Effect of Additive Gases on Dimension Control during Cl2-Based Polysilicon Gate Etching

Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified and the shift in oscillator frequency was measured. Finally, cross section images of the FIB created contacts were presented in the paper to illustrate the entire process.

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Unconventional Approach to Fabricating a TiO2 Nanoring with Precise Dimension Control Based on Starlike Polymeric Nanoreactors

The Journal of Physical Chemistry Letters ◽

10.1021/acs.jpclett.1c00491 ◽

2021 ◽

Vol 12 (13) ◽

pp. 3456-3463

Author(s):

Tianci Liang ◽

Yanan Wang ◽

Ge Shi ◽

Zhe Cui ◽

Peng Fu ◽

...

Keyword(s):

Dimension Control

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Spectroscopic ellipsometric scatterometry: sources of errors in critical dimension control

10.1117/12.485218 ◽

2003 ◽

Cited By ~ 6

Author(s):

Jerome Hazart ◽

Gilles Grand ◽

Philippe Thony ◽

David Herisson ◽

Stephanie Garcia ◽

...

Keyword(s):

Critical Dimension ◽

Dimension Control

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4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Materials ◽

10.3390/ma14133554 ◽

2021 ◽

Vol 14 (13) ◽

pp. 3554

Author(s):

Jaeyeop Na ◽

Jinhee Cheon ◽

Kwangsoo Kim

Keyword(s):

Dynamic Characteristics ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Switching Loss ◽

Switching Speed ◽

Polysilicon Gate ◽

Effect Transistor ◽

Switching Characteristics

In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

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Dimension control of in situ fabricated CsPbClBr2 nanocrystal films toward efficient blue light-emitting diodes

Nature Communications ◽

10.1038/s41467-020-20163-7 ◽

2020 ◽

Vol 11 (1) ◽

Author(s):

Chenhui Wang ◽

Dengbao Han ◽

Junhui Wang ◽

Yingguo Yang ◽

Xinyue Liu ◽

...

Keyword(s):

Quantum Well ◽

Light Emitting Diodes ◽

Blue Emission ◽

Light Emitting ◽

Mixed Ligands ◽

Dimension Control ◽

Nanocrystal Films ◽

Width Distribution ◽

Quantum Well Width

AbstractIn the field of perovskite light-emitting diodes (PeLEDs), the performance of blue emissive electroluminescence devices lags behind the other counterparts due to the lack of fabrication methodology. Herein, we demonstrate the in situ fabrication of CsPbClBr2 nanocrystal films by using mixed ligands of 2-phenylethanamine bromide (PEABr) and 3,3-diphenylpropylamine bromide (DPPABr). PEABr dominates the formation of quasi-two-dimensional perovskites with small-n domains, while DPPABr induces the formation of large-n domains. Strong blue emission at 470 nm with a photoluminescence quantum yield up to 60% was obtained by mixing the two ligands due to the formation of a narrower quantum-well width distribution. Based on such films, efficient blue PeLEDs with a maximum external quantum efficiency of 8.8% were achieved at 473 nm. Furthermore, we illustrate that the use of dual-ligand with respective tendency of forming small-n and large-n domains is a versatile strategy to achieve narrow quantum-well width distribution for photoluminescence enhancement.

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Capability of spectroscopic ellipsometry-based profile metrology for detecting the profile excursion of polysilicon gate

10.1117/12.536269 ◽

2004 ◽

Cited By ~ 1

Author(s):

Mike Yeh ◽

Shu-Ping Fang ◽

Bo-Jau Tsau ◽

Chih-Chung Huang ◽

Benjamin S. Lin ◽

...

Keyword(s):

Spectroscopic Ellipsometry ◽

Polysilicon Gate

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Investigation of the Role of Carbonylchemistry to Pattern Platinum Electrodes

MRS Proceedings ◽

10.1557/proc-688-c5.6.1 ◽

2001 ◽

Vol 688 ◽

Author(s):

St. Schneider ◽

H. Kohlstedt ◽

R. Waser

Keyword(s):

Carbon Monoxide ◽

Etch Rate ◽

Noble Metals ◽

Electrode Materials ◽

In Situ Monitoring ◽

Platinum Electrodes ◽

Process Chemistry ◽

Dimension Control ◽

Axis Position

AbstractNoble metals like platinum or irdium are used as electrode materials in DRAM or FRAM devices. Their etch process is a challenge as conventional, sputter driven etch processes either result in redeposition problems (fences) or in a severe sloping (loss of dimension control) and are not acceptable for high density integration architectures. The high temperature etch regime offers a solution by increasing the chemical etch component and thus the volatility of the etch products.As previously reported, the platinum etch rate increases exponentially for a chlorine etch process with increasing wafer temperature. In this study we investigate the particular role of carbon monoxide in a Cl2/CO etch process. We find that carbon monoxide additions to a chlorine process boost the chemical component of the platinum etch rate very significantly, exceeding the effects in the chlorine only process regime by far. Additionally we compare these results with a Cl2/O2 and a Cl2/CO2 process chemistry, which are not found to be particularly beneficial.To better understand the etch process we use an energy dispersive quadrupole mass spectrometer for in situ monitoring, attached to the chamber at two different locations. We are able to position the probe orifice at the place of the wafer electrode, to record ion energy and ion mass spectra of species impinging on the wafer plane. A second off axis position allows for etch product monitoring.

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