Microanalysis of high-dose oxygen-implanted germanium

1991 ◽  
Vol 49 ◽  
pp. 866-867
Author(s):  
M.J. Kim ◽  
Q. Zhang ◽  
K. Das Chowdhury ◽  
R.W. Carpenter ◽  
J.C. Kelly
Keyword(s):  
Ion Implantation ◽  
High Speed ◽  
Structural Changes ◽  
Rutherford Backscattering Spectrometry ◽  
Microstructural Characterization ◽  
High Dose ◽  
Ion Milling ◽  
Cross Sectional ◽  
Microstructural Investigation ◽  
Implantation Temperature

High-dose ion implantation is being increasingly used to produce buried oxide layers in silicon for high speed CMOS and VLSI applications. Ion implantation into germanium has been used to control optical properties. Germanium implanted with high dose oxygen is a promising material for photodetectors and solar energy converters. In the present study the structural changes in germanium caused by high dose oxygen implantation, giving low reflectivity in the far-UV and visible, were characterized by HREM and high spatial resolution AEM.The single crystal n-type germanium {111} wafers were implanted with O+ ions to doses of lx1017 to 1.5xl018 cm-2 at 45 keV. The implantation temperature was estimated to be about 400°C. The absorption behavior of the implanted samples was measured by Infrared (IR) spectroscopy. The compositional profiles of implanted layers were obtained by Rutherford Backscattering Spectrometry (RBS) and position-resolved EELS. Cross-sectional TEM samples for microstructural characterization were prepared by mechanical polishing and ion milling. A Philips 400ST/FEG analytical microscope was used for nanoprobe experiments, at 100 kV. Microstructural investigation was performed using ISI-002B and JEM-2000FX microscopes, at 200 kV.

Microstructure of silicon implanted with MeV gold ions

1991 ◽  
Vol 49 ◽  
pp. 876-877
Author(s):  
M.J. Kim ◽  
M. Catalano ◽  
T.P. Sjoreen ◽  
R.W. Carpenter
Keyword(s):  
Single Crystal ◽  
Ion Irradiation ◽  
Microstructural Characterization ◽  
High Energy ◽  
Ion Milling ◽  
Cross Sectional ◽  
Microstructural Investigation ◽  
Annealing Behavior ◽  
Different Doses

High-energy implantation of silicon is of great interest in recent years for microelectronics due to the formation of a buried damage or dopant layer away from the active region of the device. The damage nucleation and growth behavior is known to vary significantly along the ion's track for MeV irradiation. In this paper, a detailed characterization of the damage morphology produced by MeV gold ions for different doses into single crystal Si, as well as the associated annealing behavior, is presented.Single crystal n-type Czochralski silicon {001} wafers were implanted with Au++ ions from doses of 1x1015 to 3x1016 cm-2 at 2-3 MeV. Specimen temperatures for all implantations were 20 or 300°C. A measurement with an infrared pyrometer of the implanted surface indicated a slight temperature rise during ion irradiation. The compositional and damage profiles were determined by Rutherford backscattering/channeling spectroscopy (RBS). Cross-sectional TEM samples for microstructural characterization were prepared by mechanical polishing and ion milling. A Philips 400ST/FEG analytical microscope was used for nanoprobe experiments, at 100 kV. Microstructural investigation was performed using ISI-002B and JEM-2000FX microscopes, at 200 kV.

Iridium Silicides Formation on High Doses Ge+ Implanted Si Layers

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Curello ◽  
R. Gwilliam ◽  
M. Harry ◽  
R. J. Wilson ◽  
B. J. Sealy ◽  
...  
Keyword(s):  
Low Dose ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Sige Layer ◽  
Thermal Reaction ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range

AbstractIn this work iridium silicidation of high dose Ge+ implanted Si layers has been studied. Compositional graded SiGe layers with a Ge peak concentration between 6 at.% and 12 at.% have been fabricated using 200 keV Ge+ ion implantation into (100) Si. A 20 nm thick Ir film was then deposited by e-beam evaporation with thermal reaction being performed to both regrow the implantation damage and form the silicide. The crystal quality of the SiGe layer and its interaction with the Ir film have been studied by cross-sectional Transmission Electron Microscopy (XTEM) and Rutherford Backscattering Spectrometry (RBS).Solid Phase Epitaxial Growth (SPEG) in the low dose case has produced a defect free SiGe layer with the formation of the IrSi phase. The annealing ambient was found to be critical for the silicidation. For the high dose case, as expected, strain relaxation related defects were observed to nucleate at a depth close to the projected range of the Ge+ implant and to extend up to the surface. A second rapid thermal annealing at higher temperatures, performed in forming gas, consumed most of the defective layer moving the silicide interface closer to the peak of the Ge distribution. A second low dose Ge+ implant following the metal deposition has been found to have a beneficial effect on the quality of the final interface. An amorphizing 500 keV Si+ implant followed by SPEG has finally been used to move the end of range defects far from the interface.

