scholarly journals Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga2O3 thin films fabricated by mist chemical vapor deposition

2018 ◽  
Vol 126 (11) ◽  
pp. 925-930 ◽  
Author(s):  
Yuji NAKABAYASHI ◽  
Satoru YAMADA ◽  
Satoshi ITOH ◽  
Takeshi KAWAE
2013 ◽  
Vol 832 ◽  
pp. 439-443 ◽  
Author(s):  
Nur Amalina Muhamad ◽  
Mohamad Rusop

In this paper, we present the properties of I-doped CuI thin films at different concentration of iodine dopant (e.g. 10mg, 20mg, 30mg, 40mg and 100mg). The doping of CuI was done by using double furnace chemical vapor deposition (CVD) method. The effects of I-doped CuI to its surface morphology and electrical were studied. The effect of iodine doping to surface morphology was measured by field emission scanning electron microscopy (FESEM). The morphology of all thin films shows insignificance changes in grain size, grain boundaries and particle structure as the doping concentration varies. For the electrical properties, high current at constant voltage of-5V to 5V was obtained. The resistivity of 10-1 was obtained for undoped CuI thin films. While, for the series of I-doped CuI thin films, the resistivity of 10-2 was obtained. The excess of hole conductor in the I-doped CuI thin films enhances the electrical conductivity of the films.


Author(s):  
Zhigang Xu ◽  
Gregory Young ◽  
Gukan Rajaram ◽  
Jag Sankar

Thin films of SrCe0.95Y0.05O3 have been successfully prepared on Si(100) substrates using flame-assisted chemical vapor deposition. XRD characterization shows the inclusion of fluorite phase of CeO2 in the perovskite phases, which may be caused by strontium depletion during deposition. The effects of total-metal concentration in the solution and substrate temperature on the surface morphology and think thickness growth of the coatings have been explored. It was found that both the intermediate concentration and temperature produces smoothest films and increasing the concentration had more significant effect on enhancement of the film thickness growth.


1994 ◽  
Vol 9 (6) ◽  
pp. 1474-1483 ◽  
Author(s):  
Woo Y. Lee ◽  
Theodore M. Besmann ◽  
Michael W. Stott

The chemical vapor deposition (CVD) of MoS2 by reaction of H2S with molybdenum halides was determined to be thermodynamically favored over a wide range of temperature, pressure, and precursor concentration conditions as long as excess H2S was available. The thermochemical stability of H2S, MoF6, and MoCI5 was also assessed to address their suitability as precursors for the CVD of MoS2. The results from the thermodynamic analysis were used as guidance in the deposition of MoS2 thin films from MoF6 and H2S. The (002) basal planes of MoS2 films deposited above 700 K were preferentially oriented perpendicular to the substrate surface.


2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  

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