Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3570-3574 ◽  
Author(s):  
Yukinori Morita ◽  
Kazushi Miki ◽  
Hiroshi Tokumoto
Keyword(s):  
Atomic Structure ◽  
Hydrofluoric Acid ◽  
Acid Treatments

scholarly journals Improving Corrosion Resistance and Biocompatibility of Magnesium Alloy by Sodium Hydroxide and Hydrofluoric Acid Treatments

2016 ◽  
Vol 7 (1) ◽  
pp. 33 ◽  
Author(s):  
Chang-Jiang Pan ◽  
Li-Qun Pang ◽  
Yu Hou ◽  
Yue-Bin Lin ◽  
Tao Gong ◽  
...  
Keyword(s):  
Corrosion Resistance ◽  
Magnesium Alloy ◽  
Sodium Hydroxide ◽  
Hydrofluoric Acid ◽  
Acid Treatments

The influence of hydrofluoric acid etching processes on the photocatalytic hydrogen evolution reaction using mesoporous silicon nanoparticles

2020 ◽  
Vol 222 ◽  
pp. 176-189 ◽  
Author(s):  
Sarah A. Martell ◽  
Ulrike Werner-Zwanziger ◽  
Mita Dasog
Keyword(s):  
Photocatalytic Activity ◽  
Hydrogen Evolution ◽  
Hydrogen Evolution Reaction ◽  
Hydrofluoric Acid ◽  
Silicon Nanoparticles ◽  
Acid Etching ◽  
Mesoporous Silicon ◽  
Photocatalytic Hydrogen Evolution ◽  
Si Nanoparticles ◽  
Acid Treatments

In this work, the response of the photocatalytic activity of mp-Si nanoparticles to a series of HF acid treatments was investigated.

scholarly journals The Effects of the Acid Treatment of ZrB2 Particles on Their Purity and Aqueous Dispersibility

Processes ◽  
2021 ◽  
Vol 10 (1) ◽  
pp. 18 ◽  
Author(s):  
Jinuk Choi ◽  
Gye Seok An
Keyword(s):  
Aqueous Solution ◽  
Surface Properties ◽  
Oxygen Content ◽  
Hydrofluoric Acid ◽  
Acid Treatment ◽  
Zirconium Diboride ◽  
Acid Type ◽  
Aqueous Dispersibility ◽  
Acid Treatments

Oxide impurities such as boria (B2O3) and zirconia (ZrO2) on the surfaces of zirconium diboride (ZrB2) particles are known to limit their sinterability. Among the impurities, B2O3 on the surface of ZrB2 particles could be easily removed by methanol or hydrofluoric acid. However, the remaining ZrO2 still gave negative influences on the sinterability. In this study, ZrB2 particles were treated with various acids to remove oxide impurities on their surfaces. The acid treatments were found to vary in efficacy, according to acid type, and affect the crystallinity and morphology of ZrB2 particles to varying degrees, in some cases forming additional impurities. In particular, the change in the oxygen content of the ZrB2 particles induced by acid treatment was found to depend on the type of acid. The results of the acid treatments were compared which revealed that HNO3 treatment optimizes the purity of ZrB2 particles. In addition, the effects of acid treatment on the surface properties of ZrB2 particles were considered. In particular, the correlation between the surface properties of the acid-treated ZrB2 particles and their dispersibility in aqueous solution was investigated.

Radiation-induced surface decomposition

1983 ◽  
Vol 41 ◽  
pp. 368-369
Author(s):  
M. L. Knotek
Keyword(s):  
Ionizing Radiation ◽  
Atomic Structure ◽  
Chemical Bonding ◽  
Neutral Species ◽  
Radiation Induced ◽  
Physical And Chemical ◽  
Surface Decomposition ◽  
The Relationship ◽  
Electron And Photon ◽  
Surface Bond

Modern surface analysis is based largely upon the use of ionizing radiation to probe the electronic and atomic structure of the surfaces physical and chemical makeup. In many of these studies the ionizing radiation used as the primary probe is found to induce changes in the structure and makeup of the surface, especially when electrons are employed. A number of techniques employ the phenomenon of radiation induced desorption as a means of probing the nature of the surface bond. These include Electron- and Photon-Stimulated Desorption (ESD and PSD) which measure desorbed ionic and neutral species as they leave the surface after the surface has been excited by some incident ionizing particle. There has recently been a great deal of activity in determining the relationship between the nature of chemical bonding and its susceptibility to radiation damage.

Simulated Dark-Field Electron Micrographs of Point Defects and Organometallics

1975 ◽  
Vol 33 ◽  
pp. 200-201
Author(s):  
William Krakow
Keyword(s):  
Electron Micrographs ◽  
Point Defects ◽  
Structure Determination ◽  
Atomic Structure ◽  
Image Interpretation ◽  
Dark Field ◽  
Field Electron ◽  
Dark Field Microscopy ◽  
Dark Field Electron

Tilted beam dark-field microscopy has been applied to atomic structure determination in perfect crystals, several synthesized molecules with heavy atcm markers and in the study of displaced atoms in crystals. Interpretation of this information in terms of atom positions and atom correlations is not straightforward. Therefore, calculated dark-field images can be an invaluable aid in image interpretation.

Surface reconstructions of (001) cleaved GdBa2Cu3O7-δ

1992 ◽  
Vol 50 (1) ◽  
pp. 106-107
Author(s):  
H.W. Zandbergen ◽  
M.R. McCartney
Keyword(s):  
Electron Microscopy ◽  
Copper Oxide ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
Oxygen Deficiency ◽  
Surface Layers ◽  
Layer Sequence ◽  
Surface Reconstructions ◽  
Good Agreement

Very few electron microscopy papers have been published on the atomic structure of the copper oxide based superconductor surfaces. Zandbergen et al. have reported that the surface of YBa2Cu3O7-δ was such that the terminating layer sequence is bulk-Y-CuO2-BaO-CuO-BaO, whereas the interruption at the grain boundaries is bulk-Y-CuO2-BaO-CuO. Bursill et al. reported that HREM images of the termination at the surface are in good agreement with calculated images with the same layer sequence as observed by Zandbergen et al. but with some oxygen deficiency in the two surface layers. In both studies only one or a few surfaces were studied.

High-resolution electron microscopy of the atomic structure of some grain boundaries in Au

1986 ◽  
Vol 44 ◽  
pp. 414-415
Author(s):  
W. Krakow ◽  
D. A. Smith
Keyword(s):  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Image Features ◽  
Image Feature ◽  
Resolution Electron ◽  
Tilt Boundaries ◽  
Processing Techniques ◽  
Atom Position ◽  
Structure Configuration

The successful determination of the atomic structure of [110] tilt boundaries in Au stems from the investigation of microscope performance at intermediate accelerating voltages (200 and 400kV) as well as a detailed understanding of how grain boundary image features depend on dynamical diffraction processes variation with specimen and beam orientations. This success is also facilitated by improving image quality by digital image processing techniques to the point where a structure image is obtained and each atom position is represented by a resolved image feature. Figure 1 shows an example of a low angle (∼10°) Σ = 129/[110] tilt boundary in a ∼250Å Au film, taken under tilted beam brightfield imaging conditions, to illustrate the steps necessary to obtain the atomic structure configuration from the image. The original image of Fig. 1a shows the regular arrangement of strain-field images associated with the cores of ½ [10] primary dislocations which are separated by ∼15Å.

Atomic structure imaging of the Si/SiO2 interface with high-resolution electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 390-391
Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Medium Voltage ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Structural Image ◽  
Electron Microscopes ◽  
Point To Point

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.

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