Improvement in NBTI of Metal Gate pMOSFETs with Sub-1nm EOT HfSiON Gate Dielectric by Ar/N2/H2(D2) Plasma Nitridation

ABSTRACTIn this paper we propose a new metal-gate CMOS technology that uses a combination of two metals to achieve a low threshold voltage for both n- and p-MOSFET's. One of the gate electrodes is formed by metal interdiffusion so that no metal has to be etched away from the gate dielectric surface. Consequently, this process does not compromise the integrity and electrical reliability of the gate dielectric. This new technology is demonstrated for the Ti-Ni metal combination that produces gate electrodes with 3.9 eV and 5.3 eV work functions for n-MOS and p-MOS devices respectively.

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Plasma Nitridation of HfO2 Gate Dielectric on p-GaAs Substrates

ECS Transactions ◽

10.1149/1.2981620 ◽

2019 ◽

Vol 16 (5) ◽

pp. 387-392 ◽

Cited By ~ 11

Author(s):

G K. Dalapati ◽

Aditya Sridhara ◽

Andrew S. Wong ◽

C Chia ◽

Dongzhi Chi

Keyword(s):

Gate Dielectric ◽

Plasma Nitridation ◽

Gaas Substrates

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Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation

Applied Physics Letters ◽

10.1063/1.1379363 ◽

2001 ◽

Vol 78 (24) ◽

pp. 3875-3877 ◽

Cited By ~ 15

Author(s):

H. N. Al-Shareef ◽

A. Karamcheti ◽

T. Y. Luo ◽

G. Bersuker ◽

G. A. Brown ◽

...

Keyword(s):

Gate Dielectric ◽

Device Performance ◽

Remote Plasma ◽

Plasma Nitridation

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Chemical Stability of Advanced Metal Gate and Ultra-thin Gate Dielectric Interface During Rapid Thermal Annealing

MRS Proceedings ◽

10.1557/proc-525-219 ◽

1998 ◽

Vol 525 ◽

Cited By ~ 1

Author(s):

B. Claflin ◽

M. Binger ◽

G. Lucovsky

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Chemical Stability ◽

Electron Spectroscopy ◽

Auger Electron ◽

Elevated Temperatures ◽

Gate Dielectric ◽

Metal Gate ◽

Dielectric Interface ◽

On Line

ABSTRACTThe chemical stability of the compound metals TiNx and WNx on SiO2 and SiO2/Si3N4 (ON) dielectric stacks is studied by on-line Auger electron spectroscopy (AES) following sequential rapid thermal annealing treatments of 15 - 180 s up to 850 °C. The TiNx/SiO2 interface reacts at 850 °C and the reaction is kinetics driven. The TiNx/Si3N4 interface is more stable than TiNx/SiO2 even after a 180 s anneal at 850 °C. WNx is stable below 650 °C both on SiO2 and Si3N4, but above this temperature the film changes, possibly due to crystallization or interdiffusion. The changes in the WNx film are not controlled by kinetics. The compound metals are chemically more stable at elevated temperatures than pure Ti or W on SiO2.

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