Surface and Interface Roughness of Ultrathin Nitric Oxide Oxynitride Gate Dielectric

1998 ◽  
Vol 145 (1) ◽  
pp. L13-L15 ◽  
Author(s):  
Rama I. Hegde ◽  
Bikas Maiti ◽  
Raghaw S. Rai ◽  
Kimberly G. Reid ◽  
Philip J. Tobin
Keyword(s):  
Nitric Oxide ◽  
Gate Dielectric ◽  
Interface Roughness ◽  
Surface And Interface

ChemInform Abstract: Surface and Interface Roughness of Ultrathin Nitric Oxide Oxynitride Gate Dielectric.

ChemInform ◽  
2010 ◽  
Vol 29 (15) ◽  
pp. no-no
Author(s):  
R. I. HEGDE ◽  
B. MAITI ◽  
R. S. RAI ◽  
K. G. REID ◽  
P. J. TOBIN
Keyword(s):  
Nitric Oxide ◽  
Gate Dielectric ◽  
Interface Roughness ◽  
Surface And Interface

FDTD Simulation of Light Propagation Inside a-Si:H Structures

2010 ◽  
Vol 1245 ◽  
Author(s):  
Alessandro Fantoni ◽  
Pedro Pinho
Keyword(s):  
Light Absorption ◽  
Electromagnetic Waves ◽  
Light Propagation ◽  
Light Transmission ◽  
Visible Spectrum ◽  
Propagation Model ◽  
Interface Roughness ◽  
Fdtd Simulation ◽  
Doping Density ◽  
Surface And Interface

AbstractWe have developed a computer program based on the Finite Difference Time Domain (FDTD) algorithm able to simulate the propagation of electromagnetic waves with wavelengths in the range of the visible spectrum within a-Si:H p-i-n structures. Understanding of light transmission, reflection and propagation inside semiconductor structures is crucial for development of photovoltaic devices. Permitting 1D analysis of light propagation over time evolution, our software produces results in well agreement with experimental values of the absorption coefficient. It shows the light absorption process together with light reflection effects at the incident surface as well as at the semiconductor interfaces. While the effects of surface reflections are easily taken into account by the algorithm, light absorption represents a more critical point, because of its non-linear dependence from conductivity. Doping density, density of states and photoconductivity calculation are therefore crucial parameters for a correct description of the light absorption-transmission phenomena through a light propagation model.The results presented in this paper demonstrate that is possible to describe the effect of the light-semiconductor interaction through the application of the FDTD model to a a-Si:H solar cell. A more general application of the model to 2D geometries will permit the analysis of the influence of surface and interface roughness on the device photovoltaic efficiency.

Thermal Degradation of SiGe Interfaces Studied by X-Ray Reflectivity and Diffraction

1991 ◽  
Vol 239 ◽  
Author(s):  
J. M. Hudson ◽  
A. R. Powell ◽  
D. K. Bowen ◽  
M. Wormington ◽  
B. K. Tanner ◽  
...  
Keyword(s):  
Short Range ◽  
Grazing Incidence ◽  
Sige Layer ◽  
Interface Roughness ◽  
Total Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface And Interface ◽  
Superlattice Structures

ABSTRACTWe demonstrate the use of x-ray diffraction to provide accurate compositional information, together with grazing incidence reflectivity to provide information on layer thicknesses and surface and interface roughnesses, on Si/Si1-xGex superlattice structures of less than 200nm total thickness.The quality of SiGe interfaces has been investigated in superlattices where x varies from 0.1 to 0.5. At low Ge compositions the interfaces are shown to be smooth to a few angstroms. However, as the Ge composition in the SiGe layer approaches 50%, severe roughness is observed at the SiGe to Si interfaces, although the Si to SiGe interfaces remain relatively smooth.Upon annealing for one hour at 850°C the Ge diffuses outwards from the SiGe layers and can be closely modelled by inclusion of a (2.4±0.3)nm linearly graded layer either side of the SiGe layer into a simulation program. The long range roughness at the SiGe to Si interface is lost upon annealing leaving only a short range roughness of similar size to the Si to SiGe interface roughness.Reflectivity measurements have been shown to distinguish between interface roughness and interdiffusion for the annealed system.

