processing conditions. The best structure, nearly continuous and precipitate-free, is obtained by implanting 1.8-2.0 × 1017 Ir/cm2 at a substrate temperature of 550°C and annealing at 1100°C for 5 h. A stoichiometric IrSi3 layer can also be produced by furnace annealing at 1150°C for 1 h or by rapid-thermal-annealing at 1200°C for 3 min. Other substrate temperatures generally lead to a structure with a discontinuous IrSi3 layer frequently interrupted by large surface precipitates or islands. The origin of these islands, as well as the dependence of the heterostructure on processing parameters, is discussed.

Ion Beam Synthesis of IrSi3 by 1-MeV Ir Ion Implantation into Si(111)

1993 ◽  
Vol 320 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.- J. Hinneberg
Keyword(s):  
Ion Implantation ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Processing Parameters ◽  
Cross Sectional ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Nearly Continuous ◽  
Substrate Temperatures ◽  
Different Doses

ABSTRACTThe formation of a Si/IrSi3/Si heterostructurie by 1-MeV Ir ion implantation and subsequent annealing has been studied for different doses (0.1-2.25 × 1017 Ir/cm2), substrate temperatures (450°-600°C) and annealing temperatures (1000°-1200°C) using Rutherford backscattering spectrometry, ion channeling and cross-sectional transmission electron microscopy. The heterostructure formation is observed to depend strongly on the processing conditions. The best structure, nearly continuous and precipitate-free, is obtained by implanting 1.8-2.0× 1017 1r/cm2 at a substrate temperature of 550°C and annealing at 1100°C for 5 h. A stoichiometric IrSi3 layer can also be produced by furnace annealing at 1150°C for 1 h or by rapid-thermal-annealing at 1200°C for 3 min. Other substrate temperatures generally lead to a structure with a discontinuous IrSi3 layer frequently interrupted by large surface precipitates or islands. The origin of these islands, as well as the dependence of the heterostructure on processing parameters, is discussed.

Ion Beam Synthesis of IrSi3 by Implantation of 2 MeV Ir Ions+

1992 ◽  
Vol 279 ◽  
Author(s):  
T. P. Sjoreen ◽  
H.-J. Hinneberg ◽  
M. F. Chisholm
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Layer Formation ◽  
Cross Sectional ◽  
Implantation Energy ◽  
Precipitate Coarsening ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Lattice Damage ◽  
Substrate Temperatures

ABSTRACTThe formation of a buried IrSi3 layer in (111) oriented Si by ion implantation and annealing has been studied at an implantation energy of 2 MeV for substrate temperatures of 450–550°C. Rutherford backscattering (RBS), ion channeling and cross-sectional transmission electron microscopy showed that a buried epitaxial IrSi3 layer is produced at 550°C by implanting ≥ 3.4 × 1017 Ir/cm2 and subsequently annealing for 1 h at 1000°C plus 5 h at 1100°C. At a dose of 3.4 × 1017 Ir/cm2, the thickness of the layer varied between 120 and 190 nm and many large IrSi3 precipitates were present above and below the film. Increasing the dose to 4.4 × 1017 Ir/cm2 improved the layer uniformity at the expense of increased lattice damage in the overlying Si. RBS analysis of layer formation as a function of substrate temperature revealed the competition between the mechanisms for optimizing surface crystallinity vs. IrSi3 layer formation. Little apparent substrate temperature dependence was evident in the as-implanted state but after annealing the crystallinity of the top Si layer was observed to deteriorate with increasing substrate temperature while the precipitate coarsening and coalescence improved.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Disordering behavior and helium diffusion in He+ irradiated 6H–SiC

2002 ◽  
Vol 17 (2) ◽  
pp. 271-274 ◽  
Author(s):  
W. Jiang ◽  
W. J. Weber ◽  
C. M. Wang ◽  
Y. Zhang
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Elastic Recoil ◽  
Transmission Electron Microscopy Study ◽  
Cross Sectional ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Detection Analysis ◽  
Transmission Electron

Single-crystal 6H–SiC wafers were irradiated at 300 K with 50 keV He+ ions to fluences ranging from 7.5 to 250 He+/nm2. Ion-channeling experiments with 2.0 MeV He+ Rutherford backscattering spectrometry were performed to determine the depth profile of Si disorder. The measured profiles are consistent with SRIM-97 simulations at and below 45 He+/nm2 but higher than the SRIM-97 prediction at both 100 and 150 He+/nm2. Cross-sectional transmission electron microscopy study indicated that the volume expansion of the material is not significant at intermediate damage levels. Results from elastic recoil detection analysis suggested that the implanted He atoms diffuse in a high-damage regime toward the surface.

