High Etch Rate Modes in Microwave Plasma Etching of Silicon in High Magnetic Fields

1990 ◽  
Vol 29 (Part 1, No. 11) ◽  
pp. 2641-2643 ◽  
Author(s):  
Haruo Shindo ◽  
Tetsuro Hashimoto ◽  
Fumitake Amasaki ◽  
Yasuhiro Horiike
Keyword(s):  
Magnetic Fields ◽  
Plasma Etching ◽  
Etch Rate ◽  
Microwave Plasma ◽  
High Magnetic Fields ◽  
High Etch Rate

ICP Etching of 4H-SiC Substrates

2013 ◽  
Vol 740-742 ◽  
pp. 825-828 ◽  
Author(s):  
Jerome Biscarrat ◽  
Jean François Michaud ◽  
Emmanuel Collard ◽  
Daniel Alquier
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Effective Technique ◽  
Working Pressure ◽  
Inductively Coupled ◽  
Icp Etching ◽  
High Etch Rate ◽  
The Impact

Due to its inert chemical nature, plasma etching is the most effective technique to pattern SiC. In this paper, dry etching of 4H-SiC substrate in Inductively Coupled Plasma (ICP) has been studied in order to evaluate the impact of process parameters on the characteristics of etching such as etch rate and trenching effect. Key process parameters such as platen power and ICP coil power prove to be essential to control the SiC etch rate. On the other hand, the ICP coil power and the working pressure mainly master the trenching effect. Our results enlighten that high etch rate with minimal trenching effect can be obtained using high ICP coil power and low working pressure.

The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma

2008 ◽  
Vol 1108 ◽  
Author(s):  
Xiaoyan Xu ◽  
Vladimir Kuryatkov ◽  
Boris Borisov ◽  
Mahesh Pandikunta ◽  
Sergey A Nikishin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Native Oxide ◽  
Short Exposure ◽  
Ion Etching ◽  
Inductively Coupled ◽  
High Etch Rate

AbstractThe effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both AlN and its native oxide. Following removal of the native oxide, Cl2/Ar/BCl3 plasma etching with 15% BCl3 fraction results in a high etch rate ˜ 87 nm/min and modest increases in the surface roughness.

The Benefits of Process Parameter Ramping During The Plasma Etching of High Aspect Ratio Silicon Structures

1998 ◽  
Vol 546 ◽  
Author(s):  
J. Hopkins ◽  
H. Ashraf ◽  
J. K. Bhardwaj ◽  
A. M. Hynes ◽  
I. Johnston ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
Etch Rate ◽  
Critical Dimension ◽  
Optical Devices ◽  
Aspect Ratios ◽  
Dimension Control ◽  
Silicon Structures ◽  
High Etch Rate ◽  
Product Specifications

AbstractIn the ongoing enhancement of MEMS applications, the STS Advanced Silicon Etch, (ASETM). process satisfies the demanding requirements of the industry. Typically, highly anisotropic. high aspect ratios profiles with fine CD (critical dimension) control are required. Selectivities to photoresist of 150:1 with Si etch rates of up to 10μm/min are demonstrated. Applications range from shallow etched optical devices to through wafer membrane etches. This paper details some of the fundamental trends of the ASETM process and goes on to discuss how the process has been enhanced to meet product specifications. Parameter ramping is a powerful technique used to achieve the often-conflicting requirements of high etch rate with good profile/CD control. The results are presented in this paper.

Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 Plasma

2012 ◽  
Vol 711 ◽  
pp. 66-69 ◽  
Author(s):  
Ji Hoon Choi ◽  
Laurence Latu-Romain ◽  
Florian Dhalluin ◽  
Thierry Chevolleau ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
High Selectivity ◽  
Nanometer Scale ◽  
Etch Depth ◽  
Fabrication Technique ◽  
Top Down ◽  
Inductively Coupled ◽  
High Anisotropy ◽  
High Etch Rate

A top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars has been demonstrated by using inductively coupled SF6/O2 plasma etching. At optimal etching conditions, the obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni).

High-etch-rate deep anisotropic plasma etching of silicon for MEMS fabrication

1998 ◽  
Author(s):  
Tam Pandhumsoporn ◽  
Lei Wang ◽  
Michael Feldbaum ◽  
Prashant Gadgil ◽  
Michel Puech ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
Anisotropic Plasma ◽  
Mems Fabrication ◽  
High Etch Rate

Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF6/O2 Plasma Method

2012 ◽  
Vol 717-720 ◽  
pp. 893-896 ◽  
Author(s):  
J.H. Choi ◽  
Laurence Latu-Romain ◽  
Thierry Baron ◽  
Thierry Chevolleau ◽  
Edwige Bano
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
High Selectivity ◽  
Nanometer Scale ◽  
Etch Depth ◽  
Crystallographic Structure ◽  
Hexagonal Symmetry ◽  
Inductively Coupled ◽  
High Anisotropy ◽  
High Etch Rate

We demonstrate a top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars by using inductively coupled SF6/O2 plasma etching. The obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars obtained under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni mask). We obtained hexagonal symmetry of SiC nanopillar, which might be attributed to the crystallographic structure of the SiC phase.

Inductively Coupled Plasma Etching of Pt/Ti Electrodes in Cl-Based Plasma

2013 ◽  
Vol 721 ◽  
pp. 346-349
Author(s):  
Zhi Qin Zhong ◽  
Cheng Tao Yang ◽  
Guo Jun Zhang ◽  
Shu Ya Wang ◽  
Li Ping Dai
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Dry Etching ◽  
Rf Power ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
High Etch Rate ◽  
Ar Gas

Dry etching of Pt/Ti film was carried out using Cl2/Ar plasmas in an inductively coupled plasma (ICP) reactor. The influence of the various process parameters, such as RIE power, ICP power and Cl2/Ar gas mixing ratio, on the etch rate and selectivity of photoresist to Pt/Ti film were investigated systematically and optimized. It was revealed that the etch rate and the selectivity strongly depended on the key process parameters. The etch rate was found to increase dramatically with increasing of RIE power and ICP power. But by changing the ratio of Cl2 to the total gas, the maximum etch rate could be obtained at the proper ratio of 20%. The results also indicated too low or too high RIE power and the Cl2 ratio was detrimental to the selectivity. The optimized parameters of Pt/Ti dry etching for high etch rate and low selectivity of photoresist to Pt/Ti were obtained to be pressure: 10mT, RF power: 250W, ICP power: 0W, Cl2: 8sccm (standard cubic centimeters per minute), Ar: 32sccm.

Electron cyclotron resonance microwave-plasma etching

1987 ◽  
Vol 65 (8) ◽  
pp. 856-858 ◽  
Author(s):  
S. R. Mejia ◽  
T. Chau ◽  
R. D. McLeod ◽  
K. C. Kao ◽  
H. C. Card
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Active Species ◽  
Electron Cyclotron ◽  
Dissociation Efficiency ◽  
Torr Pressure ◽  
High Etch Rate ◽  
Resonance Microwave

Electron cyclotron resonance microwave-plasma etching of Si and SiO2 using a (CF4 + O2) gas mixture is investigated in a magnetically confined plasma. High etch rates have been obtained at 0.8 Torr pressure, where the etching mechanism may be due primarily to neutral active species (1 Torr = 133 Pa). The high etch rate can be explained by a high dissociation efficiency of the ECR microwave plasma, and the directionality by carbon deposits associated with it. The magnetic confinement is likely to play a role similar to that of ion and electron screening.

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