SYNTHESIS OF ALLOY METAL NANOCLUSTERS IN SILICA GLASS BY SEQUENTIAL ION IMPLANTATION

2007 ◽  
Vol 06 (06) ◽  
pp. 423-430 ◽  
Author(s):  
B. JOSEPH ◽  
H. P. LENKA ◽  
P. K. KUIRI ◽  
D. P. MAHAPATRA ◽  
R. KESAVAMOORTHY
Keyword(s):  
Ion Implantation ◽  
Silica Glass ◽  
Metallic Nanoparticles ◽  
Rutherford Backscattering Spectrometry ◽  
Low Frequency ◽  
Peak Position ◽  
Negative Ion ◽  
Metal Nanoclusters ◽  
Cross Sectional ◽  
The Matrix

High fluence low energy negative ion implantation has been used to synthesize embedded metal nanoclusters of Au , Ag and Sb in silica glass. The Au - and Ag -implanted samples showed peaks, corresponding to surface plasmon resonance (SPR) in the optical absorption (OA) spectra, confirming the formation of metallic nanoparticles in the matrix. No SPR peak was observed in case of Sb -implanted samples which is attributed to the absence of pure metallic precipitates which could be detected in the OA spectrum. Low frequency Raman scattering (LFRS) measurements also confirm this. Cross-sectional transmission electron microscopy has been used to infer about the size distribution of the nanoparticles. Sequential implantations of Au and Ag or Au and Sb have been found to result in SPR peaks at locations in between those for nanoparticles of the constituent atoms, indicating the formation of alloy nanoparticles in the system. In case of the Au + Ag system, Rutherford backscattering spectrometry has been used to infer about the composition of the nanoparticles in terms of the concentrations of the metallic constituents. A direct, one-to-one correspondence between the SPR peak position and composition has been observed.

Structural Analysis of Silicon Doped by Plasma Source Ion Implantation

1993 ◽  
Vol 316 ◽  
Author(s):  
R.J. Matyi ◽  
D.L. Chapek ◽  
J.R. Conrad ◽  
S.B. Felch
Keyword(s):  
Ion Implantation ◽  
Diffuse Scattering ◽  
Structural Changes ◽  
Plasma Source ◽  
Perfect Crystal ◽  
Crystal Defects ◽  
High Dose ◽  
X Ray ◽  
Doped Silicon ◽  
Plasma Source Ion Implantation

ABSTRACTWe have used high resolution x-ray diffraction to analyze the structural changes that accompany boron doping of silicon by BF3 plasma source ion implantation (PSII). Triple crystal diffraction analysis of as-implanted PSII doped silicon showed little excess x-ray diffuse scattering, even when analyzed using the asymmetric (113) reflection for increased surface sensitivity. This result suggests that PSΠ is capable of providing high dose implantation with low damage. Annealing of the PSII-doped silicon showed the development of a compressive surface layer, indicated by enhanced x-ray scattering directed perpendicular to the surface. Virtually all of the scattering from the annealed samples was concentrated in the so-called “surface streak” which arises due to dynamical diffraction from the perfect crystal Si structure. Little if any diffuse scattering due to kinematic scattering from crystal defects was detected. These observations indicate that plasma source doping can be used to achieve both a shallow implant depth and an extremely uniform incorporation of boron into the silicon lattice.

Magnetic and structural changes in the near-surface epitaxial Y295La005Fe5O12 films after high-dose ion implantation

2016 ◽  
Vol 55 (12) ◽  
pp. B144 ◽  
Author(s):  
I. M. Fodchuk ◽  
I. I. Gutsuliak ◽  
V. V. Dovganiuk ◽  
A. O. Kotsyubynskiy ◽  
U. Pietsch ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Structural Changes ◽  
High Dose ◽  
Near Surface

Ion Beam Synthesis By Tungsten Implantation Into 6h-Silicon Carbide At Elevated Temperatures

1996 ◽  
Vol 423 ◽  
Author(s):  
Hannes Weishart ◽  
W. Matz ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
Tungsten Carbide ◽  
Elevated Temperatures ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Bimodal Distribution ◽  
High Dose ◽  
Electrically Conductive ◽  
Implantation Temperature ◽  
High Dose Implantation

AbstractWe studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1×1017 W+cm−2 at temperatures of 90°C and 500°C. The samples were subsequently annealed either at 950°C or 1100°C. The influence of implantation and annealing temperatures on the reaction of W with SiC was investigated. Rutherford backscattering spectrometry (RBS), x-ray diffiraction (XRD) and Auger electron spectroscopy (AES) contributed to study the structure and composition of the implanted layer as well as the chemical state of the elements. The implantation temperature influences the depth distribution of C, Si and W as well as the damage production in SiC. The W depth profile exhibits a bimodal distribution for high temperature implantation and a customary gaussian distribution for room temperature implantation. Formation of tungsten carbide and silicide was observed in each sample already in the as-implanted state. Implantation at 90°C and annealing at 950°C lead to crystallization of W2C; tungsten silicide, however, remains amorphous. After implantation at 500°C and subsequent annealing at 11007deg;C crystalline W5Si3 forms, while tungsten carbide is amorphous.