Interfacial Strain Reliefs in Epitaxial YBa2Cu3O7–δ Thin Films Grown on SrTiO3 Buffered MGO Substrates

1997 ◽  
Vol 505 ◽  
Author(s):  
Xingtian Cui ◽  
Q. Y Chen ◽  
Yongxiang Guo ◽  
W. K. Chu
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rutherford Backscattering Spectrometry ◽  
Epitaxial Thin Films ◽  
Cross Sectional ◽  
Ybco Films ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Edge Dislocations

ABSTRACTHigh quality YBa2Cu3O7–δ, (YBCO) epitaxial thin films grown on MgO substrate with a strainrelieved SrTiO3 (STO) buffer layer have been investigated by Rutherford backscattering spectrometry (RBS), ion channeling and high resolution cross sectional transmission electron microscopy (XTEM). The in-situ growth of STO buffer layer along with the YBCO films was carried out by pulsed laser ablation. In this work, minimum yield of channeling measurements have shown that a very thin STO buffer layer is sufficient to grow highly crystalline YBCO thin films on MgO substrates. TEM studies showed that the STO layers were strain-relieved by an array of periodic edge dislocations. The YBCO films on STO buffer, as in those grown directly on an STO substrate, evolved from a strained layer to a largely dislocation free area.

Ion Beam Processed Ir/SiGe Structures

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Curello ◽  
R. Gwilllam ◽  
M. Harry ◽  
B. J. Sealy ◽  
T. Rodriguez ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Thermal Reaction ◽  
The Other ◽  
Cross Sectional ◽  
Interface Quality ◽  
Boundary Mixing ◽  
Transmission Electron ◽  
20 Nm

AbstractThe thermal reaction of Ir/SiGe structures following ion implantation induced Ir grain boundary mixing has been studied. The morphology of the final interface has been investigated by Cross-sectional Transmission Electron Microscopy (XTEM) and Rutherford Backscattering Spectrometry (RBS) has been used to detect the redistribution of constituent atoms in the reacted layers. A 20 nm iridium film was deposited in vacuum by electron beam evaporation onto p-Si1-xGex (x = 0.25, 0.33) fully relaxed MBE grown layers. Implantation conditions used were effective in amorphizing the interface-close region of the Ir film and the SiGe substrate. After regrowth, XTEM results show that the interface quality is improved with respect to the material that had not been implanted. RBS results on the other hand show Ge incorporation in the reacted layer to occur in contrast to the non implated case where the Ge piles up at the silicide/SiGe interface. The effect of a second anneal step at higher temperatures (in the range 800°C – 900°C) is also investigated.

Lattice site location of ultra-shallow implanted B in Si using ion beam analysis

2001 ◽  
Vol 669 ◽  
Author(s):  
Hajime Kobayashi ◽  
Ichiro Nomachi ◽  
Susumu Kusanagi ◽  
Fumitaka Nishiyama
Keyword(s):  
Ion Implantation ◽  
Lattice Site ◽  
Rutherford Backscattering Spectrometry ◽  
Hole Concentration ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
High Dose ◽  
Site Location ◽  
Ion Channeling ◽  
Implantation Damage

ABSTRACTWe have investigated the lattice site location of B in Si using ion channeling in combination with nuclear reaction analysis (NRA). Silicon samples implanted with Boron at an energy of 10 keV and a dose of 5 × 1014 cm−2 (low dose samples) or 5 × 1015 cm−2 (high dose samples) were annealed at 1000 °C for 10 seconds (RTA) or at 800 °C for 10 minutes (FA). The activation efficiencies of these samples were estimated from the B atomic concentration and the hole concentration obtained by secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP), respectively. We also studied the ion implantation damage of Si crystals using ion channeling combined with Rutherford backscattering spectrometry (RBS). We found that the activation efficiency is proportional to the substitutionality, meaning that substitutional B is fully activated without any carrier compensation. We also found that B atoms go to the substitutional sites and are activated up to the solubility limit in the high dose samples. However, the ion implantation damage of the crystalline Si in the high dose samples increases somewhat after annealing.

Ion Beam Synthesis of Buried CoSi2 Layers in SiGe Alloys

1992 ◽  
Vol 279 ◽  
Author(s):  
R. Jebasinski ◽  
S. Mantl ◽  
Chr. Dieker ◽  
H. Dederichs ◽  
L. Vescan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Single Crystal ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Transmission Electron

ABSTRACTSynthesis of buried, epitaxial CoSi2 layers in Si1−xGex alloys (x =0.48 and x = 0.09) by 100 and 150 keV Co+ ion implantation and subsequent rapid thermal annealing was studied by X-Ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger Eectron Spectroscopy and Transmission Electron Microscopy. Buried single-crystal CoSi2 layers in the Si0.91Ge0.09 alloy containing ≈ 1 at% Ge were formed. The suicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. In contrast, in the Si0.52Ge0.48 alloy no buried suicide layers could be produced.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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