A New Parameter Predicating Gm for Ultra Thin Nitrided Gate Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
Mitsuaki Hori ◽  
Naoyoshi Tamura ◽  
Masataka Kase ◽  
Hiroko Sakuma ◽  
Hiroyuki Ohota ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Oxide ◽  
Cmos Technology ◽  
X Ray ◽  
Plasma Nitridation ◽  
Secondary Ions ◽  
Physical Thickness

AbstractWe propose a new parameter predicating transconductance (Gm) of the gate dielectric of nitrided SiO2 with the physical thickness below 1.1 nm for high-performance transistors. The 6 different type of nitrided SiO2 are formed using the plasma nitridation or nitric oxide (NO) gas annealing in conditions to adjust a optical thickness ranging 0.96 to 1.19 nm. The material property of nitrided SiO2 are analyzed by secondary ions mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS). The MOSFET are fabricated using these gate dielectric and 90 nm generation CMOS technology. Then we find a good correlation between the maximum of Gm and the percentage of amount of N(SiN3)3 substructure at the total amount of NSi3 structure measured by XPS, rather than the total dose of nitrogen measured by SIMS.

Ultrathin TiO2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient

1999 ◽  
Vol 567 ◽  
Author(s):  
H. F. Luan ◽  
A. Y. Mao ◽  
S. J. Lee ◽  
T. Y. Luo ◽  
D. L. Kwong
Keyword(s):  
Nitric Oxide ◽  
Leakage Current ◽  
Gate Dielectric ◽  
Passivation Layer ◽  
No Oxidation ◽  
Oxidation Temperature ◽  
High Quality ◽  
Si Substrates ◽  
High Oxidation

ABSTRACTWe have fabricated very thin TiO2 film (Teq∼20Å) by RTP oxidation of sputtered Ti in NO ambient on nitrogen passivated Si substrates. The leakage current is about two orders magnitude lower than SiO2 of identical Teq. Results show that NO passivation layer prior to sputtering is critical in reducing the leakage current. XPS results show that the temperature RTP NO oxidation of sputtered Ti is very important for achieving high quality TiO2 films. high oxidation temperature an SiO2 layer is formed at the interface between TiO2 and Si and the leakage current is approaching to that of SiO2.

Grazing Incidence X-Ray Reflectance Measurement of Surface and Interface Roughness on the Sub-Nanometre Scale

1994 ◽  
Vol 332 ◽  
Author(s):  
M. Wormington ◽  
K. Sakurai ◽  
D.K. Bowen ◽  
B.K. Tanner
Keyword(s):  
Grazing Incidence ◽  
Interface Roughness ◽  
Reflectance Measurement ◽  
Correlation Lengths ◽  
X Ray ◽  
Surface And Interface ◽  
Atomic Force ◽  
Fractal Representation ◽  
Non Destructive ◽  
Ray Methods

ABSTRACTGrazing incidence X-ray reflectivity may be used to measure surface topography including roughness and correlation lengths to sub-nanometre precision. A study is made of a technically important surface, a carefully-polished specimen of Zerodur glass-ceramic, which has been measured by diffuse scatter of CuKα X-radiation and atomic-force profilometry methods. The data have been analysed in terms of a fractal representation of the surface correlation function. Results from the two methods agreed within their estimated errors, with the X-ray data showing roughnesses of 1.3 nm, correlation length of 1 μm and fractal parameter (bandwidth) of 0.35. The X-ray methods have a lower cut-off length, are much more rapid for averaged information and are both non-contacting and non-destructive. They also show potential for the study of interface roughness in thin films.

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