Precipitation processes in materials synthesis by high-dose ion implantation of semiconductors

1988 ◽  
Vol 46 ◽  
pp. 486-487
Author(s):  
S. J. Krause ◽  
C. O. Jung ◽  
T.S. Ravi ◽  
S.R. Wilson
Keyword(s):  
Ion Implantation ◽  
Structural Changes ◽  
High Dose ◽  
Materials Synthesis ◽  
Whole Process ◽  
High Temperature Anneal ◽  
Precipitation Processes ◽  
Precipitate Nucleation ◽  
New Phase ◽  
High Dose Implantation

High dose ion implantation for materials synthesis in semiconductors is receiving increasing attention with the commercialization of medium and high current ion implanters. Surface and buried dielectric layers in silicon are being fabricated by high-dose implantation of oxygen, nitrogen, and carbon. Metallic silicides are being synthesized by implantation of metals such as cobalt and nickel. The evolution of a new phase or phases from a supersaturated solid solution during implantation occurs in a zone with increasing concentration which is also in a concentration gradient. Because of this, and the dynamic phenomena occurring, the whole process is quite complex. Additionally, a final, high temperature anneal to remove damage and to consolidate and stabilize the new phase(s) further complicates any analysis. There is no standard approach to analyze structural changes during high dose implantation and subsequent annealing, but it should be possible to approximate the phenomena based on traditional models for precipitation processes in solids. These processes include precipitate nucleation, growth, coarsening, coalescence, and dissolution. The most heavily studied process of materials synthesis by implantation is formation of a buried oxide layer in silicon (often referred to as SIMOX material).

Conductive Tungsten-Based Layers Synthesized by Ion Implantation into 6H-Silicon Carbide

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Weishart ◽  
J. Schoneich ◽  
M. Voelskow ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Depth Distribution ◽  
Ostwald Ripening ◽  
Rutherford Backscattering Spectrometry ◽  
High Dose ◽  
Electrically Conductive ◽  
Gaussian Shape ◽  
Implantation Temperature ◽  
High Dose Implantation

AbstractWe studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1.2x 1017 WIcm 2 at temperatures between 200°C and 400°C. The influence of implantation temperature on the distribution of W in SiC was investigated and compared to results obtained earlier from room temperature (RT) and 500°C implants. Rutherford backscattering spectrometry (RBS) was employed to study the structure and composition of the implanted layers. Implantation at temperatures between RT and 300°C did not influence the depth distribution of C, Si and W. The W depth profile shows a conventional Gaussian shape. Implanting at higher temperatures led to a more confined W rich layer in the SiC. This confinement is explained by Ostwald ripening which is enabled during implantation at temperatures above 300°C. The depth of the implantation induced damage decreases slightly with increasing implantation temperature, except for 400°C implantation. The amount of damage, however, is significantly reduced only for implantation at 500°C.

Solid Phase Epitaxy of Strained Si1−xGex Alloys Formed by Highdose Ion Implantation into Silicon

1990 ◽  
Vol 187 ◽  
Author(s):  
D. J. Howard ◽  
D. C. Paine ◽  
N. G. Stoffel
Keyword(s):  
Ion Implantation ◽  
Strain Energy ◽  
Critical Strain ◽  
Solid Phase ◽  
Stacking Faults ◽  
New Method ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Si Wafer

AbstractIn this paper we propose a new method for the synthesis of Si1−xGex strained-layer alloys using high-dose ion implantation of 74Ge at 200 keV into a preamorphized <001> Si wafer followed by solid phase epitaxy (SPE). Cross-sectional TEM was performed on samples at various stages of regrowth which revealed the evolution of the amorphous/crystalline interface and the development of strain relieving defects during SPE. We report that stacking faults are kinetically favored during SPE of Si1−xGex but are energetically feasible only above a critical strain energy. We propose a model that is based on the well known Matthews and Blakeslee approach which predicts the onset of stacking faults during SPE of high-dose ion implant-synthesized Si1−xGex/Si.

scholarly journals Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Ion Beam Modification

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

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