Effect of Iodine and Strontium Ion Implantation on the Microstructure of Cubic Zirconia

2000 ◽  
Vol 647 ◽  
Author(s):  
Sha Zhu ◽  
Lumin Wang ◽  
Shixin Wang ◽  
Rodney C. Ewing
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Orientation Relation ◽  
Cross Sectional ◽  
Peak Displacement ◽  
Defect Clusters ◽  
Nano Crystalline ◽  
Transmission Electron ◽  
The Matrix ◽  
Strontium Ion

Abstract200 keV iodine and 400 keV strontium ions have been implanted into YSZ in order to study the effects of fission product incorporation in YSZ as an inert fuel matrix. The ion implantation was conducted at room temperature. The ion fluences reached 1×1021 ions/m2 which gives peak displacement damage levels of ~ 290 dpa for I ion implantation and ~ 200 dpa for Sr ion implantation. The peak concentration reaches ~26 at. % for implanted I ions and ~11.6 at.% for Sr ions. Cross-sectional transmission electron microscopy (TEM) was completed to investigate the microstructure changes caused by the implantation. No evidence of amorphization was detected in both samples although a high density of defect clusters was observed by TEM. Cross-sectional TEM revealed formation of iodine containing voids in I- implanted samples and crystalline precipitates of a few tens of nanometers in Sr-implanted samples after annealing of the implanted sample at 1000°C for 0.5 to 2 hours. The void size increased with increasing annealing time. The nano-crystalline precipitates in Sr-implanted YSZ are isometric SrZrO3 (a≅0.41 nm). The orientation relation between the matrix and precipitates, as determined by selected area diffraction pattern, was: [011]YSZ// [111]SrZrO3 and [200]YSZ// [110]SrZrO3.

Effects of Cesium, Iodine and Strontium Ion Implantation on the Microstructure of Cubic Zirconia

2000 ◽  
Vol 663 ◽  
Author(s):  
L.M. Wang ◽  
S. Zhu ◽  
S.X. Wang ◽  
R.C. Ewing
Keyword(s):  
Ion Implantation ◽  
Ion Concentration ◽  
Cross Sectional ◽  
Peak Displacement ◽  
Cubic Zirconia ◽  
Damage Level ◽  
Transmission Electron ◽  
Ion Energies ◽  
Ionic Size

ABSTRACTCesium, iodine and strontium ions have been implanted into yttria-stabilized cubic zirconia (YSZ) to determine the effects of fission product incorporation in YSZ that is considered as an inert nuclear fuel matrix. The ion implantation was conducted at room temperature to 1 × 1021ions/m2 for each ion with ion energies ranging from 70 to 400 keV. The peak displacement damage level and the peak ion concentration in YSZ reached 205-330 dpa and 11-26 at%, respectively. The microstructure of the implanted YSZ was studied by in situ and cross-sectional transmission electron microscopy. In the iodine and strontium implanted samples, a damaged layer with a high density of defect clusters was observed, while in the cesium implanted specimen, the damaged layer is amorphous. Nanocrystalline precipitates were observed in the strontium implanted specimen after annealing at 1000°C. The results are discussedin terms of the ionic size, mobility and the solubility of the implanted species in YSZ.

Preparation and Properties of Nano-Crystalline Cellulose Electro-Rheological Fluid

2015 ◽  
Vol 815 ◽  
pp. 217-221
Author(s):  
Ling Li Xu ◽  
Xing Ling Shi ◽  
Qing Liang Wang
Keyword(s):  
Room Temperature ◽  
Silicone Oil ◽  
Strong Acid ◽  
Crystalline Cellulose ◽  
Methyl Silicone ◽  
Shearing Stress ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nano Crystalline ◽  
Transmission Electron

nanocrystalline cellulose (NCC) was prepared from micro-crystalline cellulose (MCC) by strong acid hydrolysis. The characteristics of such particle were studied by transmission electron microscopy, X-ray diffraction and Fourier transform infrared spectroscopy. Electro-rheological fluids (ERF) were prepared by dispersing NCC and MCC in methyl-silicone oil, and their ER effects were measured. Experimental results indicated that NCC ERF exhibited a remarkable ER effect. The highest static shearing stress of NCC ERF (3.5 g/ml) was 5.1 kPa at the room temperature under a 4 .2 kV/mm electric field, increased about 5.5 times compared to MCC ERF, and sedimentation of NCC ERF was not observed even after 60 days.

