A SHORT REVIEW ON DEEP-SUB-VOLTAGE NANOELECTRONICS AND RELATED TECHNOLOGIES

2009 ◽  
Vol 08 (04n05) ◽  
pp. 389-402 ◽  
Author(s):  
ALEXANDER DESPOTULI ◽  
ALEXANDRA ANDREEVA
Keyword(s):  
Integrated Circuits ◽  
Supply Voltage ◽  
High Capacity ◽  
Short Review ◽  
Superionic Conductors ◽  
Future Perspectives ◽  
Theoretical Limit ◽  
Power Supply Voltage ◽  
Micron Size

The decrease of energy consumption per 1 bit processing (ε) and power supply voltage (V dd ) of integrated circuits (ICs) are long-term tendencies in micro- and nanoelectronics. In this framework, deep-sub-voltage nanoelectronics (DSVN), i.e., ICs of ~1011–1012 cm-2 component densities operating near the theoretical limit of ε, is sure to find application in the next 10 years. In nanoelectronics, the demand on high-capacity capacitors of micron sizes sharply increases with a decrease of technological norms, ε and V dd . Creation of high-capacity capacitors of micron size to meet the challenge of DSVN and related technologies is considered. The necessity of developing all-solid-state impulse micron-sized supercapacitors on the basis of advanced superionic conductors (nanoionic supercapacitors) is discussed. Theoretical estimates and experimental data on prototype nanoionic supercapacitors with capacity density δC ≈ 100 μF/cm2 are presented. Future perspectives of nanoionic devices are briefly discussed.

scholarly journals Design techniques for low-voltage analog integrated circuits

2017 ◽  
Vol 68 (4) ◽  
pp. 245-255 ◽  
Author(s):  
Matej Rakús ◽  
Viera Stopjaková ◽  
Daniel Arbet
Keyword(s):  
Integrated Circuits ◽  
Low Voltage ◽  
Supply Voltage ◽  
Building Blocks ◽  
Cmos Process ◽  
Mos Transistors ◽  
Power Supply Voltage ◽  
Current Mirrors ◽  
Moderate Inversion ◽  
Design Techniques

AbstractIn this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

Power Supply Voltage Dependence of Within-Die Delay Variation of Regular Manual Layout and Irregular Place-and-Route Layout

2011 ◽  
Vol E94-C (6) ◽  
pp. 1072-1075
Author(s):  
Tadashi YASUFUKU ◽  
Yasumi NAKAMURA ◽  
Zhe PIAO ◽  
Makoto TAKAMIYA ◽  
Takayasu SAKURAI
Keyword(s):  
Power Supply ◽  
Voltage Dependence ◽  
Supply Voltage ◽  
Power Supply Voltage ◽  
Place And Route ◽  
Delay Variation

Design of Effective Supply Voltage Monitor for Measuring Power Rails of Integrated Circuits

2013 ◽  
Vol E96.C (4) ◽  
pp. 538-545
Author(s):  
Takeshi OKUMOTO ◽  
Kumpei YOSHIKAWA ◽  
Makoto NAGATA
Keyword(s):  
Integrated Circuits ◽  
Supply Voltage

Power Supply Voltage Control for Eliminating Overkills and Underkills in Delay Fault Testing

2016 ◽  
Vol E99.C (10) ◽  
pp. 1219-1225
Author(s):  
Masahiro ISHIDA ◽  
Toru NAKURA ◽  
Takashi KUSAKA ◽  
Satoshi KOMATSU ◽  
Kunihiro ASADA
Keyword(s):  
Power Supply ◽  
Supply Voltage ◽  
Voltage Control ◽  
Fault Testing ◽  
Power Supply Voltage ◽  
Delay Fault ◽  
Delay Fault Testing

AlInAs/GaInAs on InP HEMTs for low power supply voltage operation of high power-added efficiency microwave amplifiers

