scholarly journals Переключение поляризации вдоль подложки в тонких пленках Bi-=SUB=-4-=/SUB=-Ti-=SUB=-3-=/SUB=-O-=SUB=-12-=/SUB=- при различных деформационных напряжениях

2020 ◽  
Vol 90 (1) ◽  
pp. 128
Author(s):  
В.М. Мухортов ◽  
Д.В. Стрюков ◽  
С.В. Бирюков ◽  
Ю.И. Головко
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Domain Structure ◽  
Spontaneous Polarization ◽  
Unit Cell ◽  
Interface Plane ◽  
Dielectric Characteristics ◽  
Unit Cells ◽  
Mgo Substrate

A study of epitaxial Bi4Ti3O12 thin films with a pre-deposited 4 nm Ba0.4Sr0.6TiO3 sublay-er on (001) MgO substrates has been performed. In the obtained heterostructures, the rotation of the Bi4Ti3O12 film unit cells by an angle of 45° relative to the MgO substrate unit cell in the inter-face plane has been observed. The Bi4Ti3O12 films contain unit cell deformations depending on the thickness of the film and the sign of the deformation changes at a thickness of ~40 nm. The switchable in-plane spontaneous polarization of Bi4Ti3O12 film at the 180° domain structure oc-curs at a film thickness of 10 nm and increases with a thickness up to 54 µC/cm2. The study of the dielectric characteristics of the films confirmed the existence of properties anisotropy in the interface plane and the effect of deformation of the unit cell on the properties of heterostruc-tures.

Characterization of spray-pyrolized superconducting YBaCuO thin films on single-crystal MgO by transmission electron microscopy

1990 ◽  
Vol 5 (8) ◽  
pp. 1605-1611 ◽  
Author(s):  
S. J. Golden ◽  
H. Isotalo ◽  
M. Lanham ◽  
J. Mayer ◽  
F. F. Lange ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Single Crystal ◽  
Processing Parameters ◽  
Transmission Electron ◽  
Film Substrate ◽  
Mgo Substrate

Superconducting YBaCuO thin films have been fabricated on single-crystal MgO by the spray-pyrolysis of nitrate precursors. The effects on the superconductive behavior of processing parameters such as time and temperature of heat treatment and film thickness were investigated. The superconductive behavior was found to be strongly dependent on film thickness. Films of thickness 1 μm were found to have a Tc of 67 K while thinner films showed appreciably degraded properties. Transmission electron microscopy studies have shown that the heat treatments necessary for the formation of the superconductive phase (for example, 950 °C for 30 min) also cause a substantial degree of film-substrate interdiffusion. Diffusion distances for Cu in the MgO substrate and Mg in the film were found to be sufficient to explain the degradation of the superconductive behavior in films of thickness 0.5 μm and 0.2 μm. From the concentration profiles obtained by EDS analysis diffusion coefficients at 950 °C for Mg into the YBaCuO thin film and for Cu into the MgO substrate were evaluated as 3 × 10−19 m2/s and 1 × 10−17 m2/s, respectively.

Reactive RF magnetron sputtering epitaxy of NiO thin films on (0001) sapphire and (100) MgO substrates

2021 ◽  
Author(s):  
Keisuke Nishimoto ◽  
Kohei Shima ◽  
Shigefusa F. Chichibu ◽  
Mutsumi Sugiyama
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Sapphire Substrate ◽  
Rf Magnetron Sputtering ◽  
Optical Devices ◽  
Single Domain ◽  
Grain Structures ◽  
Reactive Rf Magnetron Sputtering ◽  
Mgo Substrate

Abstract Epitaxial growths of NiO thin films were realized on (0001) sapphire and (100) MgO substrates by using a reactive RF magnetron sputtering method. The NiO epilayers grown on a (0001) sapphire exhibited the (111)-oriented double-domain structure, which comprised of a triangular and its inverted triangular grains. Meanwhile, the NiO epilayers on a (100) MgO exhibited the (100)-oriented single-domain structure, which comprised of quadrangular grains. The observed grain structures most likely reflect the growth planes of respective NiO epilayers, and, mixed crystals of NiO and MgO were present near the interface. Therefore, A (100) MgO substrate is suitable for obtaining a single-domain NiO epilayer, whereas a (0001) sapphire substrate is suitable for obtaining a NiO epilayer without interdiffusion between NiO and sapphire. These NiO epilayers will be expected for applying the physical properties evaluation using photoluminescence or Hall measurements, and the fabrication of electrical or optical devices.

scholarly journals Strain And Symmetry-induced Structural Transitions in Ultra-thin BiFeO3 Films

2014 ◽  
Vol 70 (a1) ◽  
pp. C1610-C1610
Author(s):  
Christian Schlepuetz ◽  
Yongsoo Yang ◽  
Nancy Senabulya ◽  
Carolina Adamo ◽  
Christianne Beekman ◽  
...  
Keyword(s):  
Thin Films ◽  
Spontaneous Polarization ◽  
Bismuth Ferrite ◽  
Compressive Strain ◽  
Department Of Energy ◽  
Epitaxial Thin Films ◽  
Pixel Detector ◽  
Reciprocal Space Mapping ◽  
Out Of Plane ◽  
Unit Cells

