Enhanced Memory Behavior in Phase-Change Nonvolatile-Memory Devices Using Multilayered Structure of Compositionally Modified Ge–Sb–Te Films
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2007 ◽
Vol 46
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pp. L99-L102
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2007 ◽
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pp. 316-320
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2009 ◽
Vol 53
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pp. 557-561
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2005 ◽
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2013 ◽
Vol 706-708
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