Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

Applied Surface Science ◽

10.1016/j.apsusc.2007.07.098 ◽

2007 ◽

Vol 254 (1) ◽

pp. 316-320 ◽

Author(s):

Sung-Min Yoon ◽

Kyu-Jeong Choi ◽

Nam-Yeal Lee ◽

Seung-Yun Lee ◽

Young-Sam Park ◽

...

Keyword(s):

Phase Change ◽

Nonvolatile Memory ◽

Memory Devices ◽

Change Type ◽

Nonvolatile Memory Devices ◽

Chalcogenide Thin Films ◽

Operational Failure

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Improvement of operational stability in SET states of phase-change-type nonvolatile memory devices using Sb-rich phase of Ge–Sb–Te alloys

Solid-State Electronics ◽

10.1016/j.sse.2009.02.004 ◽

2009 ◽

Vol 53 (5) ◽

pp. 557-561 ◽

Author(s):

Sung-Min Yoon ◽

Seung-Yun Lee ◽

Soon-Won Jung ◽

Young-Sam Park ◽

Byoung-Gon Yu

Keyword(s):

Phase Change ◽

Nonvolatile Memory ◽

Operational Stability ◽

Memory Devices ◽

Change Type ◽

Nonvolatile Memory Devices

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Electrical and Physical Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Oxygen Plasma Treatment for Nonvolatile Memory Devices Application

High-Performance Ceramics V - Key Engineering Materials ◽

10.4028/0-87849-473-1.75 ◽

2008 ◽

pp. 75-77

Author(s):

Kai Huang Chen ◽

Ying Chung Chen ◽

Wei Kuo Chia ◽

Zhi Sheng Chen ◽

Cheng Fu Yang ◽

...

Keyword(s):

Plasma Treatment ◽

Nonvolatile Memory ◽

Oxygen Plasma ◽

Physical Characteristics ◽

Oxygen Plasma Treatment ◽

Memory Devices ◽

Nonvolatile Memory Devices

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Unipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c169 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C169 ◽

Author(s):

Heonjun Ha ◽

Ohyun Kim

Keyword(s):

Nonvolatile Memory ◽

Memory Devices ◽

Styrene Sulfonate ◽

Nonvolatile Memory Devices ◽

Switching Characteristics ◽

Poly Styrene Sulfonate

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Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.l99 ◽

2007 ◽

Vol 46 (No. 4) ◽

pp. L99-L102 ◽

Author(s):

Sung-Min Yoon ◽

Kyu-Jeong Choi ◽

Nam-Yeal Lee ◽

Seung-Yun Lee ◽

Young-Sam Park ◽

...

Keyword(s):

Phase Change ◽

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices

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Electrical Characteristics of Bi4Ti3O12 Ferroelectric Thin Films Annealed under Different Temperature for Applications in Nonvolatile Memory Devices

Ferroelectrics ◽

10.1080/00150190902888632 ◽

2009 ◽

Vol 385 (1) ◽

pp. 646-653 ◽

Author(s):

Kai-Huang Chen ◽

Chien-Chen Diao ◽

Cheng-Fu Yang ◽

Bing-Xun Wang

Keyword(s):

Nonvolatile Memory ◽

Ferroelectric Thin Films ◽

Memory Devices ◽

Electrical Characteristics ◽

Nonvolatile Memory Devices

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Set Power Dependency on the Resistive Switching in Cr-doped SrZrO3 Thin Films for Nonvolatile Memory Devices

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics ◽

10.1109/isaf.2007.4393163 ◽

2007 ◽

Author(s):

Jae-Wan Park ◽

Kyooho Jung ◽

Min Kyu Yang ◽

Jong-Wan Park ◽

Jeon-Kook Lee

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Memory Devices ◽

Nonvolatile Memory Devices

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(Invited) ALD of Phase Change and Threshold Switching Materials for Next-Generation Nonvolatile Memory Devices

ECS Meeting Abstracts ◽

10.1149/ma2020-02231684mtgabs ◽

2020 ◽

Vol MA2020-02 (23) ◽

pp. 1684-1684

Author(s):

Valerio Adinolfi ◽

Ryan Clarke ◽

Mario Laudato ◽

Scott Jewhurst ◽

Martin McBriarty ◽

...

Keyword(s):

Phase Change ◽

Nonvolatile Memory ◽

Memory Devices ◽

Next Generation ◽

Threshold Switching ◽

Nonvolatile Memory Devices

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Flexible Inorganic Ferroelectric Thin Films for Nonvolatile Memory Devices

Advanced Functional Materials ◽

10.1002/adfm.201700461 ◽

2017 ◽

Vol 27 (21) ◽

pp. 1700461 ◽

Author(s):

Hyeonggeun Yu ◽

Ching-Chang Chung ◽

Nate Shewmon ◽

Szuheng Ho ◽

Joshua H. Carpenter ◽

...

Keyword(s):

Nonvolatile Memory ◽

Ferroelectric Thin Films ◽

Memory Devices ◽

Nonvolatile Memory Devices

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Preparation of ferroelectric YMnO3 thin films for nonvolatile memory devices by metalorganic chemical vapor deposition

Integrated Ferroelectrics ◽

10.1080/10584589808202073 ◽

1998 ◽

Vol 21 (1-4) ◽

pp. 319-329 ◽

Author(s):

Woong-Chul Shin ◽

Kyu-Jeong Choi ◽

Cheol-Hoon Yang ◽

Jong-Bong Park ◽

Soon-Gil Yoon

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Nonvolatile Memory ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Memory Devices ◽

Nonvolatile Memory Devices ◽

Metalorganic Chemical

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Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

Physical Chemistry Chemical Physics ◽

10.1039/c5cp05481h ◽

2015 ◽

Vol 17 (44) ◽

pp. 29978-29984 ◽

Author(s):

Yanmei Sun ◽

Fengjuan Miao ◽

Rui Li ◽

Dianzhong Wen

Keyword(s):

Resistive Switching ◽

Nonvolatile Memory ◽

Electrical Conductance ◽

Memory Devices ◽

Resistive Switching Memory ◽

Nonvolatile Memory Devices ◽

Vinyl Phenol ◽

Switching Memory

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated.

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