The Dielectric Breakdown in Gate Oxides under High Field Stress

ECS Transactions ◽

10.1149/1.3122092 ◽

2019 ◽

Vol 19 (2) ◽

pp. 177-194 ◽

Author(s):

Salvatore A. Lombardo ◽

James H. Stathis ◽

Gennadi Bersuker

Keyword(s):

Dielectric Breakdown ◽

Gate Oxides ◽

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High field conduction and dielectric breakdown in nominally pure and nickel-doped MgO crystals at high temperatures

Physical Review B ◽

10.1103/physrevb.26.6909 ◽

1982 ◽

Vol 26 (12) ◽

pp. 6909-6917 ◽

Author(s):

K. L. Tsang ◽

Y. Chen ◽

J. J. O'Dwyer

Keyword(s):

High Temperatures ◽

Dielectric Breakdown

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Defect‐related dielectric breakdown, charge trapping, and interface‐state generation of gate oxides grown on zone‐melting‐recrystallized silicon‐on‐insulator films

Journal of Applied Physics ◽

10.1063/1.343098 ◽

1989 ◽

Vol 65 (2) ◽

pp. 646-650 ◽

Author(s):

Chun‐Teh Lee ◽

Chenson K. Chen

Keyword(s):

Dielectric Breakdown ◽

Charge Trapping ◽

Interface State ◽

Zone Melting ◽

Silicon On Insulator ◽

Gate Oxides ◽

State Generation

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Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides

Solid-State Electronics ◽

10.1016/s0038-1101(00)00262-8 ◽

2001 ◽

Vol 45 (8) ◽

pp. 1327-1332 ◽

Author(s):

E Miranda ◽

J Suñé ◽

R Rodrı́guez ◽

M Nafrı́a ◽

X Aymerich

Keyword(s):

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Oxide wearout phenomena of ultrathin SiO2 film during high-field stress

Electronics Letters ◽

10.1049/el:19920963 ◽

1992 ◽

Vol 28 (16) ◽

pp. 1516 ◽

Author(s):

H. Fukuda ◽

M. Yasuda ◽

T. Iwabuchi

Keyword(s):

Sio2 Film ◽

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Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs

Acta Physica Sinica ◽

10.7498/aps.58.511 ◽

2009 ◽

Vol 58 (1) ◽

pp. 511

Author(s):

Gu Wen-Ping ◽

Hao Yue ◽

Zhang Jin-Cheng ◽

Wang Chong ◽

Feng Qian ◽

...

Keyword(s):

Field Stress ◽

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High field stress induced leakage current in 3.0-nm NO-grown gate dielectric films

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings ◽

10.1109/tencon.1995.496391 ◽

2002 ◽

Author(s):

Ze-Qiang Yao ◽

H.B. Harrison ◽

S. Dimitrijev ◽

Y.T. Yeow

Keyword(s):

Leakage Current ◽

Gate Dielectric ◽

Dielectric Films ◽

Field Stress ◽

Stress Induced Leakage Current

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A method of eliminating B-mode dielectric breakdown failure in gate oxides utilizing a charging phenomenon

IEEE Transactions on Electron Devices ◽

10.1109/16.249476 ◽

1993 ◽

Vol 40 (12) ◽

pp. 2282-2286 ◽

Author(s):

T. Ajioka ◽

A. Nara ◽

Y. Tominaga ◽

T. Ushikoshi ◽

H. Kitabayashi

Keyword(s):

Dielectric Breakdown ◽

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Detection of traps induced and activated by high field stress in an N-channel VDMOSFET transistor using current deep level transient spectroscopy (CDLTS)

Microelectronic Engineering ◽

10.1016/j.mee.2011.08.008 ◽

2011 ◽

Vol 88 (11) ◽

pp. 3333-3337 ◽

Author(s):

N. Abboud ◽

Y. Cuminal ◽

A. Foucaran ◽

C. Salame

Keyword(s):

Deep Level Transient Spectroscopy ◽

Field Stress ◽

Transient Spectroscopy

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Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress

Journal of Applied Physics ◽

10.1063/1.1364654 ◽

2001 ◽

Vol 89 (10) ◽

pp. 5497-5501 ◽

Author(s):

Chia-Hong Huang ◽

Jenn-Gwo Hwu

Keyword(s):

Low Voltage ◽

Tunneling Current ◽

Field Stress ◽

Current Characteristics

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A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1826213 ◽

2005 ◽

Vol 97 (1) ◽

pp. 014503 ◽

Author(s):

Mun-Soo Park ◽

Inmook Na ◽

Chu R. Wie

Keyword(s):

Ionizing Radiation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Power ◽

Field Stress ◽

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