SYNTHESIS OF ALLOY METAL NANOCLUSTERS IN SILICA GLASS BY SEQUENTIAL ION IMPLANTATION

2007 ◽  
Vol 06 (06) ◽  
pp. 423-430 ◽  
Author(s):  
B. JOSEPH ◽  
H. P. LENKA ◽  
P. K. KUIRI ◽  
D. P. MAHAPATRA ◽  
R. KESAVAMOORTHY
Keyword(s):  
Ion Implantation ◽  
Silica Glass ◽  
Metallic Nanoparticles ◽  
Rutherford Backscattering Spectrometry ◽  
Low Frequency ◽  
Peak Position ◽  
Negative Ion ◽  
Metal Nanoclusters ◽  
Cross Sectional ◽  
The Matrix

High fluence low energy negative ion implantation has been used to synthesize embedded metal nanoclusters of Au , Ag and Sb in silica glass. The Au - and Ag -implanted samples showed peaks, corresponding to surface plasmon resonance (SPR) in the optical absorption (OA) spectra, confirming the formation of metallic nanoparticles in the matrix. No SPR peak was observed in case of Sb -implanted samples which is attributed to the absence of pure metallic precipitates which could be detected in the OA spectrum. Low frequency Raman scattering (LFRS) measurements also confirm this. Cross-sectional transmission electron microscopy has been used to infer about the size distribution of the nanoparticles. Sequential implantations of Au and Ag or Au and Sb have been found to result in SPR peaks at locations in between those for nanoparticles of the constituent atoms, indicating the formation of alloy nanoparticles in the system. In case of the Au + Ag system, Rutherford backscattering spectrometry has been used to infer about the composition of the nanoparticles in terms of the concentrations of the metallic constituents. A direct, one-to-one correspondence between the SPR peak position and composition has been observed.

Cross-Sectional TEM Studies of Indentation-Induced Phase Transformations in Si: Indenter Angle Effects

2004 ◽  
Vol 843 ◽  
Author(s):  
Songqing Wen ◽  
James Bentley ◽  
Jae-il Jang ◽  
G. M. Pharr
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Indentation Load ◽  
High Load ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Cube Corner ◽  
Displacement Behavior ◽  
Si Wafer

ABSTRACTNanoindentations were made on a (100) single crystal Si wafer at room temperature with a series of triangular pyramidal indenters having centerline-to-face angles ranging from 35° to 85°. Indentations produced at high (80 mN) and low (10 mN) loads were examined in plan-view by scanning electron microscopy and in cross-section by transmission electron microscopy. Microstructural observations were correlated with the indentation load-displacement behavior. Cracking and extrusion are more prevalent for sharp indenters with small centerline-to-face angles, regardless of the load. At low loads, the transformed material is amorphous silicon for all indenter angles. For Berkovich indentations made at high-load, the transformed material is a nanocrystalline mix of Si-I and Si-III/Si-XII, as confirmed by selected area diffraction. Extrusion of material at high loads for the cube-corner indenter reduces the volume of transformed material remaining underneath the indenter, thereby eliminating the pop-out in the unloading curve.

Degradation of Nano-crystalline ITO Films due to Exposure to Hyperthermal Atomic Oxygen

2005 ◽  
Vol 887 ◽  
Author(s):  
Long Li ◽  
Ross Harder ◽  
Fengting Xu ◽  
Ian K. Robinson ◽  
Judith C. Yang
Keyword(s):  
Electron Microscope ◽  
Indium Tin Oxide ◽  
Atomic Oxygen ◽  
Room Temperature ◽  
Grazing Incidence ◽  
Float Glass ◽  
Cross Sectional ◽  
Nano Crystalline ◽  
Phase Surface ◽  
Ito Films

