Carrier Compensation by Excess Oxygen Atoms in Anatase Ti0.94Nb0.06O2+δEpitaxial Thin Films

2010 ◽  
Vol 49 (4) ◽  
pp. 041102 ◽  
Author(s):  
Hiroyuki Nogawa ◽  
Taro Hitosugi ◽  
Akira Chikamatsu ◽  
Shoichiro Nakao ◽  
Yasushi Hirose ◽  
...  
Keyword(s):  
Thin Films ◽  
Excess Oxygen ◽  
Oxygen Atoms

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Etching of polyethylene terephthalate thin films by neutral oxygen atoms in the late flowing afterglow of oxygen plasma

2012 ◽  
Vol 44 (13) ◽  
pp. 1565-1571 ◽  
Author(s):  
Alenka Vesel ◽  
Metod Kolar ◽  
Ales Doliska ◽  
Karin Stana-Kleinschek ◽  
Miran Mozetic
Keyword(s):  
Thin Films ◽  
Polyethylene Terephthalate ◽  
Oxygen Plasma ◽  
Flowing Afterglow ◽  
Oxygen Atoms

Microstructure and optical properties of AlOx thin films grown on ZnO-deposited glass

2003 ◽  
Vol 18 (8) ◽  
pp. 1943-1949 ◽  
Author(s):  
Su-Shia Lin ◽  
Jow-Lay Huang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Film Growth ◽  
Processing Parameters ◽  
High Rate ◽  
Excess Oxygen ◽  
Glass Substrates ◽  
Oxygen Oxygen ◽  
High Kinetic Energy ◽  
Polycrystalline Structures

AlOx thin films were grown on ZnO-deposited glass substrates under different conditions using magnetron sputtering. The influence of processing parameters (mainly direct-current power and oxidizing atmosphere) on the structure and optical properties were investigated. The AlOx films for all samples in this study showed the coexistence of amorphous and polycrystalline structures. The kinetics of crystal growth could influence the dominant crystal orientation. Fast-growing planes were not the most thermodynamically stable, but were kinetically controlled under the film growth condition. Oxidizing the sample in O2 atmosphere made the AlOx film grow in random directions. The excess oxygen was chemisorbed at the interface between AlOx and ZnO. Therefore, the neighboring oxygen–oxygen distance of AlOx and that of ZnO on their closest-packed planes seriously mismatched. At high power, the particles arrived at the substrate with high kinetic energy and high rate, which led to low density due to porous structure. The transmission decreased with an increase of the pores and surface roughness of AlOxfilm on ZnO-deposited glass. However, the diffusion of oxygen into the grains improved transmission when the sample was oxidized in O2 atmosphere.

Electrical and Physical Properties of (K0.5Na0.5)NbO3 Ferroelectric Thin Films

2014 ◽  
Vol 602-603 ◽  
pp. 800-803
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Physical Properties ◽  
Leakage Current ◽  
Oxygen Concentration ◽  
Leakage Current Density ◽  
Current Density ◽  
Root Mean Square Roughness ◽  
Excess Oxygen ◽  
Average Grain Size

Lead-free potassium sodium niobate ceramic thin films were synthesized using rf magnetron sputtering technology for MFIS structures. The optimal sputtering parameters of the as-deposited KNN thin films for depositing times of 1h were obtained. Regarding the measured physical properties, the micro-structure and thickness of as-deposited KNN thin films for different oxygen concentration were obtained and compared by XRD patterns and SEM images. The surface roughness of KNN thin film was also observed by AFM morphology. The average grain size and root mean square roughness were 250 and 7.04 nm, respectively. For KNN thin films in the MFIS structure, the capacitance and leakage current density were 280 pF and 10-8A/cm2, respectively. We investigated that the leakage current density and the memory window increased, the capacitance critically increased as the oxygen concentration increased from 0 to 40%. However, the excess oxygen concentration process was decreased the electrical and physical of as-deposited KNN thin film. The effect of oxygen concentration on the physical and electrical characteristics of KNN thin films was investigated and determined.

Location of excess oxygen atoms in HgBa2CaCu2O6+δ

1996 ◽  
Vol 262 (1-2) ◽  
pp. 13-20 ◽  
Author(s):  
X. Zhang ◽  
S.Y. Xu ◽  
C.K. Ong
Keyword(s):  
Excess Oxygen ◽  
Oxygen Atoms

New One-Dimensional Commensurate and Incommensurate Structural Forms of Sr-Co Oxide

1996 ◽  
Vol 453 ◽  
Author(s):  
R. Christoffersen ◽  
A. J. Jacobson ◽  
S. L. Hegwood ◽  
L. Liu
Keyword(s):  
Mixed Layer ◽  
Excess Oxygen ◽  
Slow Cooling ◽  
One Dimensional ◽  
Vacancy Ordering ◽  
Structural Modulation ◽  
Hexagonal Perovskites ◽  
Trigonal Prismatic ◽  
Oxygen Atoms

AbstractNew forms of Sr-Co oxide with one-dimensional structures related to mixed-layer hexagonal perovskites have been synthesized and characterized by TEM. Crystals of Sr5Co2O12 grown from molten KOH flux and oxidized under slow cooling have structures based on a 3/2 ratio of mixed [Sr3CoO6] and [Sr3O9] layers. This is the first known structure with layers of this type stacked in a non-integer ratio, yielding chains of face-sharing octahedral and trigonal prismatic Co-sites with a 3 + 1 sequence along the c-axis. In oxygen-deficient Sr5Co2O12−x, the {110} structural modulation of the stoichiometric 5:4 phase becomes rotated to an irrational orientation, possibly in association with vacancy ordering, forming an incommensurate superstructure. For the compound Sr6Co5O15, previously known to have a 1/1 ratio of [Sr3CoO6] and [Sr3O9] layers with a 4 + 1 octahedral/trigonal prismatic site sequence, introduction of excess oxygen atoms leads to formation of a commensurate rhombohedral superlattice in which c is doubled relative to the stoichiometric 6:5 phase.

A Channeling Study of the Structure of U4O9

1971 ◽  
Vol 49 (17) ◽  
pp. 2215-2226 ◽  
Author(s):  
Hj. Matzke ◽  
J. A. Davies ◽  
N. G. E. Johansson
Keyword(s):  
Critical Angle ◽  
Fluorite Structure ◽  
Recent Model ◽  
The Other ◽  
Excess Oxygen ◽  
Wide Angle ◽  
Oxygen Sublattice ◽  
Other Hand ◽  
Rutherford Scattering ◽  
Oxygen Atoms

The channeling behavior of 1-MeV He+ ions and deuterons in U4O9 has been studied in order to provide information on the location of the excess oxygen in the fluorite structure of UO2. Wide-angle (Rutherford) scattering was used to study the channeling behavior with respect to the uranium sublattice, and the 16O(d, p)17O reaction was used to investigate the oxygen sublattice. A pronounced disorder in the oxygen sublattice was indicated by very poor channeling properties and strong dechanneling with increasing depth. The data are thus in conflict with the model incorporating the excess oxygen in the regular interstitial positions along the [Formula: see text] uranium rows; on the other hand, they are consistent with the more recent model of Willis in which the excess oxygen atoms are displaced ~ 1 Å from the regular interstitial sites and displace, in addition, some normal oxygen atoms. Channeling with respect to the uranium sublattice was found to be substantially the same as in stoichiometric UO2—but with a somewhat smaller critical angle, indicating that the uranium atoms may be displaced slightly (i.e. ~ 0.25 Å) by the presence of the excess oxygen.

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