As one of very few room temperature multiferroic materials, bismuth ferrite (BiFeO3: BFO) has been studied extensively in recent years. The bulk form of BFO is known to have a rhombohedrally distorted quasi-cubic perovskite structure with an (a–,a–,a–) octahedral tilt pattern, exhibiting both anti-ferrodistortive displacements and a spontaneous polarization along the <111> axes. Investigating epitaxial thin films under compressive strain, several studies have reported that the polarization direction is tilted towards the [001] out-of-plane direction, while maintaining a significant in-plane component. This effect is accompanied by a significant enhancement of the spontaneous polarization and a series of phase transitions from rhombohedral (R) for small strains to R-like monoclinic (MA) to T-like monoclinic (MC) and to tetragonal (T) for larger strains [1]. Through synchrotron-based 3-dimensional reciprocal space mapping (RSM), facilitated by using X-ray area detectors (Pilatus 100K pixel detector), we have investigated the structure of ultra-thin BFO films grown on SrTiO3 (STO), LaAlO3 (LAO), and TbScO3 (TSO) substrates with thicknesses of only several unit cells. In this thickness regime, the influence of the substrate atomic structure on the properties of the ultra-thin films is very pronounced, and the films exhibit perfect heteroepitaxy up to a critical thickness when the build up of strain energy forces the films into a relaxed structure. Both on STO [2] and LAO, the ultra-thin BFO undergoes a monoclinic to tetragonal phase transition, but with very different c/a axis ratios. On TSO, a very pronounced and well-ordered stripe domainstructure evolves where the domain sizes are strongly thickness- dependent. Argonne National Laboratory's work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under contract DE-AC02-06CH11357.

On the defect induced ferromagnetic ordering above room-temperature in undoped and Mn doped ZnO thin films

2009 ◽  
Vol 1183 ◽  
Author(s):  
Mukes Kapilashrami ◽  
Jun Xu ◽  
Valter Ström ◽  
K V Rao ◽  
Lyubov Belova
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Room Temperature ◽  
Unit Cell ◽  
Zno Thin Films ◽  
Intrinsic Defect ◽  
Magnetic Elements ◽  
Doped Zno ◽  
Ferromagnetic Ordering ◽  
Mn Doped

AbstractEvidence for long range ferromagnetic order above room-temperature, RTFM, in pristine ZnO, In2O3, TiO2 nanoparticles and thin films, containing no nominal magnetic elements have been reported recently. This could question the origin of RTFM in doped dilute alloys if for example the ZnO matrix itself develops a defect induced magnetic order with a significant moment per unit cell. In this presentation we report a systematic study of the film thickness dependence of RTFM in pure ZnO deposited by DC Magnetron Sputtering. We observe a maximum in the saturation magnetization, MS, value of 0.62 emu/g (0,018 μB/unit cell), for a ˜480 nm film deposited in an oxygen ambience of appropriate pressure. Above a thickness of around 1 μm the films are diamagnetic as expected. We thus see a sequential transition from ferromagnetism to para- and eventual diamagnetism as a function of film thickness in ZnO. We also find that in such a ZnO matrix with a maximum intrinsic defect induced moment, on doping with Mn the maximum enhanced MS value of 0.78 emu/g is obtained for 1at.% Mn doping. With this approach of appropriate doping in a defect tailored matrix, we routinely obtain RTFM in both undoped and Mn- doped ZnO thin films.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Domains and domain nucleation in magnetron-sputtered CoCr thin films

1993 ◽  
Vol 51 ◽  
pp. 1046-1047
Author(s):  
B. G. Demczyk
Keyword(s):  
Thin Films ◽  
Domain Structure ◽  
Magnetic Domain ◽  
Domain Size ◽  
Film Plane ◽  
Magnetic Domain Structure ◽  
Perpendicular Magnetization ◽  
Columnar Grains ◽  
Reversal Mechanism ◽  
Lorentz Transmission Electron Microscopy

CoCr thin films have been of interest for a number of years due to their strong perpendicular anisotropy, favoring magnetization normal to the film plane. The microstructure and magnetic properties of CoCr films prepared by both rf and magnetron sputtering have been examined in detail. By comparison, however, relatively few systematic studies of the magnetic domain structure and its relation to the observed film microstructure have been reported. In addition, questions still remain as to the operative magnetization reversal mechanism in different film thickness regimes. In this work, the magnetic domain structure in magnetron sputtered Co-22 at.%Cr thin films of known microstructure were examined by Lorentz transmission electron microscopy. Additionally, domain nucleation studies were undertaken via in-situ heating experiments.It was found that the 50 nm thick films, which are comprised of columnar grains, display a “dot” type domain configuration (Figure 1d), characteristic of a perpendicular magnetization. The domain size was found to be on the order of a few structural columns in diameter.

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

Bayesian removal of noise for increased sensitivity in vector pattern recognition lattice imaging of interfaces

1993 ◽  
Vol 51 ◽  
pp. 994-995
Author(s):  
L. Fei ◽  
P. Fraundorf
Keyword(s):  
Pattern Recognition ◽  
Perfect Crystal ◽  
Unit Cell ◽  
Ion Milling ◽  
Beam Radiation ◽  
Major Interest ◽  
Unit Cells ◽  
Mapping Process ◽  
Increased Sensitivity ◽  
Electron Microscopes

Interface structure is of major interest in microscopy. With high resolution transmission electron microscopes (TEMs) and scanning probe microscopes, it is possible to reveal structure of interfaces in unit cells, in some cases with atomic resolution. A. Ourmazd et al. proposed quantifying such observations by using vector pattern recognition to map chemical composition changes across the interface in TEM images with unit cell resolution. The sensitivity of the mapping process, however, is limited by the repeatability of unit cell images of perfect crystal, and hence by the amount of delocalized noise, e.g. due to ion milling or beam radiation damage. Bayesian removal of noise, based on statistical inference, can be used to reduce the amount of non-periodic noise in images after acquisition. The basic principle of Bayesian phase-model background subtraction, according to our previous study, is that the optimum (rms error minimizing strategy) Fourier phases of the noise can be obtained provided the amplitudes of the noise is given, while the noise amplitude can often be estimated from the image itself.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

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