Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C

2010 ◽  
Vol 49 (4) ◽  
pp. 04DF11 ◽  
Author(s):  
Cheng-Yu Hu ◽  
Hiroyuki Nokubo ◽  
Masanari Okada ◽  
Jin-Ping Ao ◽  
Yasuo Ohno
Keyword(s):  
Semiconductor Diode ◽  
Voltage Measurement ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage

Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator- Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 9A) ◽  
pp. L1200-L1202 ◽  
Author(s):  
Kunio Ichino ◽  
Toshikazu Onishi ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Semiconductor Diode ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

A New Method For The Electronic And Chemical Passivation Of GaAs Surfaces Using CS2

1995 ◽  
Vol 406 ◽  
Author(s):  
Ju-Hyung Lee ◽  
Yanzhen Xu ◽  
Veronica A. Burrows ◽  
Paul F. McMillan
Keyword(s):  
Surface Passivation ◽  
Passivation Layer ◽  
Semiconductor Diode ◽  
Photoluminescence Intensity ◽  
Atmospheric Conditions ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Capacitance Voltage ◽  
Chemical Passivation ◽  
Homogeneous Film

AbstractA new GaAs surface passivation method, CS2 treatment at moderate temperature was developed for effective passivation of GaAs surfaces. The CS2 treatment of GaAs surfaces at 350°C and 10 atm leads to deposition of a homogeneous film, with a thickness of several hundred Å. The passivation layer thus produced causes a significant enhancement in room temperature photoluminescence intensity and the passivation effect of the sulfide film was confirmed by Raman spectroscopy. The passivation layer remained electrically and chemically stable over a period of nine months under ambient atmospheric conditions. In-depth Auger electron spectroscopy (AES) revealed that the carbon and oxygen content in the film was negligible, whereas sulfur was uniformly distributed throughout the film. A metal-insulator-semiconductor diode whose insulating layer is produced by the CS2 treatment shows well-defined accumulation and depletion regions in its capacitance-voltage (CV) characteristics with low hysteresis.

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type

scholarly journals Investigation of metal-insulator-semiconductor diode with alpha-Ga2O3 insulating layer by liquid phase deposition

2019 ◽  
Vol 685 ◽  
pp. 414-419 ◽  
Author(s):  
Yi-Shu Hsieh ◽  
Chien-Yu Li ◽  
Chang-Min Lin ◽  
Na-Fu Wang ◽  
Jian V. Li ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Semiconductor Diode ◽  
Liquid Phase Deposition ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Metal Insulator Semiconductor

Effects of Interface Nitride Layer on Electrical Characteristics of SiO2/Nitride/SiC Metal–Insulator–Semiconductor Diode

2011 ◽  
Vol 50 (1S2) ◽  
pp. 01BG02 ◽  
Author(s):  
Tomohiko Yamakami ◽  
Shinichiro Suzuki ◽  
Mitsunori Henmi ◽  
Yusuke Murata ◽  
Rinpei Hayashibe ◽  
...  
Keyword(s):  
Nitride Layer ◽  
Semiconductor Diode ◽  
Electrical Characteristics ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
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