1993 ◽  
Vol 29 (15) ◽  
pp. 1324 ◽  
Author(s):  
L.E. Larson ◽  
M.M. Matloubian ◽  
J.J. Brown ◽  
A.S. Brown ◽  
M. Thompson ◽  
...  
Keyword(s):  
Low Power ◽  
High Power ◽  
Power Supply ◽  
Supply Voltage ◽  
Power Supply Voltage ◽  
Power Added Efficiency ◽  
Microwave Amplifiers

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

scholarly journals Wire-in-Wire TiO2/C Nanofibers Free-Standing Anodes for Li-Ion and K-Ion Batteries with Long Cycling Stability and High Capacity

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Die Su ◽  
Yi Pei ◽  
Li Liu ◽  
Zhixiao Liu ◽  
Junfang Liu ◽  
...  
Keyword(s):  
Critical Role ◽  
Electronic Conductivity ◽  
Specific Capacity ◽  
High Capacity ◽  
Cycling Stability ◽  
Free Standing ◽  
High Specific Capacity ◽  
Tetracarboxylic Dianhydride ◽  
Carbon Network

AbstractWearable and portable mobile phones play a critical role in the market, and one of the key technologies is the flexible electrode with high specific capacity and excellent mechanical flexibility. Herein, a wire-in-wire TiO2/C nanofibers (TiO2 ww/CN) film is synthesized via electrospinning with selenium as a structural inducer. The interconnected carbon network and unique wire-in-wire nanostructure cannot only improve electronic conductivity and induce effective charge transports, but also bring a superior mechanic flexibility. Ultimately, TiO2 ww/CN film shows outstanding electrochemical performance as free-standing electrodes in Li/K ion batteries. It shows a discharge capacity as high as 303 mAh g−1 at 5 A g−1 after 6000 cycles in Li half-cells, and the unique structure is well-reserved after long-term cycling. Moreover, even TiO2 has a large diffusion barrier of K+, TiO2 ww/CN film demonstrates excellent performance (259 mAh g−1 at 0.05 A g−1 after 1000 cycles) in K half-cells owing to extraordinary pseudocapacitive contribution. The Li/K full cells consisted of TiO2 ww/CN film anode and LiFePO4/Perylene-3,4,9,10-tetracarboxylic dianhydride cathode possess outstanding cycling stability and demonstrate practical application from lighting at least 19 LEDs. It is, therefore, expected that this material will find broad applications in portable and wearable Li/K-ion batteries.

Design of the variable frequency oscillator in DC-DC converter

Circuit World ◽  
2019 ◽  
Vol 45 (2) ◽  
pp. 80-85
Author(s):  
Tian Lei ◽  
Nan Gong ◽  
Li Wang ◽  
Qin Qin Li ◽  
Heng Wei Wang
Keyword(s):  
Supply Voltage ◽  
Operating Frequency ◽  
Maximum Deviation ◽  
Variable Frequency ◽  
Cmos Process ◽  
Power Supply Voltage ◽  
Output Stage ◽  
Content Type ◽  
Oscillator Frequency ◽  
Light Load

Purpose Because of the logic delay in the converter, the minimum turn on time of the switch is influenced by the constant time. When the inductor current gets to the threshold of the chip, the control signal will delay for a period. This makes the inductor current rising with the increasing of the clock and leads to the load current out of control. Thus, this paper aims to design an oscillator with a variable frequency protection function. Design/methodology/approach This paper presents an oscillator with the reducing frequency applied in the DC-DC converter. When the converter works normally, the operating frequency of the oscillator is 1.5 MHz. So the inductor current has enough time to decay and prevent the power transistor damaging. After the abnormal condition, the converter returns to the normal operating mode automatically. Findings Based on 0.5 µm CMOS process, simulated by the HSPICE, the simulation results shows that the frequency of the oscillator linearly decreases from 1.5 MHz to 380 KHz when the feedback voltage less than 0.2 V. The maximum deviation of the oscillator frequency is only 6 per cent from −50°C to 125°C within the power supply voltage of 2.7-5.5 V. Originality/value When the light load occurs at the output stage, the oscillator frequency will decrease as the load voltage drops. The test results shows that when the circuit works in the normal condition, the oscillator frequency is 1.5 MHz. When the load decreased, the operating frequency is dropped dramatically.

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