High Speed Metal–Oxide–Semiconductor Capacitor-Based Silicon Optical Modulators

2006 ◽  
Vol 45 (8B) ◽  
pp. 6603-6608 ◽  
Author(s):  
Ling Liao ◽  
Dean Samara-Rubio ◽  
Ansheng Liu ◽  
Doron Rubin ◽  
Ulrich D. Keil ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Optical Modulators ◽  
Metal Oxide Semiconductor Capacitor

A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

Nature ◽  
2004 ◽  
Vol 427 (6975) ◽  
pp. 615-618 ◽  
Author(s):  
Ansheng Liu ◽  
Richard Jones ◽  
Ling Liao ◽  
Dean Samara-Rubio ◽  
Doron Rubin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Optical Modulator ◽  
Metal Oxide Semiconductor Capacitor

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor

2019 ◽  
Vol 467-468 ◽  
pp. 1161-1169 ◽  
Author(s):  
Min Baik ◽  
Hang-Kyu Kang ◽  
Yu-Seon Kang ◽  
Kwang-Sik Jeong ◽  
Changmin Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Defect Generation ◽  
Electrical Stress ◽  
Metal Oxide Semiconductor Capacitor

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

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