Improvement of Surface Morphology of Aluminum Thin Films Grown by Metallorganic Chemical Vapor Deposition

1999 ◽  
Vol 3 (4) ◽  
pp. 186 ◽  
Author(s):  
Seong-Deok Ahn
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor

Properties of I-Doped CuI Thin Films by Chemical Vapor Deposition (CVD)

2013 ◽  
Vol 832 ◽  
pp. 439-443 ◽  
Author(s):  
Nur Amalina Muhamad ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Current ◽  
Constant Voltage ◽  
Iodine Doping ◽  
Particle Structure ◽  
Cvd Method

In this paper, we present the properties of I-doped CuI thin films at different concentration of iodine dopant (e.g. 10mg, 20mg, 30mg, 40mg and 100mg). The doping of CuI was done by using double furnace chemical vapor deposition (CVD) method. The effects of I-doped CuI to its surface morphology and electrical were studied. The effect of iodine doping to surface morphology was measured by field emission scanning electron microscopy (FESEM). The morphology of all thin films shows insignificance changes in grain size, grain boundaries and particle structure as the doping concentration varies. For the electrical properties, high current at constant voltage of-5V to 5V was obtained. The resistivity of 10-1 was obtained for undoped CuI thin films. While, for the series of I-doped CuI thin films, the resistivity of 10-2 was obtained. The excess of hole conductor in the I-doped CuI thin films enhances the electrical conductivity of the films.

Proton Conductive Strontium Cerate Thin Films Processed Using Flame-Assisted Chemical Vapor Deposition

2006 ◽  
Author(s):  
Zhigang Xu ◽  
Gregory Young ◽  
Gukan Rajaram ◽  
Jag Sankar
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fluorite Phase ◽  
Strontium Cerate ◽  
Intermediate Concentration

Thin films of SrCe0.95Y0.05O3 have been successfully prepared on Si(100) substrates using flame-assisted chemical vapor deposition. XRD characterization shows the inclusion of fluorite phase of CeO2 in the perovskite phases, which may be caused by strontium depletion during deposition. The effects of total-metal concentration in the solution and substrate temperature on the surface morphology and think thickness growth of the coatings have been explored. It was found that both the intermediate concentration and temperature produces smoothest films and increasing the concentration had more significant effect on enhancement of the film thickness growth.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

Sign in / Sign up

Export Citation Format

Share Document