ABSTRACTIndium tin oxide (ITO) films coated on float glass slides were exposed to 5 eV hyperthermal atomic oxygen at room temperature with increasing fluences: 2×1019, 6×1019 and 2×1020 O-atoms/cm2. We characterized the structure of the ITO films after room temperature atomic oxygen exposure with scanning electron microscope (SEM) and atomic force microscope (AFM), synchrotron X-ray diffraction (XRD), and cross-sectional transmission electron microscope (X-TEM). The unexposed ITO films were found to possess a nano-crystalline surface, and clean and abrupt ITO/SiO2 interfaces without interfacial phase. Surface roughness of the exposed ITO films increased with the increasing AO influences. The interface- sensitive peaks in XRD measurements with grazing incidence revealed that the crystallinity of the ITO was modified near the interface. Cross-sectional TEM confirmed that many ITO particles with diameters ranging from 2-10 nm formed in the SiO2 substrate near the interface after AO exposure. These findings suggest that O atoms can travel through the ITO films, where the boundaries of columnar-grown grains may supply the pathway.

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

Residual Ion Implantation Damage at Source/Drain Junctions of Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistor

2002 ◽  
Vol 715 ◽  
Author(s):  
Kee-Chan Park ◽  
Jae-Shin Kim ◽  
Woo-Jin Nam ◽  
Min-Koo Han
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Implantation Damage ◽  
Transmission Electron

AbstractResidual ion implantation damage at source/drain junctions of excimer laser annealed polycrystalline silicon (poly-Si) thin film transistor (TFT) was investigated by high-resolution transmission electron microscopy (HR-TEM). Cross-sectional TEM observation showed that XeCl excimer laser (λ=308 nm) energy decreased considerably at the source/drain junctions of top-gated poly-Si TFT due to laser beam diffraction at the gate electrode edges and that the silicon layer amorphized by ion implantation, was not completely annealed at the juncions. The HR-TEM observation showed severe lattice disorder at the junctions of poly-Si TFT.

Electron Microscopy of Irradiated and Mechanically Tested Tungsten

1967 ◽  
Vol 25 ◽  
pp. 314-315
Author(s):  
Robert C. Rau ◽  
Robert L. Ladd ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Physical And Mechanical Properties ◽  
Threshold Region ◽  
Body Centered Cubic ◽  
Defect Clusters ◽  
Neutron Fluences ◽  
Transmission Electron ◽  
Abrupt Changes ◽  
The Matrix

As part of a program investigating the effects of neutron irradiation on the physical and mechanical properties of body centered cubic refractory metals, transmission electron microscopy has been carried out on irradiated tungsten after tensile and creep-rupture testing. These observations have shown the existence of a fluence threshold region between 5.9 × 1018 and 3.8 × 1019 nvt (E < 1 MeV) over which both microstructure and mechanical properties undergo abrupt changes.A series of specimens irradiated at pile ambient temperature (∼ 70°C) to various fast neutron fluences and subsequently tensile tested at 400°C showed dramatic evidence of the build-up of defect clusters with increasing exposure. The starting microstructure present in undeformed button heads of unirradiated control specimens consisted of large tungsten grains divided into many small subgrains by hexagonal dislocation networks, as shown in Figure 1. Irradiation to neutron fluences of 4.0 and 5.9 × 1018 nvt produced tiny dot clusters in the matrix, as shown in Figure 2.

Direct Observations of Relaxation of Si/SiGe/Si on Insulator

2010 ◽  
Vol 1262 ◽  
Author(s):  
Tongda Ma ◽  
Hailing Tu
Keyword(s):  
Misfit Dislocation ◽  
Room Temperature ◽  
Sige Layer ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Cross Sectional ◽  
Direct Observations ◽  
Transmission Electron ◽  
Dislocation Behavior ◽  
Film Specimen

AbstractMicrostructural evolution is directly observed when the cross-sectional film specimen of Si/SiGe/Si on insulator (Si/SiGe/SOI) is heated from room temperature (R.T., 291 K) up to 1113 K in high voltage transmission electron microscope (HVEM). The misfit dislocation at the lower interface of the SiGe layer begins to extend downwards even at 913 K. The lower interface takes the lead in roughening against the upper interface of the SiGe layer. The roughened interface is ascribed to elastic relaxation. As misfit strain is partially transferred to SOI top Si layer and misfit dislocation is prolonged at the lower interface, the roughened interface turns smooth again. Thereafter, the misfit dislocations are introduced into the upper roughened interface of the SiGe layer to release the increased misfit strain. It is suggested that the microscopic relaxation of the SiGe layer is related to dislocation behavior and strain transfer.

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